Check patentability & draft patents in minutes with Patsnap Eureka AI!

A pretreatment process of wc-co substrate before CVD diamond coating

A diamond coating and pretreatment technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc. Improve the decobalt efficiency, eliminate stress concentration, and improve the effect of nucleation density

Active Publication Date: 2022-05-24
HU-NAN NEW FRONTIER SCI & TECH LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method not only has low cobalt removal efficiency, but the depth of cobalt removal is difficult to meet the requirements. At the same time, too long strong acid etching time will lead to loosening of the substrate, which will reduce the strength of the substrate. If the thickness of the loose layer is too large, it will affect the adhesion between the substrate and the coating. Negative impact
In addition, in the prior art, strong acid decobaltization is usually carried out at a relatively high temperature, and the volatile gas generated during use is harmful to the human body

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] In the WC-Co matrix used in Example 1, the mass fraction of Co is 6%.

[0046] 1) Using Murakami reagent (K 3 [Fe(CN)] 6 : KOH: H 2 O=1:1:10 (volume ratio)) to alkali-etch the WC-Co substrate for 20 minutes, then ultrasonically clean it in absolute ethanol for 10 minutes, then ultrasonically clean it with deionized water for 5 minutes, and finally bake it in an oven for 2 minutes;

[0047] 2) The WC-Co substrate was acid-etched with aqua regia for 30s, then ultrasonically cleaned in absolute ethanol for 10min, then ultrasonically cleaned with deionized water for 5min, and finally baked in an oven for 2min;

[0048] 3) with Pt as cathode, WC-Co matrix as anode, placed in electrolyte, electrochemical corrosion was carried out 4h under the electrolytic voltage of 0.5V, and the composition of described electrolyte was composed as follows: cobalt sulfate 2g / mol, boric acid 2g / mol, sodium chloride is 3g / mol, the pH of the electrolyte is 5, and after deep decobaltization, ...

Embodiment 2

[0057] In the WC-Co matrix used in Example 2, the mass fraction of Co is 6%.

[0058] 1) Using Murakami reagent (K 3 [Fe(CN)] 6 : KOH: H 2 O=1:1:10 (volume ratio)) to alkali-etch the WC-Co substrate for 15 minutes, then ultrasonically clean it in absolute ethanol for 8 minutes, then ultrasonically clean it with deionized water for 3 minutes, and finally bake it in an oven for 2 minutes;

[0059] 2) Use v(HNO 3 ):v(H 2 O 2 )=30:70 solution to acid-etch the WC-Co substrate for 25s, then ultrasonically clean it in absolute ethanol for 8min, then ultrasonically clean it with deionized water for 3min, and finally place it in an oven for 2min baking;

[0060] 3) with Pt as cathode, WC-Co matrix as anode, placed in electrolyte, electrochemical corrosion was carried out for 3.5h under the electrolytic voltage of 1V, and the composition of the electrolyte was composed as follows: cobalt sulfate 2g / mol, boric acid 2g / mol, sodium chloride is 3g / mol, the pH of the electrolyte is 5,...

Embodiment 3

[0069] In the WC-Co matrix used in Example 3, the mass fraction of Co is 6%.

[0070] 1) Using Murakami reagent (K 3 [Fe(CN)] 6 : KOH: H 2 O=1:1:10 (volume ratio)) to alkali-etch the WC-Co substrate for 10 minutes, then ultrasonically clean it in absolute ethanol for 5 minutes, then ultrasonically clean it with deionized water for 1 minute, and finally bake it in an oven for 1 minute;

[0071] 2) Use H 2 SO 4 Solution (v(H 2 SO 4 ): v(H 2 O)=1:10) acid-etching the WC-Co substrate for 15s, then ultrasonically cleaned in absolute ethanol for 5min, then ultrasonically cleaned with deionized water for 1min, and finally placed in an oven to bake for 1min;

[0072] 3) Under the electrolysis voltage of 0.5V, the WC-Co matrix was deeply decobalt for 3h; the final decobalt depth was 300μm,

[0073] 4) Use diamond micro-nano composite powder with a particle size of 1 to 2 μm to dry sandblast the surface of the alloy substrate for 1 min, and the sand blasting pressure is 2×10 6 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a WC-Co substrate pretreatment process before CVD diamond coating, which comprises the following steps: carrying out alkali etching treatment on the WC-Co substrate, then performing acid etching treatment, and then adopting electrochemical corrosion treatment to obtain deep surface removal. Cobalt WC-Co matrix, and then use diamond micro-nano composite powder to carry out dry sandblasting on the deeply decobalted WC-Co matrix, and then use diamond micro-nano composite powder for wet sandblasting to obtain a blasted Sand-treated WC-Co substrate, and then the sand-blasted WC-Co substrate is placed in a suspension containing diamond powder to plant seed crystals, and finally heat-treated. The pretreatment process of the present invention effectively combines deep cobalt removal with sandblasting, enhances the cobalt removal efficiency and at the same time enhances the bonding force of the film base, and can effectively improve the wear resistance and service life of the coating.

Description

technical field [0001] The invention belongs to the technical field of hard alloy coatings, and in particular relates to a pretreatment process for a WC-Co substrate before CVD diamond coating. Background technique [0002] CVD diamond coating has a series of excellent properties, such as high hardness, high wear resistance, high elastic modulus, high chemical stability and so on. Deposition of diamond coating on WC-Co substrate can make the material have both the excellent properties of diamond and the weldability of cemented carbide. [0003] At present, there are still problems of poor bonding performance and short service life between the CVD diamond coating and the WC-Co matrix, so that the related products of the CVD diamond coating WC-Co matrix have not yet been applied in large-scale production. [0004] Due to the cobalt on the surface of the WC-Co substrate, on the one hand, it has an adverse effect on the adhesion performance of the coating, which is an important...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/27C23F1/16C23F1/32C23F17/00C23G1/02C23G1/14C25F3/02B24C1/10
CPCC23C16/0227C23C16/0254C23C16/0272C23C16/0209C23C16/27C25F3/02C23G1/02C23G1/14C23F1/16C23F1/32C23F17/00B24C1/10
Inventor 王立峰魏秋平李秋燕施应洁花腾宇王宝峰周科朝施帅施振施海平夏鑫余寒
Owner HU-NAN NEW FRONTIER SCI & TECH LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com