Chemical vapor deposition method and device for submicron diamond film

Abstract

The invention discloses a microwave plasma chemical vapor deposition method and device for a submicron diamond film. The method comprises the following steps: placing a seed crystal substrate on a pad, placing the pad in a growth chamber of MPCVD equipment, adjusting the pressure in the growth chamber, operating a microwave source, adjusting the temperature of the pad, and adjusting the pad to a height required by growth along with the rise of the seed crystal substrate; the device comprises a cushion plate, a tray, a quartz window and a cushion plate movement mechanism, the cushion plate, the tray, a cooling plate and the quartz window are sequentially arranged from top to bottom, and the cushion plate is connected to the power output end of the cushion plate movement mechanism; and a heating device is arranged in the cushion plate. The height and the rotation rate of a growth pad are adjusted through the pad movement mechanism, the epitaxial thin film deposition efficiency is controlled in a pad heating mode, the deposition rate of each epitaxial area is optimized, the height of the pad is dynamically adjusted along with the increase of the height of the seed crystal substrate in the growth process, rotation is conducted, the growth continuity and uniformity of the same seed crystal substrate can be ensured, and the crystal quality is ensured.

Description

technical field [0001] The invention relates to a device for preparing a submicron-sized diamond film, which is used to prepare a sub-micron-sized diamond single crystal or polycrystalline epitaxy on a surface with a nano-sized roughness, so as to prepare a semiconductor device, and belongs to diamond homogeneous or heterogeneous epitaxy Growth technology field. Background technique [0002] Diamond has excellent physical and chemical properties such as ultra-high hardness, high thermal conductivity, high thermal stability, 5.47eV band gap and wide-area light transmission. It has always attracted attention from various fields and is called "the ultimate semiconductor material". . At present, diamond single crystals used in semiconductor devices are mainly doped with elements such as boron and phosphorus or terminated with hydrogen atoms on the surface to achieve material conductivity. Among them, the technology of element doping still has a large number of scientific and t...

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Problems solved by technology

[0007] The present invention aims at the problem that the existing chemical vapor deposition diamond film has insufficient adjustment of the seed crystal growth pad, the pad cannot be self-heated, and the crystal quality needs to be improved during the growth process of the existing chemical vapor deposition diamond film. Microwave Plasma Chemical Vapor Deposition Apparatus for Quality Submicron Diamond Thin Films

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