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Method for preparing single-walled carbon nanotube by taking graphene as catalyst

A single-walled carbon nanotube and graphene technology, applied in carbon nanotubes, graphene, chemical instruments and methods, etc., can solve problems affecting device performance, metal residues, etc., and achieve the effect of simplifying the process

Active Publication Date: 2021-08-06
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for preparing single-walled carbon nanotubes using graphene as a catalyst, to solve the technical problem that metal catalysts will have metal residues in the growth of single-walled carbon nanotubes, which will affect the performance of subsequent devices

Method used

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  • Method for preparing single-walled carbon nanotube by taking graphene as catalyst
  • Method for preparing single-walled carbon nanotube by taking graphene as catalyst
  • Method for preparing single-walled carbon nanotube by taking graphene as catalyst

Examples

Experimental program
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Effect test

Embodiment 1

[0058] In SiO 2 / Si substrate with single-layer graphene as a catalyst to grow carbon nanotubes. see figure 1 shown.

[0059] The specific steps are:

[0060] Step 1, choose SiO 2 / Si substrate, cut it into a size of 6mm×6mm, and pretreat this substrate, the steps are as follows:

[0061] 1) Ultrasonic cleaning of the growth substrate in ultrapure water, acetone, ethanol, and ultrapure water in sequence;

[0062] 2), dry with high-purity nitrogen;

[0063] Step 2, in the SiO that has been processed 2 / Si growth substrate mechanically exfoliated graphene, the number of layers is one layer. (height map as Figure 3b )

[0064] Step 3, growing carbon nanotubes on the graphene substrate.

[0065] The growth substrate with single-layer graphene obtained in step 2 was placed in a chemical vapor deposition system, and the temperature was raised to a growth temperature of 830°C at a heating rate of 40°C / min under the protection of argon gas, and the flow rate of argon gas wa...

Embodiment 2

[0068] In SiO 2 / Si substrate with three-layer graphene as a catalyst to grow carbon nanotubes. refer to Figure 4 shown.

[0069] Step 1 is the same as Step 1 in Embodiment 1.

[0070] Step 2, in the SiO that has been processed 2 / Si growth substrate mechanically exfoliated graphene, the number of layers is three layers (height diagram as Figure 5b ). Specifically, 5a, 5b, and 5c are characterization diagrams of the growth results in Example 2, wherein Figure 5a is the AFM map, Figure 5b is the height curve of graphene, Figure 5c is the height curve of single-walled carbon nanotubes.

[0071] Step 3, growing carbon nanotubes on the graphene substrate.

[0072] The growth substrate with single-layer graphene obtained in step 2 was placed in a chemical vapor deposition system, and the temperature was raised to a growth temperature of 830°C at a heating rate of 40°C / min under the protection of argon gas, and the flow rate of argon gas was 300 sccm. Continue to pass...

Embodiment 3

[0074] Carbon nanotubes were grown on a ST-cut quartz substrate using single-layer graphene as a catalyst.

[0075] Step 1, select the ST-cut quartz substrate and pretreat it, and the processing of the growth substrate includes the following steps:

[0076] 1) Ultrasonic cleaning of the growth substrate in ultrapure water, acetone, ethanol, and ultrapure water in sequence;

[0077] 2), dry with high-purity nitrogen;

[0078] 3) Put the cleaned substrate into a muffle furnace, anneal at high temperature in air, raise the temperature to 900 °C for 2 h, keep the temperature at 900 °C for 8 h, then cool down to 300 °C for 10 h, and cool down naturally;

[0079] Step 2: Mechanically exfoliate graphene with different layers on the treated ST-cut quartz growth substrate, the number of layers is 1-10 layers.

[0080] Step 3, growing carbon nanotubes on the graphene substrate.

[0081] The growth substrate with single-layer graphene obtained in step 2 was placed in a chemical vapor ...

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Abstract

The invention discloses a method for preparing a single-walled carbon nanotube and an all-carbon heterojunction by taking graphene as a catalyst, which comprises the following steps: step 1, processing a growth substrate: s1, ultrasonically cleaning a growth substrate in ultra-pure water, acetone, ethanol and ultra-pure water in sequence; s2, blowing the growth substrate by high-purity nitrogen to dry the growth substrate; and s3, putting the cleaned substrate into a muffle furnace, performing high-temperature annealing in air, heating to 900 DEG C within 2 hours, keeping the temperature at 900 DEG C for 8 hours, cooling to 300 DEG C within 10 hours, and naturally cooling; step 2, mechanically stripping graphene on the treated growth substrate, wherein the number of layers is 1-10; step 3, growing a carbon nanotube on the substrate deposited with the graphene, and introducing hydrogen and a carbon source into a chemical vapor deposition system to grow a single-walled carbon nanotube; and 4, making the all-carbon heterojunction provided by the invention into a field effect transistor device according to the following preparation process. The single-walled carbon nanotube does not contain metal in the preparation process, and can be used for preparing a field effect transistor device with stable performance.

Description

technical field [0001] The invention relates to the field of preparation of single-wall carbon nanotubes, in particular to a method for preparing single-wall carbon nanotubes using graphene as a catalyst. Background technique [0002] Single-walled carbon nanotubes (SWNTs) are all composed of carbon atoms. The geometric structure can be regarded as a coiled single-layer graphene. The structure determines the properties. Therefore, SWNTs have excellent electronic, mechanical, and mechanical properties. At the same time, according to the curl structure, single-walled carbon nanotubes have three types: armchair type, zigzag type and chirality; according to the electronic structure, single-walled carbon nanotubes have semiconductor type and metal type (including metalloid type and metal type). [0003] SWNTs have great potential applications in electronics, optoelectronics, sensors, drug delivery, catalyst support, composite materials, etc. Theoretical and experimental studies ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/162C01B32/159C01B32/19
CPCC01B32/162C01B32/159C01B32/19C01B2204/04
Inventor 胡悦张红杰钱金杰黄少铭
Owner WENZHOU UNIVERSITY
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