Heterojunction solar cell and preparation method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of poor thermal stability, low optical band gap, easy diffusion of B atoms, etc., to increase thermal stability, ensure electrical conductivity, and achieve high doping effect of concentration

Pending Publication Date: 2021-07-13
TONGWEI SOLAR (ANHUI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the poor thermal stability of the P-type doped layer of heterojunction solar cells in the prior art, B atoms are easily diffused into the intrinsic layer of amorphous silicon, and the P-type doped layer formed by pure diborane gas doping ha

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  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0068] Example 1

[0069] A heterojunction solar cell of the present embodiment includes a matrix sheet, an electrode 6 disposed on the top surface of the substrate plate and the bottom surface, including:

[0070] The single crystal silicon substrate layer 1, the single crystal silicon substrate layer 1 of the present embodiment is an N-type single crystal silicon substrate layer, a size of 156.75 mm, and a thickness of 180 μm.

[0071] Two sets of intrinsic amorphous silicon layers, two groups of intrinsic amorphous silicon layers include a first set of intrinsic amorphous silicon layers disposed on the top of the single crystal silicon substrate layer 1 and a first portion of the bottom side of the single crystal silicon substrate. Two sets of intrinsic amorphous silicon layers.

[0072] The first set of intrinsic amorphous silicon layers include the following three-layer structure disposed in the direction of the electrode direction from the top side of the single crystal sili...

Example Embodiment

[0087] Example 2

[0088]A high-efficiency silicon heterojunction solar cell of this embodiment is substantially the same as in Example 1, there is different from:

[0089] Third, the amorphous silicon layer 2-3, which is a laminated passivation layer containing silicon and hydrogen gas deposition, and a thickness of 6 nm.

[0090] In this embodiment, the third intrinsic amorphous silicon layer 2-3 includes the following three-layer structure from the top side of the second emission amorphous silicon layer 2-2 to the electrode direction:

[0091] The first passivation layer, the hydrogen gas flow ratio of the first passivation layer is 3, the thickness is 1 nm; the second passivation layer, the hydrogen gas flow rate of the second passivation layer and the silane gas flow ratio is 5 The thickness is 2 nm; the third passivation layer, the hydrogen gas flow rate of the third passivation layer and the silane gas flow ratio is 10, and the thickness is 3 nm.

Example Embodiment

[0092] Example 3

[0093] A heterojunction solar cell of the present embodiment includes a matrix sheet, an electrode 6 disposed on the top surface of the substrate plate and the bottom surface, including:

[0094] The single crystal silicon substrate layer 1, the single crystal silicon substrate layer 1 of the present embodiment is an N-type single crystal silicon substrate layer, a size of 156.75 mm, and a thickness of 180 μm.

[0095] Two sets of intrinsic amorphous silicon layers, two groups of intrinsic amorphous silicon layers include a first set of intrinsic amorphous silicon layers disposed on the top of the single crystal silicon substrate layer 1 and a first portion of the bottom side of the single crystal silicon substrate. Two sets of intrinsic amorphous silicon layers.

[0096] The first set of intrinsic amorphous silicon layers include the following three-layer structure disposed in the direction of the electrode direction from the top side of the single crystal sili...

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Abstract

The invention belongs to the field of crystalline silicon solar cells, and relates to a heterojunction solar cell and a preparation method thereof. The method mainly solves the technical problems that in the prior art, due to the fact that the thermal stability of a P-type doping layer of a heterojunction solar cell is poor, B atoms are likely to diffuse and enter an amorphous silicon intrinsic layer and the optical forbidden band width of the P-type doping layer formed through doping of pure diborane gas is low, the defect state density of boron-doped amorphous silicon and the recombination current density of an emitting electrode are increased due to doping of high-concentration diborane gas, and the design of a P-type doping layer is imperfect. The scheme provides the heterojunction solar cell and the preparation method thereof. The method comprises the steps: designing P-type doped layer into a laminated structure which comprises a first P-type doped layer which is in contact with an intrinsic amorphous silicon layer and contains trimethyl boron gas deposition, and at least two layers of overall layered structures with gradually increased boron doping concentration deposited by trimethyl boron and diborane gas. The preparation steps are simple, the cost is low, and the obtained heterojunction solar cell is excellent in performance.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a heterojunction solar cell and a preparation method. Background technique [0002] Heterojunction cell, also known as HJT cell (Hetero-junction with Intrinsic Thin-layer), is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon film, characterized by low preparation process temperature, high conversion efficiency, Good high temperature characteristics. figure 1 It is a schematic diagram of the structure of HJT solar cell. It uses N-type monocrystalline silicon wafers as the substrate, and deposits an intrinsic amorphous silicon film (i-a-Si:H) with a thickness of 5-10nm on the front of the cleaned and textured N-type c-Si, and a P-type amorphous silicon film. crystal thin film (p-a-Si:H), thus forming a P-N heterojunction. An i-a-Si:H thin film and an N-type amorphous silicon thin film (n-a-Si:H) with a thickness of 5-10 nm are sequentially deposited on t...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0288H01L31/0376H01L31/075H01L31/20
CPCH01L31/0288H01L31/03529H01L31/03762H01L31/075H01L31/202Y02E10/548Y02P70/50
Inventor 薛建锋王金余义王永洁苏世杰
Owner TONGWEI SOLAR (ANHUI) CO LTD
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