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Self-intercalation vanadium-based two-dimensional nanosheet, preparation method and application thereof

A two-dimensional nanometer and nanosheet technology, applied in nanotechnology, chemical instruments and methods, vanadium compounds, etc., can solve the problems of high equipment requirements and increased cost, and achieve the effects of stable chemical properties, low cost and good crystallinity

Inactive Publication Date: 2021-09-07
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it is an important component of vanadium-based chalcogenides, little research has been done in recent years
At present, some self-intercalation materials have been grown by molecular beam epitaxy, but this method needs to be carried out under high vacuum conditions, which requires high equipment and increases costs

Method used

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  • Self-intercalation vanadium-based two-dimensional nanosheet, preparation method and application thereof
  • Self-intercalation vanadium-based two-dimensional nanosheet, preparation method and application thereof
  • Self-intercalation vanadium-based two-dimensional nanosheet, preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0038] This embodiment provides a V 8 (S 1-x Se x ) 15 Nano sheet, its preparation method specifically comprises the following steps:

[0039] 1) Put 0.1g V 2 o 5 The powder is placed in the quartz boat, and the clean sapphire substrate is buckled on the V 2 o 5 Put the powdered quartz boat on the downstream of the quartz tube of the dual-temperature zone tube furnace; mix 0.9g of S powder and 0.3g of Se powder evenly, place it in the quartz boat, and place it upstream of the quartz tube of the dual-temperature zone tube furnace;

[0040] 2) After cleaning the quartz tube repeatedly with argon, within 30 minutes, raise the temperature of the downstream furnace to 670°C and the temperature of the upstream furnace to 240°C, and keep the carrier gas Ar flow rate at 100 sccm, H 2 The flow rate is 10 sccm, and after 30 minutes of growth, it is naturally cooled to room temperature, and the V grown on the sapphire substrate is obtained. 8 (S 1-x Se x ) 15 Nanosheets.

Embodiment 2

[0042] This embodiment provides a V 8 (S 1-x Se x ) 15 Nano sheet, its preparation method specifically comprises the following steps:

[0043] 1) Put 0.1g V 2 o 5 The powder is placed in the quartz boat, and the clean sapphire substrate is buckled on the V 2 o 5 Put the powdered quartz boat on the downstream of the quartz tube of the dual-temperature zone tube furnace; mix 0.9g of S powder and 0.45g of Se powder evenly, place it in the quartz boat, and place it upstream of the quartz tube of the dual-temperature zone tube furnace;

[0044] 2) After cleaning the quartz tube repeatedly with argon, within 30 minutes, raise the temperature of the downstream furnace to 640°C and the temperature of the upstream furnace to 250°C. 2 The flow rate is 10 sccm, and after 30 minutes of growth, it is naturally cooled to room temperature, and the V 8 (S 1-x Se x ) 15 Nanosheets.

Embodiment 3

[0046] This embodiment provides a V 8 (S 1-x Se x ) 15 Nano sheet, its preparation method specifically comprises the following steps:

[0047] 1) Put 0.1g V 2 o 5 The powder is placed in the quartz boat, and the clean sapphire substrate is buckled on the V 2 o 5 Put the powdered quartz boat on the downstream of the quartz tube of the dual-temperature zone tube furnace; mix 0.9g of S powder and 0.9g of Se powder evenly, place it in the quartz boat, and place it upstream of the quartz tube of the dual-temperature zone tube furnace;

[0048] 2) After repeatedly cleaning the quartz tube with argon, within 30 minutes, raise the temperature of the downstream furnace to 650°C, and the temperature of the upstream furnace to 260°C, and keep the carrier gas Ar flow rate at 100 sccm, H 2 The flow rate is 10 sccm, and after 30 minutes of growth, it is naturally cooled to room temperature, and the V 8 (S 1-x Se x ) 15 Nanosheets.

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Abstract

The invention provides a self-intercalation vanadium-based two-dimensional nanosheet, a preparation method and application thereof. The preparation method comprises the steps that vanadium pentoxide, sulfur powder and selenium powder serve as raw materials, and a chemical vapor deposition reaction is conducted to prepare the self-intercalation vanadium-based octavanadium pentasulfide selenide nanosheet, wherein the mass ratio of the vanadium pentoxide to the sulfur powder to the selenium powder is 1: 9: 3-9. According to the invention, the preparation method is simple in process, high in reaction speed and low in cost, the prepared self-intercalation vanadium-based octavanadium pentasulfide selenide V8(S1-xSex)15 nanosheet is large in area, high in purity, good in crystallinity and stable in chemical property, and the prepared self-intercalation vanadium-based octavanadium pentasulfide selenide nanosheet can be applied to the aspects of field effect transistors or spinning electronic devices and the like.

Description

technical field [0001] The invention relates to the technical field of inorganic semiconductor materials, in particular to a self-intercalation vanadium-based two-dimensional nanosheet and a preparation method and application thereof. Background technique [0002] In recent years, two-dimensional materials have been extensively studied because of their excellent properties. As an important member of the two-dimensional family, magnetic materials have also been developed rapidly in the past few decades. However, early studies mainly focused on inducing local magnetic order in 2D nonmagnetic materials, but this local magnetic order is short-range ordered and easily destroyed by thermal fluctuations. Recently, it was experimentally demonstrated that the two-dimensional intrinsic Fe 3 GeTe 2 , Cr 2 Ge 2 Te 6 and CrI 3 The long-range ordered magnetic order in the material has stimulated research interest in exploring two-dimensional intrinsically magnetic materials. Vanad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G31/00H01L29/24B82Y40/00
CPCC01G31/006H01L29/24B82Y40/00C01P2004/20C01P2002/20C01P2004/02C01P2004/04C01P2004/03C01P2002/85C01P2002/82C01P2006/40
Inventor 王振兴姚雨雨何军
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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