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Amorphous indium-aluminum-tin oxide thin film transistor and preparation method thereof

A thin film transistor, tin oxide technology, applied in the field of amorphous indium aluminum tin oxide thin film transistor and its preparation

Inactive Publication Date: 2021-04-20
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has not been any related report on the preparation of IATO TFT by radio frequency magnetron sputtering

Method used

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  • Amorphous indium-aluminum-tin oxide thin film transistor and preparation method thereof
  • Amorphous indium-aluminum-tin oxide thin film transistor and preparation method thereof
  • Amorphous indium-aluminum-tin oxide thin film transistor and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] An amorphous indium aluminum tin oxide thin film transistor, such as figure 1 As shown, it includes a substrate, a gate dielectric layer, and an amorphous IATO active layer arranged sequentially from bottom to top. The amorphous IATO active layer is provided with a source electrode and a drain electrode, and the IATO has a single-layer structure.

[0075] Compared with the current mainstream IGZO TFT, the IATO TFT provided by the present invention uses amorphous IATO as the active layer, which can greatly increase the bandgap width and modulation range of the active layer, and further improve the light stability of TFT performance. Secondly, the Al-O bond in IATO has higher binding energy than the Ga-O bond in IGZO, which is more beneficial to the effective regulation of the carrier concentration in the active layer and the improvement of the electrical stability of TFT. Replacing the Zn element in IGZO with Sn in IATO is not only beneficial to improve the electrical an...

Embodiment 2

[0077] According to an indium aluminum tin oxide thin film transistor provided in embodiment 1, the difference lies in:

[0078] The content of the metal element In in the amorphous IATO active layer is 15%-60%, the content of Al is 15%-50%, and the content of Sn is 15%-50%;

[0079] The thickness of the amorphous IATO active layer is 5-150nm;

[0080] The substrate includes at least one of the commonly used hard conductive substrates such as heavily doped Si substrates, ITO glass, FTO glass, AZO glass, and flexible substrates covered with conductive layers;

[0081] The material of the gate dielectric layer includes at least Ta 2 o 5 , SiO 2 、Al 2 o 3 , HfO 2 , silicon nitride and other commonly used gate dielectric materials;

[0082] The thickness of the gate dielectric layer is 5-200nm;

[0083] The material of the source electrode and the drain electrode includes at least gold (Au), titanium (Ti), aluminum (Al), palladium (Pd), platinum (Pt), nickel (Ni), molybden...

Embodiment 3

[0087] According to an indium aluminum tin oxide thin film transistor provided in embodiment 1, the difference lies in:

[0088] The content of metal element In in the amorphous IATO active layer is 30%-55%, the content of Al is 15%-35%, and the content of Sn is 15%-35%.

[0089] The thickness of the amorphous IATO active layer is 30 nm.

[0090] Substrate is P + -Si substrate. P + -The surface of the Si substrate has been polished, which is conducive to the growth of a gate dielectric layer and an amorphous IATO active layer with high flatness, and the P + -Si can be directly used as the bottom gate.

[0091] The material of the gate dielectric layer is Ta 2 o 5 , The thickness of the gate dielectric layer is 70nm.

[0092] Both the source electrode and the drain electrode are made of Au.

[0093] Both the thickness of the source electrode and the drain electrode were 50 nm.

[0094] The dimensions of the channel between the source electrode and the drain electrode a...

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Abstract

The invention relates to an amorphous indium-aluminum-tin oxide thin film transistor and a preparation method thereof. The transistor sequentially comprises a substrate, a gate dielectric layer, an amorphous IATO active layer, a source electrode and a drain electrode from bottom to top, the gate dielectric layer grows on the substrate, the IATO active layer grows on the gate dielectric layer, and the source electrode and the drain electrode grow on the IATO active layer; the preparation method comprises the following steps: (1), cleaning a substrate; (2), growing a gate dielectric layer on the substrate; (3), growing an IATO active layer on the gate dielectric layer by using a radio frequency magnetron sputtering method; (4), growing a source electrode and a drain electrode on the surface of the IATO active layer; and (5), carrying out post-annealing treatment on the generated IATO TFT to obtain the amorphous indium-aluminum-tin oxide thin film transistor. By adopting a preparation process of a radio frequency magnetron sputtering method, an insulator film and a semiconductor film material which are close to a target material in component, compact and good in uniformity can be prepared, the preparation process is compatible with an existing panel display process, and low-temperature and room-temperature preparation of the IATO TFT is facilitated.

Description

technical field [0001] The invention relates to an amorphous indium aluminum tin oxide thin film transistor and a preparation method thereof, belonging to the technical field of semiconductor materials and devices. Background technique [0002] With the rapid development of flat panel display, transparent electronics and other fields, people's requirements for thin film transistor (TFT) technology continue to increase, and traditional silicon-based active layer materials have exposed more and more deficiencies, such as the migration of amorphous silicon films The rate is low, and the preparation temperature of the polysilicon film is high, and the uniformity and transparency are not good. Amorphous oxide semiconductor (AOS) has been widely used as the active layer material of thin film transistors due to its advantages of high mobility and optical transmittance, low preparation temperature and good uniformity. As a representative of AOS TFT, amorphous indium gallium zinc ox...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L29/786H01L21/34H01L21/02
Inventor 冯先进徐伟东
Owner SHANDONG UNIV