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Method for extracting silane from epitaxial process tail gas by full-temperature-range pressure swing adsorption

A technology of pressure swing adsorption and full temperature range, applied in separation methods, chemical instruments and methods, silicon hydride, etc., to achieve the effect of reducing tail gas emissions

Pending Publication Date: 2021-04-13
ZHEJIANG TIANCAIYUNJI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no relevant technology and process for directly extracting and recovering silane from the tail gas of the epitaxy process in the industry

Method used

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  • Method for extracting silane from epitaxial process tail gas by full-temperature-range pressure swing adsorption
  • Method for extracting silane from epitaxial process tail gas by full-temperature-range pressure swing adsorption
  • Method for extracting silane from epitaxial process tail gas by full-temperature-range pressure swing adsorption

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1 As shown, a method for extracting silane by full-temperature pressure swing adsorption of epitaxial process tail gas, the specific implementation steps include,

[0039] (1) Raw material gas, based on silane (SiH4) as the main source of "silicon (Si)", methane (CH4) as the main source of "carbon (C)", and hydrogen chloride (HCl) as the main chlorine-based compound, and The tail gas produced in the chlorine-based Si / SiC epitaxial growth process based on silicon carbide (SiC) is prepared by chemical vapor deposition (CVD) with inert hydrogen (H2) as the carrier gas. The main components are H2, HCl, CH4 and SiH4. A small amount of SiHmCln, C2+, and a small amount of carbon monoxide (CO), carbon dioxide (CO2), water (H2O), and silicon dioxide (SiO2) and carbon (C) fine particles, at normal pressure and temperature.

[0040] (2) Pretreatment, the raw gas is sent to the pretreatment unit composed of dust collector, particle removal filter and oil mist collec...

Embodiment 2

[0047] Such as figure 2 As shown, on the basis of Example 1, the non-condensable gas from the compression condensation process is directly sent to the medium-temperature pressure swing adsorption concentration process composed of the two-stage PSA system after the cold and heat exchange, and the non-condensable gas is adsorbed from the first PSA The bottom of the tower (1-stage PSA) enters, and the non-adsorbed phase gas flowing out from the top of the 1-stage PSA tower is hydrogen-rich gas, which is output as the raw material gas for PSA hydrogen extraction for hydrogen extraction, and is desorbed from the bottom of the 1-stage PSA tower (reverse discharge, flushing or vacuum), the desorbed gas flowing out is pressurized and sent to the bottom of the second PSA adsorption tower (2-stage PSA), and the non-adsorbed phase gas flowing out from the top of the 2-stage PSA tower is the intermediate gas, which is returned to the inlet of the 1-stage PSA Feed gas - non-condensable ga...

Embodiment 3

[0049] Such as image 3 As shown, on the basis of Example 1, a water scrubber is added between the medium-temperature pressure swing adsorption concentration process and the compression condensation process, and the non-condensable gas from the compression condensation process first enters the scrubbing absorption tower with an operating temperature of 60-80 ° C. Water is the absorbent, which is sprayed down from the top of the washing and absorbing tower, and the non-condensable gas flows in from the bottom of the tower, and the purified non-condensable gas flowing out from the top of the washing and absorbing tower from the removal of HCl enters the medium temperature pressure swing adsorption for concentration, and flows from the washing and absorbing tower The crude hydrochloric acid flows out from the bottom and is exported.

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Abstract

The invention discloses a method for extracting silane from epitaxial process tail gas by full-temperature-range pressure swing adsorption. The method comprises the steps of pretreatment, compression condensation, medium-temperature pressure swing adsorption concentration, medium-shallow cold rectification, silane refining and HCl water washing. High-purity and high-yield purification and recovery of the effective component silane in the chlorine-containing or chlorine-free homogeneous or heterogeneous CVD epitaxial process tail gas are carried out on the Si, SiC or sapphire substrate, the effective component silane is returned to the CVD epitaxial process to be recycled, and meanwhile, hydrochloric acid can be byproduct, so that the effective component in the tail gas is recycled, the tail gas emission is reduced, and the blank of SiH4 recovery and purification technology of epitaxial process tail gas is filled.

Description

technical field [0001] The invention relates to the preparation and purification of silicon source body-silane gas required in the process of electronic and semiconductor materials, as well as the recovery and recycling of semiconductor process tail gas, and more specifically relates to a full-temperature variable pressure of epitaxial process tail gas A method for extracting silane by adsorption. Background technique [0002] Silane (SiH4) is one of the most basic raw materials in the preparation of electronic and semiconductor materials. In industry, the reaction method of magnesium silicide and ammonium chloride, the reduction method of trichlorosilane and the reduction method of silicon tetrafluoride, which are suitable for large-scale production, are usually used. And chlorosilane hydrogenation secondary disproportionation reaction (UCC) method. Different production processes have different impurity components in the obtained crude silane, and the separation and purifi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/04B01D53/047B01D53/00
CPCC01B33/043C01B33/046B01D53/047B01D53/002
Inventor 汪兰海钟娅玲钟雨明陈运唐金财蔡跃明
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD
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