Low-leakage SiC Schottky diode and manufacturing method thereof

A technology of Schottky diode and manufacturing method, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of large reverse blocking consumption, large reverse leakage current, reduced circuit efficiency, etc. The effect of reverse blocking loss, reducing leakage problems, improving reliability and yield

Pending Publication Date: 2021-09-17
XIAN MICROELECTRONICS TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] SiC Schottky diodes have the characteristics of low conduction voltage, fast switching speed, and small reverse recovery current. However, compared with SiCPN junction diodes, SiC Schottky diode

Method used

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  • Low-leakage SiC Schottky diode and manufacturing method thereof

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Embodiment 1

[0043] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0044] Step 21: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, a silicon carbide epitaxial layer is formed on the epitaxial chip, and the epitaxial layer is coated with photoresist, and an inductively coupled plasma etching machine is used for the epitaxial layer. layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching manner, and the alignment mark is photoetched, C4 f 8 The flow rate during etching is 200sccm, SF 6 The flow rate during etching is 100sccm, the etching time is 60min, and the etching is completed to obtain a plate registration mark with an etching depth of 50nm;

[0045] Step 22, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposited thickness of the oxide layer is 1500nm;

[0046] Ste...

Embodiment 2

[0055] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0056] Step 31: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, form a silicon carbide epitaxial layer on the epitaxial chip, coat the epitaxial layer with photoresist, use an inductively coupled plasma etching machine, layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching method, and the alignment mark is photoetched, the etching time is 2min, C 4 f 8 The flow rate during etching is 2000sccm, SF 6 The flow rate during etching is 500 sccm, and the etching is completed to obtain a plate registration mark with an etching depth of 1 μm;

[0057] Step 32, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposition thickness of the oxide layer is 3000nm;

[0058] Step 33, performing photolithography on the s...

Embodiment 3

[0067] This embodiment is prepared according to the manufacturing method of the low-leakage SiC Schottky diode provided by the present invention, including the following steps:

[0068] Step 41: Provide an epitaxial chip, the epitaxial chip is on the N+ substrate, form a silicon carbide epitaxial layer on the epitaxial chip, coat the epitaxial layer with photoresist, use an inductively coupled plasma etching machine, layer uses C 4 f 8 and SF 6 Etching is carried out in an alternate etching method, and the alignment mark is photoetched, the etching time is 30min, C 4 f 8 The flow rate during etching is 1000sccm, SF 6 The flow rate during etching is 300sccm, and the etching depth is 500nm to obtain the plate alignment mark;

[0069] Step 42, depositing SiO on the surface of the silicon carbide epitaxial layer 2 An oxide layer, wherein the deposition thickness of the oxide layer is 2000nm;

[0070] Step 43, performing photolithography on the surface of the oxide layer to ...

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Abstract

The invention provides a low-leakage SiC Schottky diode and a manufacturing method thereof, and aims to reduce the reverse leakage current of the SiC Schottky diode, reduce the reverse blocking loss and improve the circuit efficiency. The manufacturing method comprises the following steps: carrying out photoresist coating on a silicon carbide epitaxial layer on an N+ substrate on the front surface of a silicon carbide wafer, and photoetching a register mark; depositing an oxide layer on the surface of the silicon carbide epitaxial layer, forming a protection ring and a scribing channel through photoetching, carrying out P-type ion implantation in the protection ring and the scribing channel, and then carrying out high-temperature annealing; depositing field oxide layers in the protection ring and the scribing channel, and corroding and reserving the oxide layer of the scribing channel; annealing the back surface of the silicon carbide wafer to complete an ohmic contact electrode; annealing the front surface of the silicon carbide wafer to complete a Schottky contact electrode; depositing or coating a passivation layer on the front surface of the silicon carbide wafer to cover the contact edge of the Schottky contact electrode and the field oxide layer; and performing electrode metal evaporation on the back surface of the silicon carbide wafer to complete the manufacturing of the low-leakage silicon carbide Schottky diode.

Description

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Claims

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Application Information

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Owner XIAN MICROELECTRONICS TECH INST
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