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Annealing-free high-uniformity crystal growth method and equipment

A crystal growth and crystal technology, applied in the field of oxide crystal growth, can solve problems such as deviation, easy-to-crack components, long production cycle, etc.

Inactive Publication Date: 2021-05-07
MEISHAN BOYA ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] This application discloses a method for growing crystals with large size and high uniformity without annealing. Using this method, crystal growth has surprisingly excellent repeatability, and the quality of crystal growth can be guaranteed every time. It achieves an amazing consistency, which solves the problems that silica is volatile, easy to crack and deviate from components during growth, long production cycle, and difficult to obtain crystals with uniform scintillation properties and oxygen vacancy

Method used

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  • Annealing-free high-uniformity crystal growth method and equipment
  • Annealing-free high-uniformity crystal growth method and equipment
  • Annealing-free high-uniformity crystal growth method and equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Embodiment 1 - installation of temperature field device 200

[0089]Step 1: Install the bottom plate 202 on the aluminum plate of the crystal growth furnace, adjust the levelness of the bottom plate 202, and the level requirement is 0.02 mm / m.

[0090] Step 2: Install the second barrel 206 on the bottom plate 202 and adjust the concentricity and verticality between the two. The concentricity between the second barrel 206 and the bottom plate 202 is less than 0.5 mm, and the perpendicularity is less than 0.2 degrees.

[0091] Step 3: Install the first barrel 204 on the bottom plate 202 and adjust the concentricity and verticality between the two. The concentricity between the first barrel 204 and the bottom plate 202 is less than 0.5 mm, and the perpendicularity is less than 0.2 degrees. After the installation is completed, use high-temperature glue to seal the connection between the first cylinder 204 and the bottom plate 202 to ensure that the positive pressure does ...

Embodiment 2

[0100] Embodiment 2: Ce: LSO crystal growth

[0101] Crystals were grown in an open hearth single crystal growth induction furnace using medium frequency induction heating up-pulling method. Install the temperature field device according to steps 1-5 in Example 1. The reaction material with a purity of 99.999% was baked at a high temperature of 1000°C for 5 hours and then naturally cooled to a room temperature of 35°C and taken out. The reaction materials are weighed according to the molar ratio of each reaction material in the reaction equation. The reaction equation is as follows:

[0102] (1-x)Lu 2 o 3 +SiO2 2 +2xCeO 2 → Lu 2(1-x) Ce 2x SiO 5 +x / 2O 2 ↑

[0103] Among them, x=0.16%, SiO 2 Excessive 0.2% of its own total weight, other raw materials are weighed according to the stoichiometric ratio in the chemical equation. The total weight of the crucible 214 charge is 10000 grams, Lu 2 o 3 , SiO 2 and CeO 2 The weights are 8674 grams, 1314 grams and 12 grams...

Embodiment 3

[0107] Embodiment 3: Ce:LYSO crystal growth

[0108] Crystals were grown in an open hearth single crystal growth induction furnace using medium frequency induction heating up-pulling method. Install the temperature field device according to steps 1-5 in Example 1. The reaction material with a purity of 99.999% was calcined at a high temperature of 1200°C for 5 hours, then naturally cooled to room temperature of 35°C and taken out. The reaction materials are weighed according to the molar ratio of each reaction material in the reaction equation. The reaction equation is as follows:

[0109] (1-x-y) Lu 2 o 3 +yY 2 o 3 +SiO2 2 +2xCeO 2 → Lu 2(1-x-y) Y 2y Ce 2x SiO 5 +x / 2O 2 ↑ (2)

[0110] Among them, x=0.16%, y=20%, SiO 2 Excessive 2% of its own total weight, other raw materials are weighed according to the stoichiometric ratio in the chemical equation. The total weight of the crucible 214 charge is 10000 grams, Lu 2 o 3 , Y 2 o 3 , SiO 2 and CeO 2The weight...

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Abstract

The invention discloses an annealing-free high-uniformity crystal growth method and equipment. The crystal growth method comprises the following steps: weighing reaction materials after carrying out first pretreatment on the reaction materials for growing oxide crystals; after performing pre-assembly treatment on at least one part of a crystal growth device, placing the reaction material subjected to the second pretreatment in the crystal growth device, the at least one part of the crystal growth device comprising a crucible (214); the pre-assembly treatment process at least comprises one or more of coating protection, acid liquid soaking and washing and foreign matter cleaning of the crucible (214); flowing gas is introduced into the crystal growth device after the crystal growth device is closed; and adding a reaction material supplement into the crystal growth device in real time in the crystal growth process.

Description

technical field [0001] The present application relates to the field of crystal growth, in particular to a growth method and equipment for growing oxide crystals with large size and high uniformity without annealing. Background technique [0002] Scintillation crystal is an energy conversion medium that can convert ionizing radiation energy (such as γ-rays, X-rays) into light energy (mainly visible light), which is widely used in nuclear medicine such as X-ray tomography (CT), positron Launch tomography (PET), nuclear detection technologies such as industrial tomography (industrial CT), oil well exploration, nuclear physics, high-energy physics, environmental testing, safety testing, weaponry fire control and guidance, etc. Especially in the fields of high-energy physics and nuclear medical imaging, scintillation crystals are required to have high light yield, strong γ-ray absorption capacity, short luminescence decay time, large irradiation hardness, density, atomic number, ...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/22
CPCC30B15/12C30B15/14C30B15/206C30B29/34C30B35/007C30B29/20C30B15/002C30B15/02C30B15/22C30B29/22C30B15/10C30B29/28
Inventor 王宇官伟明梁振兴李敏
Owner MEISHAN BOYA ADVANCED MATERIALS CO LTD