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Heterojunction solar cell and preparation method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of poor thermal stability, low optical band gap, easy diffusion of B atoms, etc., to increase thermal stability, ensure electrical conductivity, and achieve high doping effect of concentration

Pending Publication Date: 2021-07-13
TONGWEI SOLAR (ANHUI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the poor thermal stability of the P-type doped layer of heterojunction solar cells in the prior art, B atoms are easily diffused into the intrinsic layer of amorphous silicon, and the P-type doped layer formed by pure diborane gas doping has a low optical band gap , high-concentration diborane gas doping leads to the increase of defect state density and emitter recombination current density of boron-doped amorphous silicon and other technical problems of imperfect design of P-type doped layer

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  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0069] A heterojunction solar cell in this embodiment includes a base sheet, electrodes 6 arranged on the top surface and the bottom surface of the base sheet, and the base sheet includes:

[0070] Single crystal silicon substrate layer 1. The single crystal silicon substrate layer 1 in this embodiment is an N-type single crystal silicon substrate layer with a size of 156.75 mm and a thickness of 180 μm.

[0071] Two groups of intrinsic amorphous silicon layers, the two groups of intrinsic amorphous silicon layers include a first group of intrinsic amorphous silicon layers arranged on the top side of the single crystal silicon substrate layer 1 and a second group of intrinsic amorphous silicon layers arranged on the bottom side of the single crystal silicon substrate layer Two sets of intrinsic amorphous silicon layers.

[0072] The first group of intrinsic amorphous silicon layers includes the following three-layer structure arranged in sequence from the top side of the singl...

Embodiment 2

[0088]A high-efficiency silicon heterojunction solar cell of this embodiment is basically the same as that of Embodiment 1, except that:

[0089] The third intrinsic amorphous silicon layer 2-3, the third intrinsic amorphous silicon layer 2-3 is a stacked passivation layer deposited with silane and hydrogen gas, with a thickness of 6 nm.

[0090] In this embodiment, the third intrinsic amorphous silicon layer 2-3 includes the following three-layer structure arranged sequentially from the top side of the second intrinsic amorphous silicon layer 2-2 to the electrode direction:

[0091] The first passivation layer, the hydrogen and silane gas flow ratio of the first passivation layer is 3, the thickness is 1nm; the second passivation layer, the hydrogen and silane gas flow ratio of the second passivation layer is 5 , the thickness of which is 2nm; the third passivation layer, the flow ratio of hydrogen gas and silane gas of the third passivation layer is 10, and the thickness is ...

Embodiment 3

[0093] A heterojunction solar cell in this embodiment includes a base sheet, electrodes 6 arranged on the top surface and the bottom surface of the base sheet, and the base sheet includes:

[0094] Single crystal silicon substrate layer 1. The single crystal silicon substrate layer 1 in this embodiment is an N-type single crystal silicon substrate layer with a size of 156.75 mm and a thickness of 180 μm.

[0095] Two groups of intrinsic amorphous silicon layers, the two groups of intrinsic amorphous silicon layers include a first group of intrinsic amorphous silicon layers arranged on the top side of the single crystal silicon substrate layer 1 and a second group of intrinsic amorphous silicon layers arranged on the bottom side of the single crystal silicon substrate layer Two sets of intrinsic amorphous silicon layers.

[0096] The first group of intrinsic amorphous silicon layers includes the following three-layer structure arranged in sequence from the top side of the singl...

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Abstract

The invention belongs to the field of crystalline silicon solar cells, and relates to a heterojunction solar cell and a preparation method thereof. The method mainly solves the technical problems that in the prior art, due to the fact that the thermal stability of a P-type doping layer of a heterojunction solar cell is poor, B atoms are likely to diffuse and enter an amorphous silicon intrinsic layer and the optical forbidden band width of the P-type doping layer formed through doping of pure diborane gas is low, the defect state density of boron-doped amorphous silicon and the recombination current density of an emitting electrode are increased due to doping of high-concentration diborane gas, and the design of a P-type doping layer is imperfect. The scheme provides the heterojunction solar cell and the preparation method thereof. The method comprises the steps: designing P-type doped layer into a laminated structure which comprises a first P-type doped layer which is in contact with an intrinsic amorphous silicon layer and contains trimethyl boron gas deposition, and at least two layers of overall layered structures with gradually increased boron doping concentration deposited by trimethyl boron and diborane gas. The preparation steps are simple, the cost is low, and the obtained heterojunction solar cell is excellent in performance.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a heterojunction solar cell and a preparation method. Background technique [0002] Heterojunction cell, also known as HJT cell (Hetero-junction with Intrinsic Thin-layer), is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon film, characterized by low preparation process temperature, high conversion efficiency, Good high temperature characteristics. figure 1 It is a schematic diagram of the structure of HJT solar cell. It uses N-type monocrystalline silicon wafers as the substrate, and deposits an intrinsic amorphous silicon film (i-a-Si:H) with a thickness of 5-10nm on the front of the cleaned and textured N-type c-Si, and a P-type amorphous silicon film. crystal thin film (p-a-Si:H), thus forming a P-N heterojunction. An i-a-Si:H thin film and an N-type amorphous silicon thin film (n-a-Si:H) with a thickness of 5-10 nm are sequentially deposited on t...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0288H01L31/0376H01L31/075H01L31/20
CPCH01L31/0288H01L31/03529H01L31/03762H01L31/075H01L31/202Y02E10/548Y02P70/50
Inventor 薛建锋王金余义王永洁苏世杰
Owner TONGWEI SOLAR (ANHUI) CO LTD
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