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Alpha-MnSe nanosheet and preparation method and application thereof

A nanosheet and square technology, applied in the field of α-MnSe nanosheets and their preparation, can solve the problems of poor control of the thickness, size and mass production of two-dimensional nanosheets, limit the exploration and practical application of basic properties, etc., and achieve excellent light detection. The effect of high performance, fast synthesis speed and high crystallization quality

Active Publication Date: 2021-05-28
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above magnetic materials are all based on the traditional mechanical exfoliation method, which has very poor control over the thickness, size, and mass production of 2D nanosheets, which inevitably limits the exploration of their fundamental properties and further practical applications.

Method used

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  • Alpha-MnSe nanosheet and preparation method and application thereof
  • Alpha-MnSe nanosheet and preparation method and application thereof
  • Alpha-MnSe nanosheet and preparation method and application thereof

Examples

Experimental program
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Embodiment 1

[0053] This embodiment provides an α-MnSe(001) square nanosheet, and the preparation method of the α-MnSe(001) square nanosheet includes the following steps:

[0054] Place the Se powder in the low temperature zone of the dual temperature zone tube furnace, MnO 2 The powder is placed in the high temperature zone of the dual temperature zone tube furnace, and the mica substrate is placed in the MnO 2 At 2 to 6 cm behind the powder, after cleaning the quartz tube with argon, raise the temperature in the low-temperature zone to 280°C, and the temperature in the high-temperature zone to 720°C; continue to feed the mixed gas of argon and hydrogen, and the flow rate of argon The growth time is 120 sccm, the flow rate of hydrogen is 10 sccm, the growth time is 30 min, and then naturally cooled to room temperature.

[0055] specifically, figure 1 a is an optical microscope (OM) image of α-MnSe(001) square nanosheets grown on a mica substrate; figure 2 a is the atomic force microsc...

Embodiment 2

[0060] This embodiment provides a kind of α-MnSe(111) triangular nanosheet, the preparation method of the α-MnSe(111) triangular nanosheet includes the following steps:

[0061] Place the Se powder in the low temperature zone of the dual temperature zone tube furnace, MnCl 2 The powder is placed in the high temperature zone of the dual temperature zone tube furnace, and the mica substrate is placed in the MnCl 2 At 2 to 6 cm behind the powder, after cleaning the quartz tube with argon, raise the temperature in the low-temperature zone to 280°C, and the temperature in the high-temperature zone to 660°C, and continuously feed the mixed gas of argon and hydrogen. Among them, the flow rate of argon 100-150 sccm, the hydrogen flow rate is 5-20 sccm, the growth time is 15-50 min, and then naturally cooled to room temperature.

[0062] specifically, figure 1 b is an optical microscope (OM) image of α-MnSe(111) triangular nanosheets grown on a mica substrate, figure 2 b is the ato...

Embodiment 3

[0067] In this example, the α-MnSe nanosheets of Examples 1 and 2 were made into transistor devices through EBL and thermal evaporation processes, and their performance in photodetection was tested. The laser wavelength used was 473nm.

[0068] specifically, Figure 8 a is the output characteristic curve of the photodetector of α-MnSe(001) square nanosheets under different laser intensities, Figure 7 A device diagram based on α-MnSe(001) square nanosheets, thermally evaporated Cr / Au(8 / 60nm) as source and drain electrodes; by Figure 7 and Figure 8 a It can be seen that the α-MnSe(001) square nanosheets exhibit obvious photoresponse after adding light. Figure 8 b is the optical switching characteristics of the α-MnSe photodetector under different light intensities, given by Figure 8 b It can be seen that the device has good stability. Figure 8 c is the photodetection responsivity of α-MnSe(001) square nanosheets, given by Figure 8 c It can be seen that α-MnSe(001) sq...

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Abstract

The invention relates to the field of photoelectric materials, in particular to an alpha-MnSe nanosheet and a preparation method and application thereof. The preparation method of the alpha-MnSe nanosheet comprises the following steps: Se and a manganese source are used as raw materials, and the alpha-MnSe nanosheet is prepared by a chemical vapor deposition method; and the manganese source is MnO2 or MnCl2. Based on specific raw materials, the alpha-MnSe nanosheet is prepared on a mica substrate through a chemical vapor deposition (CVD) method, wherein the alpha-MnSe nanosheet is an antiferromagnetic wide-band gap semiconductor; according to the preparation method, the controllability on the size and thickness of the alpha-MnSe nanosheet is good, the process is simple, the synthesis speed is high, and the prepared alpha-MnSe nanosheet is high in crystal quality and good in stability. According to the invention, a good material choice is provided for two-dimensional magnetic research; the alpha-MnSe nanosheet prepared by the method disclosed by the invention is applied to a photoelectric detector and has very excellent optical detection performance.

Description

technical field [0001] The invention relates to the field of optoelectronic materials, in particular to an α-MnSe nanosheet and its preparation method and application. Background technique [0002] Atomically thin two-dimensional materials have attracted extensive attention from researchers due to their excellent electrical, optical, mechanical, and magnetic properties, as well as their wide applications in electronics, optoelectronics, and spintronic devices. Among them, two-dimensional magnetic materials have become a research hotspot that has attracted much attention in recent years due to their unique two-dimensional magnetic properties. [0003] Currently, many research efforts are devoted to exploring and studying 2D magnetic materials. For example, in fewer layers of CrI 3 The huge tunneling magnetoresistance is realized in the material, and the magnetoresistance ratio can reach 19000%, which is even higher than the traditional MgO-based magnetic tunneling junction....

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y30/00B82Y40/00H01L31/08
CPCC01B19/007B82Y30/00B82Y40/00H01L31/08C01P2002/72C01P2004/04C01P2004/61C01P2004/64Y02P70/50
Inventor 何军李宁宁王振兴
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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