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Quartz resonator based on piezoelectric film transduction and electronic equipment

A technology of quartz resonators and piezoelectric thin films, applied in the direction of electrical components, impedance networks, etc., can solve problems such as the difference in frequency and temperature coefficient of piezoelectric thin film layers, difficulties in preparing quartz resonators, and low electromechanical coupling coefficients, and achieve device manufacturing processes Easy, high frequency stability, high Q effect

Active Publication Date: 2021-06-25
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002]The traditional MEMS (Micro-Electro-Mechanical System, micro-electromechanical system) resonator based on piezoelectric film is usually composed of piezoelectric film layer and upper and lower electrodes, and its resonant frequency Higher and simpler to prepare, higher electromechanical coupling coefficient, but due to the poor frequency temperature coefficient of the piezoelectric film layer and high acoustic loss, the Q value of this resonator is low and the frequency stability is not high
On the other hand, traditional quartz resonators have high Q value and high frequency stability, but their electromechanical coupling coefficient is low, and it is difficult to prepare quartz resonators with high resonant frequency

Method used

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  • Quartz resonator based on piezoelectric film transduction and electronic equipment
  • Quartz resonator based on piezoelectric film transduction and electronic equipment
  • Quartz resonator based on piezoelectric film transduction and electronic equipment

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Embodiment Construction

[0022] The details of each part marked in the figure in this article are as follows:

[0023] 10: Substrate, the material can be single crystal silicon, gallium arsenide, sapphire, quartz or lithium niobate, etc.

[0024] 20: Acoustic mirror, specifically an air cavity, a Bragg reflection layer or other equivalent acoustic reflection structures.

[0025] 30 / 50: The first electrode / the second electrode, the material can be molybdenum, platinum, gold, aluminum, copper, silver and other commonly used thin film electrode materials or the composite or alloy of the above metals.

[0026] 40: Piezoelectric film transduction layer, the material can be selected from non-quartz piezoelectric film materials such as aluminum nitride, doped aluminum nitride, zinc oxide, lithium niobate, lithium tantalate or lead zirconate titanate, and the material is required to be electromechanically coupled The coefficient is greater than the electromechanical coupling coefficient of quartz.

[0027] ...

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Abstract

The invention discloses a quartz resonator based on piezoelectric film transduction, and the quartz resonator comprises a substrate, an acoustic mirror, a piezoelectric film transduction layer, a quartz resonance main body layer, a first electrode and a second electrode, wherein the electromechanical coupling coefficient of the piezoelectric film transduction layer is greater than that of the quartz resonance main body layer. The quartz resonator has the characteristics of high Q value, high electromechanical coupling coefficient, high frequency stability, simple manufacturing and the like.

Description

technical field [0001] The invention relates to the field of microelectronic equipment, in particular to a quartz resonator based on piezoelectric film transduction and electronic equipment. Background technique [0002] Traditional MEMS (Micro-Electro-Mechanical System) resonators based on piezoelectric films are usually composed of piezoelectric film layers and upper and lower electrodes. The frequency temperature coefficient of the piezoelectric film layer is poor and the acoustic loss is high, and the Q value of this resonator is low and the frequency stability is not high. On the other hand, the traditional quartz resonator has high Q value and high frequency stability, but its electromechanical coupling coefficient is low, and it is difficult to prepare a quartz resonator with high resonance frequency. Contents of the invention [0003] In view of this, the present invention proposes a quartz resonator and electronic equipment based on piezoelectric film transductio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H3/02
CPCH03H9/17H03H3/02
Inventor 张孟伦庞慰
Owner TIANJIN UNIV
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