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Process method for improving performance of Schottky diode with groove MOS structure

A Schottky diode and MOS structure technology, applied in the mechanical field, can solve the problems of hidden dangers of use reliability and reduced device performance, and achieve the effects of reducing difficulty, reducing charge density, and improving reverse breakdown voltage and stability.

Active Publication Date: 2021-10-19
江苏新顺微电子股份有限公司
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  • Abstract
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Problems solved by technology

This drift voltage brings certain hidden dangers to the reliability of the product. In order to ensure that the minimum breakdown voltage meets the requirements, it is necessary to increase the breakdown value to ensure sufficient redundancy, which also reduces the performance of the device to a certain extent.

Method used

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  • Process method for improving performance of Schottky diode with groove MOS structure
  • Process method for improving performance of Schottky diode with groove MOS structure
  • Process method for improving performance of Schottky diode with groove MOS structure

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specific Embodiment 1

[0046] Specific embodiment 1, see Figure 2 to Figure 7 , a process method for improving the performance of a trench MOS structure Schottky diode. The oxide dielectric layer (oxygen-doped polysilicon layer 2, silicon nitride layer 3 and undoped polysilicon layer) required in the trench MOS structure is thermally oxidized and grown The silicon dioxide layer three) total thickness in Taking the left and right products as an example, the method includes the following steps:

[0047] Step 1: Take the silicon substrate 1 that has undergone groove etching, the depth of the groove is 2.5 μm-4.5 μm, and use hydrofluoric acid etching solution wet process to remove the silicon dioxide on the front side of the silicon substrate as a mask layer for silicon groove etching. silicon. See figure 1 .

[0048] Step 2: Deposit and grow a thin layer of oxygen-doped polysilicon layer 2 on the aforementioned silicon substrate 1 by LPCVD process; during the process of film deposition, the chamb...

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Abstract

The invention relates to the field of semiconductors. The invention relates to a process method for improving the performance of a Schottky diode with a groove MOS structure, which comprises the following steps of 1, taking a silicon substrate with a groove etched, and removing a silicon dioxide layer and other dielectric layers on the silicon surface of the front surface of the silicon substrate by a wet process, 2, depositing and growing a thin oxygen-doped polycrystalline silicon layer by adopting an LPCVD process, 3, depositing a thin silicon nitride layer by adopting an LPCVD process, 4, depositing an undoped polycrystalline silicon layer by adopting an LPCVD process, 5, oxidizing the deposited polycrystalline silicon layer by adopting a furnace tube thermal oxidation process, and reacting to form silicon dioxide, and 6, depositing in-situ doped polycrystalline silicon by adopting a CVD process, and finally obtaining the silicon groove MOS structure required by the device. The thickness uniformity of the dielectric layer is improved, defects generated in the growth process of the dielectric layer are reduced, the charge density in the dielectric layer is reduced, and the device performance is improved.

Description

technical field [0001] The invention relates to the mechanical field, in particular to a method for manufacturing a diode device. Background technique [0002] Silicon trench MOS structure Schottky diode is a new type of low power consumption Schottky diode silicon rectifier device. Compared with ordinary planar process Schottky diodes, it adopts silicon trench MOS structure, which reduces the forward voltage. The power consumption of the device can be reduced. The reason why the silicon trench MOS structure Schottky diode can obtain a lower forward voltage drop is that the expansion of the depletion layer on the semiconductor side of the silicon trench MOS structure realizes the electric field shielding of the Schottky junction and improves the The reverse breakdown voltage of the Schottky junction also reduces the reverse leakage of the Schottky junction; at the same time, the oxide dielectric layer in the silicon trench MOS structure has a voltage divider for the reverse...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/28H01L29/872
CPCH01L29/66143H01L21/28229H01L21/28194H01L29/8725
Inventor 陈晓伦许柏松韩笑孟军朱涛
Owner 江苏新顺微电子股份有限公司
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