Copper tungstate photo-anode film and preparation method thereof

A technology of copper tungstate and photoanode, applied in the direction of electrodes, liquid chemical plating, coating, etc., can solve the problems of uncontrollable thickness and performance of copper tungstate film, many surface defects, poor repeatability, etc.

Inactive Publication Date: 2021-04-23
NORTH CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the hydrothermal method and the sol-gel method are mainly used to prepare copper tungstate films. Among them, the surface of the film synthesized by the hydrothermal method is relatively rough and the thickness is uneven, resulting in many surface defects, which affect t...

Method used

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  • Copper tungstate photo-anode film and preparation method thereof
  • Copper tungstate photo-anode film and preparation method thereof
  • Copper tungstate photo-anode film and preparation method thereof

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preparation example Construction

[0023] The invention provides a kind of preparation method of copper tungstate photoanode film, comprising the following steps:

[0024] (1) Mix copper nitrate trihydrate, ammonium metatungstate and water to obtain a precursor solution;

[0025] (2) carry out ultrasonic spray pyrolytic coating to the precursor solution that described step (1) obtains, form copper tungstate precursor thin film on substrate;

[0026] (3) heat-treating the copper tungstate precursor film obtained in the step (2) to obtain a copper tungstate photoanode film.

[0027] The invention mixes copper nitrate trihydrate, ammonium metatungstate and water to obtain a precursor solution. In the present invention, the copper nitrate trihydrate is preferably analytically pure; the ammonium metatungstate is preferably analytically pure; the water is preferably deionized water. In the present invention, the sources of the copper nitrate trihydrate, ammonium metatungstate and water are not particularly limited,...

Embodiment 1

[0049] Reagents: acetone of analytical grade, anhydrous ethanol of analytical grade, copper nitrate trihydrate with a purity of 99.9 wt%, and ammonium metatungstate with a purity of 99.5 wt%.

[0050] Device: MSK-USP-04C Ultrasonic Atomization Coating Apparatus produced by Shenyang Kejing Automation Equipment Co., Ltd.

[0051] Preparation:

[0052] (1) Cleaning of the substrate

[0053] Using conductive glass as the substrate, the substrate was ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 15 minutes, and then used.

[0054] (2), the configuration of the precursor liquid

[0055] Dissolve 2.416g of copper nitrate trihydrate into 200mL of deionized water, stir until clear, then weigh 2.4636g of ammonium metatungstate and add it to the above solution, continue stirring until clear, and let it stand for 30 minutes to obtain a precursor solution. (Wherein, the concentration of copper ions in the precursor solution is 0.05mol / L, and the ratio of t...

Embodiment 2

[0062] Reagents: acetone of analytical grade, anhydrous ethanol of analytical grade, copper nitrate trihydrate with a purity of 99.9 wt%, and ammonium metatungstate with a purity of 99.5 wt%.

[0063] Device: MSK-USP-04C Ultrasonic Atomization Coating Apparatus produced by Shenyang Kejing Automation Equipment Co., Ltd.

[0064] Preparation:

[0065] (1) Cleaning of the substrate

[0066] Use conductive glass as the substrate, ultrasonically clean the substrate in acetone, absolute ethanol, and deionized water for 15 minutes, and set aside;

[0067] (2), the configuration of the precursor liquid

[0068] Dissolve 4.832g of copper nitrate trihydrate into 200mL of deionized water, stir until clear, then weigh 4.9272g of ammonium metatungstate and add it to the above solution, continue stirring until clear, and let it stand for 30 minutes to obtain a precursor solution. (Wherein, the concentration of copper ions in the precursor solution is 0.1mol / L, and the ratio of the amount...

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Abstract

The invention relates to the technical field of photoelectrocatalysis, and provides a preparation method of a copper tungstate photo-anode film. The preparation method comprises the following steps: mixing copper nitrate trihydrate, ammonium metatungstate and water to obtain a precursor solution; carrying out ultrasonic spray pyrolysis coating on the obtained precursor solution to form a copper tungstate precursor film on the substrate; and carrying out heat treatment on the obtained copper tungstate precursor film to obtain the copper tungstate photo-anode film. According to the preparation method, the precursor solution can be atomized into nanoscale small liquid drops by adopting an ultrasonic spray pyrolysis coating method, the solid film with uniform thickness is finally formed on the substrate through reaction processes such as solvent evaporation and solute thermal decomposition, crystallization of the precursor film can be promoted during heat treatment, and the uniformity of the structure of the copper tungstate photo-anode film is further improved, so that the visible light responsiveness of the copper tungstate photo-anode film can be improved. Experimental results show that the copper tungstate photo-anode film prepared by the preparation method provided by the invention is uniform in thickness and has excellent photoelectric properties.

Description

technical field [0001] The invention relates to the technical field of photoelectric catalysis, in particular to a copper tungstate photoanode film and a preparation method thereof. Background technique [0002] With the rapid economic development and the use of fossil fuels, the problems of energy shortage and environmental pollution are becoming more and more serious. Photocatalytic technology with semiconductor materials as the core can convert solar energy into hydrogen energy with high energy density and cleanliness, which is expected to solve current energy problems and improve environmental problems. The current practical application of photoelectrochemical water splitting technology for hydrogen production is limited by the low photocurrent density of photoanode materials. In actual use, it is required that the band gap of the semiconductor material should not be too wide and the photoelectrochemical stability should be good. The bandgap width of copper tungstate i...

Claims

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Application Information

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IPC IPC(8): C23C18/12C25B1/04C25B1/55C25B11/052C25B11/054C25B11/087
CPCC23C18/1216C23C18/1258C23C18/1295C25B1/04Y02E60/36
Inventor 王建省曾雄丰
Owner NORTH CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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