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Film formation material for lithography, composition for forming film for lithography, underlayer film for lithography and pattern forming method

A lithography and compound technology, which is applied in photosensitive material processing, micro-lithography exposure equipment, and photosensitive materials used in photomechanical equipment, etc., can solve the problems of difficult to obtain film thickness, collapse of resolution resist patterns, etc., and achieve flatness excellent effect

Inactive Publication Date: 2021-07-23
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the resist pattern is miniaturized, there will be problems such as resolution problems and resist pattern collapse after development, so it is expected to reduce the thickness of the resist.
However, it is difficult to obtain a film thickness of a resist pattern sufficient for substrate processing only by thinning the resist

Method used

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  • Film formation material for lithography, composition for forming film for lithography, underlayer film for lithography and pattern forming method
  • Film formation material for lithography, composition for forming film for lithography, underlayer film for lithography and pattern forming method
  • Film formation material for lithography, composition for forming film for lithography, underlayer film for lithography and pattern forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0254] Hereinafter, the present invention will be described in more detail through synthesis examples, examples, and comparative examples, but the present invention is not limited by these examples.

[0255] [molecular weight]

[0256] The molecular weight of the synthesized compound was measured by LC-MS analysis using Acquity UPLC / MALDI-Synapt HDMS manufactured by Water Corporation.

[0257] [Evaluation of heat resistance]

[0258] Using the EXSTAR6000TG-DTA device manufactured by SIINanoTechology, about 5 mg of the sample was put into an aluminum non-sealed container, and the temperature was raised to 500°C at a heating rate of 10°C / min in a nitrogen (100ml / min) flow, thereby measuring the amount of thermogravimetric decrease. From a practical point of view, the following A or B evaluation is preferable. If it is evaluated as A or B, it has high heat resistance and can be applied to high-temperature baking.

[0259]

[0260] A: The thermogravimetric reduction at 400°C ...

Embodiment 2

[0318] Using 9 parts by mass of m-BAPP bismaleimide obtained in Synthesis Example 2 as a maleimide compound and 1 part by mass of a latent base generator (WPBG-300; manufactured by FUJIFILM Wako Pure Chemical Corporation), As a film-forming material for photolithography.

[0319] As a result of thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, the solubility to PGMEA / CHN mixed solvent was evaluated to be 10% by mass to less than 20% by mass (evaluation A), and it was evaluated that the obtained film-forming material for lithography had excellent solubility.

[0320] A film-forming composition for lithography was produced by the same operation as in Example 1 above.

Embodiment 3

[0322] 9 parts by mass of BMI maleimide oligomer (BMI-2300, produced by Daiwa Chemical Industry Co., Ltd.) represented by the following formula as a bismaleimide resin and a latent base generator (WPBG-300; FUJIFILM Wako Pure Chemical Corporation) 1 part by mass as a film-forming material for photolithography.

[0323]

[0324] (In the above formula, n is an integer of 0 to 4.)

[0325] (BMI-2300)

[0326] As a result of thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, the solubility to PGMEA / CHN mixed solvent was evaluated to be 10% by mass to less than 20% by mass (evaluation A), and it was evaluated that the obtained film-forming material for lithography had excellent solubility.

[0327] A film-forming composition for lithography was produced by the same operation as in Example 1 above.

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Abstract

The purpose of the present invention is to provide a film formation material for lithography and the like, which is applicable to wet processes, while being excellent in terms of heat resistance, planarity of a film formed therefrom on a substrate with level difference, solubility in a solvent, and long-term storage stability in a state of solution. The purpose is able to be achieved by a film formation material for lithography, which contains a compound having a group of formula (0A) and a latent curing accelerator. (In formula (0A), each of RA and RB independently represents a hydrogen atom or an alkyl group having 1-4 carbon atoms.).

Description

technical field [0001] The present invention relates to a film-forming material for lithography, a film-forming composition for lithography containing the material, an underlayer film for lithography formed using the composition, and a pattern forming method (such as a resist patterning method or circuit pattern method). Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using a photoresist material. In recent years, with the high integration and high speed of LSIs, further miniaturization by pattern rules is required. Furthermore, in photolithography using photoexposure, which is currently used as a general technique, the limit of resolution derived from the nature of the wavelength of the light source is approaching. [0003] The light source for lithography used in resist pattern formation has been shortened from KrF excimer laser light (248 nm) to ArF excimer laser light (193 nm). However, if th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/12G03F7/039G03F7/11G03F7/20G03F7/40H01L21/027
CPCC08G73/12G03F7/094G03F7/038C08G73/128C09D179/085G03F7/11G03F7/20G03F7/26C08K5/0025H01L21/0276H01L21/31144H01L21/32139G03F7/039H01L21/0274
Inventor 堀内淳矢牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC