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A kind of rare earth metal salt ceramic composite coating and its preparation method and application

A ceramic composite, rare earth metal technology, applied in metal material coating process, coating, discharge tube and other directions, can solve the problems of limited plasma etching resistance and low service life, and achieve no birefringence effect, long service life, The effect of homogeneous structure and composition

Active Publication Date: 2022-08-02
CHONGQING GENORI IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nevertheless, under high-power plasma attack, Y 2 o 3 Coating has limited plasma etch resistance and low service life

Method used

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  • A kind of rare earth metal salt ceramic composite coating and its preparation method and application
  • A kind of rare earth metal salt ceramic composite coating and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The aluminum substrate was cleaned and dried, and then the surface of the substrate was sandblasted under the conditions of a sandblasting pressure of 0.2Mpa and a sandblasting height of 400mm to obtain a substrate with a surface roughness Ra of 4μm. The sandblasted substrate is sprayed. Take Y with a particle size of 300-600nm in a mass ratio of 60:15:25 2 O 3 , Al 2 O 3 and SiO 2 powder, mixed and calcined at 1500°C for 2 hours to obtain Y 2 SiO 5 and Y 3 Al 5 O 12 of the mixed powder, prepared in the mixed powder of Y 2 SiO 5 and Y 3 Al 5 O 12 The particle size is 15-65μm. Argon and helium are used as plasma gases, argon is the main gas, and helium is the secondary gas. The flow rate of argon gas is 60L / min, the flow rate of helium gas is 20L / min, and the voltage is 30V and the current is 800A. Under the condition of powder feeding speed of 40g / min, plasma spray was carried out at a distance of 120mm from the surface of the substrate to obtain a compos...

Embodiment 2

[0034] The aluminum substrate was cleaned and dried, and then the surface of the substrate was sandblasted under the conditions of a sandblasting pressure of 0.3Mpa and a sandblasting height of 400mm to obtain a substrate with a surface roughness Ra of 6μm. The sandblasted substrate is sprayed. Take Y with a particle size of 300-600nm in a mass ratio of 65:15:20 2 O 3 , Al 2 O 3 and SiO 2 powder, mixed and calcined at 1500°C for 2 hours to obtain Y 2 SiO 5 and Y 3 Al 5 O 12 of the mixed powder, prepared in the mixed powder of Y 2 SiO 5 and Y 3 Al 5 O 12 The particle size is 15-65μm. Argon and hydrogen are used as plasma gases, argon is the main gas, and hydrogen is the secondary gas. The flow rate of hydrogen is 90L / min, and the flow rate of hydrogen is 10L / min. Under the conditions of a voltage of 40V and a current of 860A, the The powder feeding speed of 20g / min was carried out by plasma spraying at a distance of 150mm from the surface of the substrate to obta...

Embodiment 3

[0036] The aluminum substrate was cleaned and dried, and then the surface of the substrate was sandblasted under the conditions of a sandblasting pressure of 0.3Mpa and a sandblasting height of 350mm to obtain a substrate with a surface roughness Ra of 10μm. The sandblasted substrate is sprayed. Take Y with a particle size of 300-600nm in a mass ratio of 70:10:20 2 O 3 , Al 2 O 3 and SiO 2 powder, mixed and calcined at 1500°C for 3 hours to obtain Y 2 SiO 5 and Y 3 Al 5 O 12 of the mixed powder, prepared in the mixed powder of Y 2 SiO 5 and Y 3 Al 5 O 12 The particle size is 15-65μm. Argon and hydrogen are used as plasma gases, argon is the main gas, and hydrogen is the secondary gas. The flow rate of hydrogen is 60L / min, and the flow rate of hydrogen is 20L / min. Under the condition of voltage of 50V and current of 840A, The powder feeding speed of 30g / min was carried out by plasma spraying at a distance of 140mm from the surface of the substrate to obtain a com...

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Abstract

The invention relates to a rare earth metal salt ceramic composite coating, a preparation method and application thereof, and belongs to the technical field of plasma spraying. put Y 2 O 3 , Al 2 O 3 and SiO 2 Powder, Mix, Prepare Y 2 SiO 5 and Y 3 Al 5 O 12 The mixed powder of the mixed powder was plasma sprayed on the surface of the pretreated substrate to obtain Y 2 SiO 5 ‑Y 3 Al 5 O 12 Composite coating. Y in composite coating 2 SiO 5 Amorphous Y 2 SiO 5 Structure with a mass fraction of 60‑75%, Y 3 Al 5 O 12 For the cubic crystal structure. Amorphous Y 2 SiO 5 As an amorphous material, it is more uniform in structure and composition, and the cubic crystal structure of Y 3 Al 5 O 12 Excellent corrosion resistance. Y 2 SiO 5 ‑Y 3 Al 5 O 12 The composite coating incorporates amorphous Y 2 SiO 5 and Y 3 Al 5 O 12 The advantages are better plasma etching resistance and longer service life.

Description

technical field [0001] The invention belongs to the technical field of plasma spraying, and relates to a rare earth metal salt ceramic composite coating and a preparation method and application thereof. Background technique [0002] With the reduction in the size of semiconductor devices and the increase in the size of liquid crystal displays (LCDs) and silicon wafers (from 200mm to 300mm), plasma etching has gradually become a widely used micron-scale semiconductor device manufacturing process and microelectronics manufacturing process. The applied etching technique. Plasma etching refers to the use of glow discharge to generate plasma containing charged particles such as plasma and electrons, as well as highly chemically active neutral atoms, molecules and free radicals. These active particles diffuse to the site to be etched and are etched. The material reacts to form volatile products that are removed, thereby completing the pattern transfer etching technology, which is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/10C23C4/134C23C4/02H01J37/32
CPCC23C4/10C23C4/134C23C4/02H01J37/32477
Inventor 梁福坤陈立航余宜璠贺邦杰杨佐东
Owner CHONGQING GENORI IND CO LTD
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