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Preparation method of CsPbBr3 perovskite solar cell

A solar cell and perovskite technology, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of difficult high-quality thin film materials, cumbersome preparation methods, narrow line width, etc., and achieve high photoelectric conversion efficiency, The effect of broad application prospects and high preparation efficiency

Active Publication Date: 2022-01-18
HUANENG NEW ENERGY CO LTD +1
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Problems solved by technology

[0003] At present, the development status of perovskite solar cells is good, among which CsPbBr 3 Perovskite solar cells have attracted more and more attention from academia and industry because of their extremely high fluorescence quantum efficiency (up to 90%), adjustable fluorescence wavelength, covering the entire visible light band, and narrow line width; but now CsPbBr 3 During the preparation of perovskite solar cells, the transport layer and CsPbBr 3 The preparation process of the perovskite layer requires high-temperature heating alone, which consumes a lot of energy, which in turn causes waste of energy and makes the energy recovery cycle of the entire component longer; more importantly, CsPbBr 3 Usually requires two-step to multi-step preparation, the preparation method is cumbersome, it is difficult to form high-quality thin film materials, and it is not conducive to large-scale industrial production

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  • Preparation method of CsPbBr3 perovskite solar cell
  • Preparation method of CsPbBr3 perovskite solar cell

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preparation example Construction

[0027] The invention provides a CsPbBr 3 A method for preparing a perovskite solar cell, comprising the following steps:

[0028] a) The semiconductor material layer, CsPbBr are sequentially formed on the surface of FTO prepared in situ 3 Perovskite layer, carrier transport layer and metal electrode, resulting in CsPbBr 3 Perovskite solar cells;

[0029] The residual temperature of the FTO prepared in situ is 450°C to 650°C.

[0030] In the present invention, the preparation method of the FTO prepared in situ is preferably specifically:

[0031] Insert the multi-channel coating device in the narrow section of the tin tank of the float glass production line, and use the monobutyltin trichloride (C) with a purity of 95wt%.4 h 9 SnCl 3 , MBTC) as precursor, 99wt% trifluoroacetic acid (CF 3 COOH, TFA) as the dopant, with air and water as the reaction oxidant and catalyst for coating; MBTC with a mole fraction of 1-2%, TFA with 0.5-1%, water with 4-6% and N 2 It is the carri...

Embodiment 1

[0067] (1) adopt the following method for preparing FTO in situ: insert the multi-channel coating device in the narrow section of the tin bath of the float glass production line, with the monobutyl tin trichloride (C of 95wt%) with purity 4 h 9 SnCl 3 , MBTC) as precursor, 99wt% trifluoroacetic acid (CF 3 COOH, TFA) as the dopant, with air and water as the reaction oxidant and catalyst for coating; MBTC with a mole fraction of 1.6%, 0.88% of TFA, 4.8% of water and N 2 It is the carrier gas, which is vaporized at 175°C after entering the evaporator; after vaporization, enters the gas mixing chamber to mix and spray on the surface of the glass at a temperature of 675°C through the film coater, the mixed gas reacts at the gas-solid interface, and deposits to form a dense FTO solid film; the residual temperature of the FTO prepared in situ is 550°C.

[0068] (2) After the residual temperature of FTO prepared in situ drops to 350°C, spray SnCl 2 Aqueous solution (concentration ...

Embodiment 2

[0073] (1) adopt the following method for preparing FTO in situ: insert the multi-channel coating device in the narrow section of the tin bath of the float glass production line, with the monobutyl tin trichloride (C of 95wt%) with purity 4 h 9 SnCl 3 , MBTC) as precursor, 99wt% trifluoroacetic acid (CF 3 COOH, TFA) as the dopant, with air and water as the reaction oxidant and catalyst for coating; MBTC with a mole fraction of 1.6%, 0.88% of TFA, 4.8% of water and N 2 It is the carrier gas, which is vaporized at 175°C after entering the evaporator; after vaporization, enters the gas mixing chamber to mix and spray on the surface of the glass at a temperature of 675°C through the film coater, the mixed gas reacts at the gas-solid interface, and deposits to form a dense FTO solid film; the residual temperature of the FTO prepared in situ is 550°C.

[0074] (2) After the residual temperature of FTO prepared in situ drops to 350°C, spray NiNO 3 ·6H 2 Aqueous solution of O (co...

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Abstract

The invention provides a preparation method of a CsPbBr3 perovskite solar cell, which comprises the following steps of: a) sequentially forming a semiconductor material layer, a CsPbBr3 perovskite layer, a carrier transport layer and a metal electrode on the surface of FTO prepared in situ to obtain the CsPbBr3 perovskite solar cell, wherein the residual temperature of the FTO prepared in situ is 450 DEG C to 650 DEG C. Compared with the prior art, the preparation method does not need to additionally provide an external heat source in the preparation process, energy consumption is saved, meanwhile, the CsPbBr3 can be prepared into the high-quality thin film through one-step preparation, the process is simple, and the preparation efficiency is high; and the prepared CsPbBr3 perovskite solar cell is high in photoelectric conversion efficiency. Experimental results show that the photoelectric conversion efficiency of the CsPbBr3 perovskite solar cell obtained by the preparation method provided by the invention on an effective area of 5cm < 2 > is more than 6%.

Description

technical field [0001] The present invention relates to the technical field of perovskite solar cells, more specifically, relates to a CsPbBr 3 Preparation method of perovskite solar cells. Background technique [0002] Perovskite solar cells (perovskite solar cells) are solar cells that use perovskite-type organic metal halide semiconductors as light-absorbing materials. They belong to the third generation of solar cells and are also called new concept solar cells. When exposed to sunlight, the perovskite layer first absorbs photons to generate electron-hole pairs; due to the difference in the binding energy of excitons in perovskite materials, these carriers either become free carriers or form excitons, and, Because these perovskite materials tend to have lower carrier recombination probability and higher carrier mobility, the diffusion distance and lifetime of carriers are longer; then, these unrecombined electrons and holes are respectively The electron transport layer...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/15H10K30/00Y02P70/50
Inventor 李卫东刘家梁肖平赵志国王力军徐越秦校军李梦洁熊继光刘入维申建汛梁思超王森
Owner HUANENG NEW ENERGY CO LTD
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