Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of silicon carbide crystal, silicon carbide wafer, silicon carbide substrate and semiconductor device

A silicon carbide single crystal and silicon carbide technology is applied in the preparation of silicon carbide crystals, silicon carbide substrates and semiconductor devices, and silicon carbide wafers. Silicon crystal quality and other issues, to achieve the effect of reducing reaction temperature, improving quality and reducing process cost

Inactive Publication Date: 2021-10-01
广州爱思威科技股份有限公司
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Use HTCVD to grow silicon carbide, the silicon source is usually SiH 4 (tetrahydrogen silicon), the carbon source is generally C 3 h 8 (propane), due to the requirement of chemical reaction activation energy, SiH 4 It needs high temperature (above 2100°C) to have the activation energy for chemical reaction to occur. At this temperature, C as a carbon source 3 h 8 It is volatile. Even if SiC has been reacted, holes will be left on the surface of SiC due to the volatilization of carbon sources, causing defects and seriously affecting the quality of silicon carbide crystals. Using defective silicon carbide crystals to make high-power devices, High power devices are easily damaged by breakdown

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of silicon carbide crystal, silicon carbide wafer, silicon carbide substrate and semiconductor device
  • Preparation method of silicon carbide crystal, silicon carbide wafer, silicon carbide substrate and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] In order to improve the quality of silicon carbide crystals prepared by HTCVD, the present invention proposes a method for preparing silicon carbide crystals, and the figure shows an example of the method for preparing silicon carbide crystals provided by the present invention. refer to figure 1 As shown, in this embodiment, the preparation method of the silicon carbide crystal comprises the following steps:

[0035] Step S10, methyltrichlorosilane (CH 3 Cl 3 Si) and hydrogen (H 2 ) Reductive decomposition reaction is carried out in the first reaction chamber to generate silicon tetrahydride and ethane;

[0036] Use CH 3 Cl 3 Si is the raw material, and H 2 A reduction decomposition reaction occurs, and its reaction equation is as follows:

[0037] 2CH 3 Cl 3 Si+7H2→2SiH 4 ↑+6HCl↑+C 2 h 6 ↑

[0038] In the reductive decomposition reaction, CH 3 Cl 3 Si is the raw material, and H 2The reaction produces gas SiH 4 , HCl and C 2 h 6 , due to CH 3 Cl 3 S...

Embodiment 1

[0068] (1) to CH 3 Cl 3 Si is used as a raw material for dry passivation to remove the water vapor, and then the CH 3 Cl 3 Si and H 2 According to the molar ratio of 2:7, it is passed into the first reaction chamber, and the reduction and decomposition reaction is carried out under the conditions of 1000 ° C and 1.2 Pa to generate SiH 4 , HCl and C 2 h 6 ;

[0069] (2) SiH generated in step (1) 4 and C 2 h 6 (SiH 4 and C 2 h 6 The molar ratio is 2:1) into the second reaction chamber, and the reaction is carried out at 1550°C and 0.6Pa to generate SiC and H 2 ;

[0070] (3) The SiC generated in step (2) is in contact with the seed crystal set in the second reaction chamber, and under the conditions of 1550°C and 0.3Pa, it nucleates and grows at the seed crystal, and crystallizes to form silicon carbide single crystals and grow into silicon carbide crystals.

Embodiment 2

[0072] (1) to CH 3 Cl 3 Si is used as a raw material for dry passivation to remove the water vapor, and then the CH 3 Cl 3 Si and H 2 According to the molar ratio of 2:7, it is passed into the first reaction chamber, and the reduction and decomposition reaction is carried out under the conditions of 1100 ° C and 1.1 Pa to generate SiH4 , HCl and C 2 h 6 ;

[0073] (2) SiH generated in step (1) 4 and C 2 h 6 (SiH 4 and C 2 h 6 The molar ratio is 2:1) into the second reaction chamber, and the reaction is carried out at 1600°C and 0.5Pa to generate SiC and H 2 ;

[0074] (3) The SiC generated in step (2) is in contact with the seed crystal set in the second reaction chamber, and under the conditions of 1600°C and 0.5Pa, it nucleates and grows at the seed crystal, and crystallizes to form silicon carbide single crystals and grow into silicon carbide crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a silicon carbide crystal, a silicon carbide wafer, a silicon carbide substrate and a semiconductor device, and the preparation method of the silicon carbide crystal comprises the following steps: carrying out reductive decomposition reaction on methyl trichlorosilane and hydrogen in a first reaction cavity to generate tetrahydride and ethane; enabling the tetrahydride and the ethane to react in a second reaction cavity to generate silicon carbide single crystals; and nucleating, growing and crystallizing the silicon carbide single crystal at the seed crystal to form the silicon carbide single crystal and grow into the silicon carbide crystal. According to the method, the silicon carbide is grown and prepared by taking the methyl trichlorosilane as the raw material and adopting the HTCVD method, so that the reaction temperature in the preparation process of the silicon carbide is remarkably reduced, the problem that the quality of the silicon carbide is reduced due to carbon source volatilization is avoided, and the quality of the prepared silicon carbide crystal is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to the technical field of SiC semiconductors, and in particular to a method for preparing a silicon carbide crystal, a silicon carbide wafer, a silicon carbide substrate and a semiconductor device. Background technique [0002] Silicon carbide material (SiC) has many advantages: wide band gap, good thermal conductivity, high breakdown electric field, high electron saturation rate, good thermal stability, and strong chemical stability. SiC has a large band gap, which is suitable for the development of short-wave optoelectronic devices, which is conducive to the operation of SiC-based devices at high temperatures; high electron saturation rate, suitable for the manufacture of high-frequency devices; high breakdown electric field, which is conducive to the manufacture of high-power devices; chemical stability Strong, the device can work in a corrosive environment. Therefore, hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B25/20C30B25/02
CPCC30B29/36C30B25/02
Inventor 林大野王治中蔡钦铭
Owner 广州爱思威科技股份有限公司