Junction field effect transistor and preparation method thereof

Abstract

The invention discloses a junction field effect transistor and a preparation method thereof. The junction field effect transistor comprises a substrate, an N-type tungsten disulfide film, a P-type InGeTe3 film, a source electrode, a drain electrode and a top gate electrode, the N-type tungsten disulfide film is arranged on the surface of the substrate, the source electrode and the drain electrodeare arranged at the two ends of the surface of the N-type tungsten disulfide film, and the P-type InGeTe3 film is arranged on the surface of the N-type tungsten disulfide film; and the top gate electrode is arranged on the surface of the P-type InGeTe3 thin film and located between the source electrode and the drain electrode. According to the invention, WS2 and InGeTe3 are applied to the JFET, the width of a depletion region in the N-type tungsten disulfide thin film is realized by regulating and controlling the voltage of the P-type InGeTe3 thin film, the adjustment of channel conductivity is realized, the generation of interface defects is inhibited, the influence of the interface state on carrier transport is reduced, the sub-threshold swing of the device is reduced by virtue of the advantage of no complex dielectric engineering of the JFET, and the switching ratio and the current density are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a junction field effect transistor and a preparation method thereof, in particular to an InGeTe-based 3 and tungsten disulfide junction field effect transistor and its preparation method. Background technique [0002] with WS 2 and MoS 2 The representative two-dimensional transition metal dichalcogenides (TMDCs) are considered to be semiconductor materials with great potential due to their atomic-level thickness, adjustable band gap, no surface dangling bonds, and superior mechanical properties. , wearable flexible devices, military information and other fields have broad application prospects. And InGeTe 3 As a new type of ternary material with layered structure, due to its excellent physical and chemical properties, it has become a new star in the field of low-dimensional material research. In theoretical prediction, InGeTe 3 Materials are direct semiconductors from ...

AI Technical Summary

Problems solved by technology

Pyo Jin Jeon of Yonsei University used black phosphorus (BP) and ZnO materials to construct a heterojunction. Although the prepared JFET realized the inverter function of a logic circuit, its on-off current ratio was only about 10. 4 , the average subthreshold swing is greater than 300mV / dec, and the stability is average (Nano Lett., 2016, 16, 1293-1298)

The June Yeong Lim research group and others also at Yonsei University in South Korea, based on two TMDCs materials (MoTe 2 and MoS 2 ) to construct a JFET, although the obtained device has a high mobility and a subthreshold swing reduced to 204mV / dec, the maximum switching current ratio exhibited by the device is only 5×10 4 (NPJ 2D Mater. and Appl., 2018, 2, 37)

In these existing works, researchers have made some more traditional TMDC materials and metal oxide semiconductor materials into heterojunctions to further construct JFET devices, lacking exploration and innovation in material selection, and the performance of the devices average performance

Images