Sapphire-based GaN quasi-vertical Schottky diode and reverse electric leakage improvement method thereof

Abstract

The invention discloses a sapphire-based GaN quasi-vertical Schottky diode and a reverse electric leakage improvement method thereof. The method comprises the following steps: cleaning a sapphire-based GaN sample; preparing a photoresist pickling film by adopting a photoetching process; etching the sample by adopting an inductively coupled plasma dry etching process until the n+GaN layer is etched; carrying out post-treatment on the etched GaN sample wafer by adopting O plasma, evaporating a Ti / Al / Ni / Au metal layer on the GaN sample wafer by adopting electron beams, and carrying out annealingtreatment; and preparing Ni / Au Schottky contact by adopting an electron beam. The method is efficient, easy to operate and easy to achieve, and lays a foundation for further application of GaN wide bandgap semiconductors.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a sapphire-based GaN quasi-vertical Schottky diode and a method for improving reverse leakage. Background technique [0002] The third-generation wide-bandgap semiconductor material represented by gallium nitride (GaN) is rapidly becoming the material of choice for high-frequency and high-power devices due to its high critical breakdown field strength and high electron saturation drift velocity. Especially in the field of power diode rectifier devices, it has important application prospects. As an important two-terminal electronic component, Schottky diode (SBD) has important applications in circuits such as detection and frequency mixing. [0003] However, an important problem at present is that the reverse leakage of the prepared Schottky diodes is generally large, which makes the device undergo early pre-breakdown under very low reverse bias vol...

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Problems solved by technology

[0003] However, an important problem at present is that the reverse leakage of the prepared Schottky diodes is generally large, which makes the device undergo early pre-breakdown under very low reverse bias voltage, which seriously reduces the performance of the device. and applications, so how to effectively reduce the reverse leakage is extremely important for expanding the application of GaN Schottky diodes

[0004] At present, the reported methods for reducing the reverse leakage of quasi-vertical GaN Schottky diodes mainly include treating the surface with ultraviolet ozone technology, and then preparing the Schottky anode metal; The influence of Tertky diodes is rarely reported at present. The only research is mainly limited to the influence of fluorine-based plasmas on AlGaN Schottky contacts. There are almost no research reports on plasmas on GaN quasi-vertical Schottky diodes.

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