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Laser diode

A laser diode and waveguide layer technology, which is applied in the field of laser diodes, can solve problems affecting the stability of indium gallium nitride waveguide layers, etc., and achieve the effects of improving photon confinement capabilities, improving stability, and increasing change rates

Pending Publication Date: 2022-02-01
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Claims
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Problems solved by technology

[0003] In traditional GaN-based blue-green lasers, the InGaN waveguide layer can be used to confine the optical field. Due to the large difference in the lattice between InGaN and GaN, the InGaN waveguide layer Interfacial defects are prone to form at the interface with the GaN layer, and these interface defects will affect the stability of the InGaN waveguide layer

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Embodiment Construction

[0046] The implementation of the present application is described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or operated through other different specific implementation modes, and the details in the present application can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.

[0047] The composition of each layer contained in this application can be analyzed by any suitable means, such as secondary ion mass spectrometry (SIMS); the thickness of each layer can be analyzed by any suitable means, such as transmission electron microscopy (TEM) or scanning Electron Microscopy (SEM) for coordinating, for example, the depth position of each layer on a SIMS map.

[0048] According to one aspect of the...

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Abstract

The invention discloses a laser diode. The laser diode comprises an n-type layer, a p-type layer and an active layer located between the n-type layer and the p-type layer; a first waveguide layer is arranged between the n-type layer and the active layer; the first waveguide layer comprises an aluminum-indium-gallium-nitrogen quaternary alloy, and the concentration of aluminum in the first waveguide layer is 1 * 10 < 16 > cm <-3 > to 3 * 10 < 16 > cm <-3 >, or 3 * 10 < 16 > cm <-3 > to 5 * 10 < 17 > cm <-3 >, or 5 * 10 < 17 > cm <-3 > to 1 * 10 < 18 > cm <-3 >. Compared with indium, aluminum has a smaller lattice constant; with a trace amount of an aluminum component added into the first waveguide layer, the lattice constant of the first waveguide layer can be effectively reduced, so that the first waveguide layer is matched with the n-type layer, an interface defect formed by lattice difference at the interface of the first waveguide layer and the n-type layer is eliminated, and the stability of the first waveguide layer is improved.

Description

technical field [0001] The present application relates to the technical field related to semiconductors, in particular to a laser diode. Background technique [0002] Group III nitride represented by gallium nitride is a direct transition wide bandgap semiconductor material with a wide energy band, and is an ideal material for making lasers from the ultraviolet to the green band. Gallium nitride-based blue-green lasers have the advantages of small size, high integration, high brightness, and high resolution. The distribution of light field and photon confinement are the key factors affecting the performance of gallium nitride-based blue-green lasers. [0003] In traditional GaN-based blue-green lasers, the InGaN waveguide layer can be used to confine the optical field. Due to the large difference in the lattice between InGaN and GaN, the InGaN waveguide layer Interface defects are easily formed at the interface with the gallium nitride layer, and these interface defects wil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/20H01S5/30
CPCH01S5/20H01S5/3013
Inventor 王俞授沈圻
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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