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Copper-zinc-tin-sulfur-selenium semitransparent solar cell device and preparation method thereof

A copper-zinc-tin-sulfur-selenide and solar cell technology, applied in the field of solar energy, can solve problems such as hindering charge extraction

Inactive Publication Date: 2021-07-06
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The main reason is that the non-ohmic complex behavior between the p-kesterite / n-TCO interface may hinder the charge extraction

Method used

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  • Copper-zinc-tin-sulfur-selenium semitransparent solar cell device and preparation method thereof
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  • Copper-zinc-tin-sulfur-selenium semitransparent solar cell device and preparation method thereof

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Embodiment Construction

[0041] The invention discloses a high-efficiency copper-zinc-tin-sulfur semitransparent solar cell device and a preparation method thereof. The invention discloses two types of translucent back electrodes, which can achieve good stability and repeatability by using the solution method at the same time, and can be used to prepare copper-zinc-tin-sulfur thin-film light-absorbing materials with high crystal quality, good film appearance, and no impurity phase. The prepared copper-zinc-tin-sulfur translucent thin-film solar cell has high photoelectric conversion efficiency.

[0042] The embodiments of the present invention are described in detail below. This embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following examples .

[0043] The present invention can be better understoo...

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Abstract

The invention discloses a copper-zinc-tin-sulfur-selenium semitransparent solar cell device and a preparation method thereof. The preparation method comprises the following steps: taking semitransparent fluorine-doped tin oxide (FTO) or FTO-MoO3 as a back electrode; the copper-zinc-tin-sulfur-selenium semitransparent solar cell device being composed of soda-lime glass, an FTO / FTO-MoO3 back electrode, a copper-zinc-tin-sulfur-selenium absorption layer, a cadmium sulfide buffer layer, a high-resistance intrinsic zinc oxide window layer, a low-resistance indium tin oxide window layer and a nickel-aluminum or silver electrode. The preparation method comprises the following steps of: cleaning commercial FTO conductive glass, evaporating MoO3 with different thicknesses on the FTO conductive glass, and then preparing each layer of film in sequence to obtain the CZTSSe semitransparent solar cell device taking FTO / FTO-MoO3 as the back electrode. The use of the semitransparent back electrode increases many possibilities for the application of the thin-film solar cell, including the generation of electric energy from the back, so that the thin-film solar cell becomes a double-sided device and has great industrial application potential.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and specifically relates to a copper-zinc-tin-sulfur-selenium semitransparent solar cell device and a preparation method thereof, especially a kind of FTO or FTO-MoO 3 Method for fabricating highly efficient copper-zinc-tin-sulfur-selenium semitransparent solar cells for back electrodes. Background technique [0002] With the rapid development of economy, people pay more and more attention to energy and environmental issues. Solving the increasingly prominent problems of energy shortage and environmental pollution is an urgent need to achieve sustainable development and improve people's quality of life. Therefore, the development and large-scale application of renewable energy has risen to the height of the national development strategy. Solar energy is an inexhaustible renewable energy source, which has the advantages of cleanness, no pollution, sustainable utilization, huge reserves and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/0749H01L31/18H01L21/02
CPCH01L31/0749H01L31/18H01L31/1884H01L31/022441H01L31/022466H01L21/02568H01L21/02628H01L31/0322Y02P70/50Y02E10/541
Inventor 辛颢周亚格龚元才朱强相春旭代琪
Owner NANJING UNIV OF POSTS & TELECOMM
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