Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-leakage SiC Schottky diode and manufacturing method thereof

A technology of Schottky diode and manufacturing method, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of large reverse blocking consumption, large reverse leakage current, reduced circuit efficiency, etc. The effect of reverse blocking loss, reducing leakage problems, improving reliability and yield

Pending Publication Date: 2021-09-17
XIAN MICROELECTRONICS TECH INST
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] SiC Schottky diodes have the characteristics of low conduction voltage, fast switching speed, and small reverse recovery current. However, compared with SiCPN junction diodes, SiC Schottky diodes have a larger reverse leakage current, and the edge of the Schottky contact electrode Leakage problems are prone to occur, and reverse blocking consumes a lot, reducing the efficiency of the circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-leakage SiC Schottky diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0044] Step 21: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, a silicon carbide epitaxial layer is formed on the epitaxial chip, and the epitaxial layer is coated with photoresist, and an inductively coupled plasma etching machine is used for the epitaxial layer. layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching manner, and the alignment mark is photoetched, C4 f 8 The flow rate during etching is 200sccm, SF 6 The flow rate during etching is 100sccm, the etching time is 60min, and the etching is completed to obtain a plate registration mark with an etching depth of 50nm;

[0045] Step 22, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposited thickness of the oxide layer is 1500nm;

[0046] Ste...

Embodiment 2

[0055] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0056] Step 31: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, form a silicon carbide epitaxial layer on the epitaxial chip, coat the epitaxial layer with photoresist, use an inductively coupled plasma etching machine, layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching method, and the alignment mark is photoetched, the etching time is 2min, C 4 f 8 The flow rate during etching is 2000sccm, SF 6 The flow rate during etching is 500 sccm, and the etching is completed to obtain a plate registration mark with an etching depth of 1 μm;

[0057] Step 32, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposition thickness of the oxide layer is 3000nm;

[0058] Step 33, performing photolithography on the s...

Embodiment 3

[0067] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0068] Step 41: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, form a silicon carbide epitaxial layer on the epitaxial chip, coat the epitaxial layer with photoresist, use an inductively coupled plasma etching machine, layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching method, and the alignment mark is photoetched, the etching time is 30min, C 4 f 8 The flow rate during etching is 1000sccm, SF 6 The flow rate during etching is 300sccm, and the etching depth is 500nm to obtain the plate alignment mark;

[0069] Step 42, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposition thickness of the oxide layer is 2000nm;

[0070] Step 43, performing photolithography on the surface of the oxide layer to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Deposition thicknessaaaaaaaaaa
Deposition thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a low-leakage SiC Schottky diode and a manufacturing method thereof, and aims to reduce the reverse leakage current of the SiC Schottky diode, reduce the reverse blocking loss and improve the circuit efficiency. The manufacturing method comprises the following steps: carrying out photoresist coating on a silicon carbide epitaxial layer on an N+ substrate on the front surface of a silicon carbide wafer, and photoetching a register mark; depositing an oxide layer on the surface of the silicon carbide epitaxial layer, forming a protection ring and a scribing channel through photoetching, carrying out P-type ion implantation in the protection ring and the scribing channel, and then carrying out high-temperature annealing; depositing field oxide layers in the protection ring and the scribing channel, and corroding and reserving the oxide layer of the scribing channel; annealing the back surface of the silicon carbide wafer to complete an ohmic contact electrode; annealing the front surface of the silicon carbide wafer to complete a Schottky contact electrode; depositing or coating a passivation layer on the front surface of the silicon carbide wafer to cover the contact edge of the Schottky contact electrode and the field oxide layer; and performing electrode metal evaporation on the back surface of the silicon carbide wafer to complete the manufacturing of the low-leakage silicon carbide Schottky diode.

Description

technical field [0001] The invention belongs to the technical field of power device manufacturing technology, and in particular relates to a low-leakage SiC Schottky diode and a manufacturing method thereof. Background technique [0002] As a representative of the emerging third-generation wide-bandgap semiconductor materials, SiC has a larger working bandgap, higher temperature, better radiation resistance, higher operating frequency, and larger It has many advantages such as critical breakdown field strength, high mechanical strength, stable chemical properties, and good heat dissipation performance. It is an ideal material for preparing high-voltage, high-frequency, high-power, and high-current "three highs and one large" power devices. [0003] SiC Schottky diodes have the characteristics of low conduction voltage, fast switching speed, and small reverse recovery current. However, compared with SiCPN junction diodes, SiC Schottky diodes have a large reverse leakage curre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/329H01L21/56H01L29/872
CPCH01L29/6606H01L21/56H01L29/872Y02P70/50
Inventor 侯斌李照王晨霞王忠芳杨晓文胡长青
Owner XIAN MICROELECTRONICS TECH INST
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com