According to the SiC polycrystal
powder and the preparation method and device, the gaseous
carbon source and the gaseous
silicon source which do not contain
chlorine serve as the unique
carbon source and the unique
silicon source, and introduction of the
chlorine element is completely eradicated from the source; by accurately controlling the
temperature gradient, the gas ratio and the flow velocity of the high-temperature
pyrolysis zone and the sub-high-temperature
reaction zone, the gaseous
carbon source and the gaseous
silicon source are subjected to instantaneous
thermal decomposition to form
pyrolysis mixed gas containing active silicon, carbon atoms and free radicals, and then
nucleation and growth are carried out in a thermodynamically stable hexagonal
crystal phase under the condition of no
solid carrier to form SiC polycrystal
powder. In the application, the reaction byproducts are only
hydrogen, unreacted carrier gas and trace undecomposed gaseous carbon source and gaseous silicon source, and do not contain HCl,
tar or toxic
chlorosilane, and the
tail gas can be directly discharged or simply recovered, so that the environment-friendly treatment cost is greatly reduced. The preparation method is clean, high in efficiency, high in product purity, single in
crystal phase and suitable for large-scale preparation of the high-quality hexagonal
crystal phase SiC
powder.