A kind of film with high luminous intensity, preparation method and use thereof

A technology of thin film preparation and luminous intensity, which is applied in the field of chemical modification, can solve the problems of randomness in the enhancement area, insignificant enhancement effect, and long preparation cycle, and achieve the effects of short preparation cycle, low cost and high production capacity

Active Publication Date: 2022-07-22
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are usually complicated in process, long in preparation period and high in cost.
In addition, the enhanced area is random, and the enhanced effect is not obvious, usually only 5-10 times the enhanced effect

Method used

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  • A kind of film with high luminous intensity, preparation method and use thereof
  • A kind of film with high luminous intensity, preparation method and use thereof
  • A kind of film with high luminous intensity, preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The preparation process flow diagram of Example 1 can be referred to figure 1 , figure 1 It is a process flow diagram of the thin film preparation method of the present invention.

[0050] like figure 1 As shown, the film preparation method includes the following steps:

[0051] Step 1: Preparation of molybdenum disulfide: using sulfur powder and molybdenum trioxide powder as raw materials, wherein, sulfur powder (product source: Sigma-Aldrich, 99.99%, 500mg) and molybdenum trioxide powder (product source: Sigma-Aldrich, 99.98%, 5mg), sulfur powder and molybdenum trioxide powder were placed in the upstream and central positions of the tube furnace respectively with a distance of 31cm, the substrate was placed 2cm downstream of the molybdenum trioxide powder, and then passed through chemical vapor Deposition method (wherein, the process adopted by chemical vapor deposition method can be conventional process means, for example, the heating temperature is 850 ° C) to ob...

Embodiment 2

[0060] The preparation process flow chart of embodiment 2 can refer to figure 1 , figure 1 It is a process flow diagram of the thin film preparation method of the present invention.

[0061] like figure 1 As shown, the film preparation method includes the following steps:

[0062] Step 1: Preparation of tungsten disulfide: using sulfur powder and tungsten oxide powder as raw materials, wherein, sulfur powder (product source is Sigma-Aldrich, 99.99%, 1g) and tungsten trioxide powder (product source is Sigma-Aldrich, 99.98% , 5mg) were placed in two quartz boats, and 15mg of sodium chloride powder was added to the tungsten trioxide powder as a flux. The sulfur powder was placed in the center of the low temperature zone of the tube furnace, 55 cm away from the tungsten trioxide powder placed in the center of the high temperature zone of the tube furnace. Then, the substrate is placed downstream of the tungsten trioxide powder at a distance of 0.5 cm, and then a single-layered...

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Abstract

The invention discloses a method for preparing a thin film with high luminescence intensity. The steps include: step A: preparing a sulfide thin film on a substrate by a chemical vapor deposition method; step B: applying a trifluoromethanesulfonic acid solution to the The surface of the sulfide film is modified to obtain a film with high luminescence intensity. In addition, the present invention also discloses a thin film with high luminous intensity, which is prepared by the above-mentioned thin film preparation method. In addition, the present invention also discloses the use of the above-mentioned high luminous intensity thin film for preparing a two-dimensional optoelectronic device. The present invention prepares high-efficiency luminescent molybdenum disulfide and tungsten disulfide thin films by using trifluoromethanesulfonic acid solution to modify the surface of molybdenum disulfide and tungsten disulfide, and solves the problem of molybdenum disulfide and tungsten disulfide luminescence. problem of inefficiency.

Description

technical field [0001] The invention relates to a chemical modification method for improving the luminous efficiency of a monolayer transition metal chalcogenide compound, in particular to a chemical modification method for improving the luminous efficiency of a monolayer transition metal chalcogenide compound such as molybdenum disulfide and tungsten disulfide by using an organic superacid Modification method. Background technique [0002] Transition metal dichalcogenides (TMDs for short) are similar to graphene due to their large specific surface area, good flexibility, and high potential carrier mobility. TMDs also have unique layer-dependent band gaps in the visible and near-infrared spectral regions. feature. Therefore, transition metal sulfides have a wide range of applications in various optoelectronic devices, such as light-emitting devices, transistors, photovoltaic devices, and nano-resonator lasers. [0003] Currently, the controllable large-area synthesis of 1L...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/44C23C16/56H01L33/26B05D1/00
CPCC23C16/305C23C16/56C23C16/4401H01L33/26B05D1/005
Inventor 刘为振李远征孙颖冯秋实
Owner NORTHEAST NORMAL UNIVERSITY
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