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A method for preparing indium phosphide polycrystalline from indium phosphide tailings

A technology of indium phosphide and indium tailings, which is applied in the field of compound semiconductor materials, can solve the problems of increasing the cost of waste water treatment, low recovery rate, waste of resources, etc., to reduce the generation of rich indium, low recovery rate, and avoid waste Effect

Active Publication Date: 2022-06-28
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The recovery rate of these treatment methods is low, resulting in a waste of resources, and also increases the cost of treating waste water and waste residues

Method used

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  • A method for preparing indium phosphide polycrystalline from indium phosphide tailings
  • A method for preparing indium phosphide polycrystalline from indium phosphide tailings

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for preparing indium phosphide polycrystals from indium phosphide tails, and the schematic structural diagram of the preparation device is as follows: figure 1 shown, including the following steps:

[0033] Select a batch of non-doped indium phosphide tailings, polish them with 400-grit sandpaper, soak them in a mixture of nitric acid, hydrofluoric acid, and deionized water (volume ratio 1:1:9) for 4 hours, and then put them into an ultrasonic device. Ultrasonic treatment for 30 minutes, then rinsed with deionized water for 20 minutes, dehydrated with analytical ethanol, placed in an oven, and dried at 70 °C for 3 hours for use. Sampling was sent to detect the content of components and impurity elements. The analysis results are shown in Table 1.

[0034] Weigh 4000g of washed and dried non-indium phosphide tailings, crush them into 5-20mm particles with a zirconium hammer, and place them in a clean quartz boat for later use.

[0035] According to the composi...

Embodiment 2

[0042] A method for preparing indium phosphide polycrystals from indium phosphide tails, and the schematic structural diagram of the preparation device is as follows: figure 1 shown, including the following steps:

[0043] Pick a batch of iron-doped indium phosphide tailings, polish them with 600-grit sandpaper, soak them in a mixture of nitric acid, hydrofluoric acid, and deionized water (volume ratio 1:1:9) for 6 hours, and then put them into an ultrasonic device. Ultrasonic treatment for 40 minutes, then rinsed with deionized water for 20 minutes, dehydrated with analytical ethanol, placed in an oven, and dried at 80°C for 4 hours for use. Sampling was sent to detect the content of components and impurity elements. The analysis results are shown in Table 1.

[0044] Weigh 4500g of iron-doped indium phosphide tailings that have been cleaned and dried for use, crushed into 5-20mm particles with a zirconium hammer, and placed in a clean quartz boat for use.

[0045] Accordin...

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Abstract

The invention discloses a method for preparing polycrystalline indium phosphide from indium phosphide tailings, which comprises: respectively placing the indium phosphide tailings and excess red phosphorus at both ends of a vacuum-sealed quartz tube, and then placing them in a heater, The heater is placed in the pressure vessel, and the temperature of the indium phosphide tailing area is higher than that of the red phosphorus area in the subsequent heating process; the heating ensures that the temperature in the indium phosphide tailing area reaches the melting point of indium phosphide before the temperature in the quartz tube The pressure reaches the dissociation pressure of indium phosphide; after the pressure in the quartz tube reaches the dissociation pressure of indium phosphide, the temperature of the indium phosphide area is raised to 1100-1300°C for heat preservation; The indium phosphide is directional solidified to obtain the indium phosphide polycrystalline material. The method can not only obtain indium phosphide polycrystalline with high yield rate, but also can improve the utilization rate of indium phosphide waste, simplify the process, reduce production cost, avoid resource waste caused in the process of recycling indium and phosphorus, and reduce the generation of waste water and waste residue ,protect environment.

Description

technical field [0001] The invention belongs to the field of compound semiconductor materials, in particular to a method for preparing indium phosphide polycrystals from indium phosphide tails. Background technique [0002] As an important semiconductor material, indium phosphide (InP) has higher electro-optical conversion efficiency, electron mobility, operating temperature, and strong radiation resistance than silicon and gallium arsenide materials, and has high development value. It has a wide range of applications in both civilian and military fields. Indium phosphide (InP) is mainly used in fields such as terahertz, lasers, solar cells, photodetectors and optical fiber network systems. With the commercialization of 5G networks, the market demand for InP substrate materials will grow rapidly. The main demand market for indium phosphide comes from the optical communication market, accounting for about 82% of the total market demand, and due to the development of the glob...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B28/06
CPCC30B29/40C30B28/06
Inventor 陈伟杰白平平周铁军危严林嘉威齐正阳
Owner 广东先导微电子科技有限公司