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Fluorescent body, method for manufacturing same, and light-emitting device using same

A light-emitting device and phosphor technology, applied in the field of phosphors, can solve the problems of easy reduction of the brightness of phosphors and the like

Pending Publication Date: 2022-02-08
NAT INST FOR MATERIALS SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as a result of the phosphor being exposed to the excitation source as described above, the brightness of the phosphor tends to decrease, and a phosphor that does not decrease in brightness has been sought.

Method used

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  • Fluorescent body, method for manufacturing same, and light-emitting device using same
  • Fluorescent body, method for manufacturing same, and light-emitting device using same
  • Fluorescent body, method for manufacturing same, and light-emitting device using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0154] [Example 1: Phosphor]

[0155] Next, synthesized with Ba 26 Si 51 o 2 N 84 Phosphors for host crystals. The raw material powder used has a specific surface area of ​​11.2m 2 Silicon nitride powder (SN-E10 grade manufactured by Ube Industries, Ltd.), silicon dioxide powder (SiO 2 ; manufactured by High Purity Chemical Research Institute), the purity of 99.7% of barium nitride (Ba 3 N 2 ; manufactured by Materion) and europium nitride (EuN; a product obtained by nitriding metal europium by heating it in an ammonia stream at 800° C. for 10 hours).

[0156] Design barium nitride (Ba 3 N 2 ), silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), the mixed composition of europium nitride (EuN) makes it (Ba, Eu) 26 Si 51 o 2 N 84 composition. The ratio of Ba to Eu is Eu / (Ba+Eu)=0.005. Weigh the raw powder to reach Ba 3 N 2 : 8.627, EuN: 0.130, Si 3 N 4 : 16.667, SiO 2 : 1 molar ratio, in a glove box with an oxygen content of 1 ppm in a nitrogen atmosphere...

Embodiment 2～8

[0164] [Examples 2 to 8: Phosphor]

[0165] Using the same raw material powders as in Example 1, they were mixed with the composition shown in Table 2, and (Ba, Eu) were synthesized according to the same production method as in Example 1. 26 Si 51 (O, N) 86 Phosphor. Crystal grains were collected from the composite, and the crystalline phase was determined using a single crystal X-ray diffraction device. The results were confirmed to be the same as Ba shown in Table 1. 26 Si 51 o 2 N 84 same crystal structure. The emission spectrum was measured by microspectrometry while irradiating the particles with light of 360 nm. As shown in Table 2, the luminescence peak wavelength is red light to near infrared light.

[0166]

Embodiment 9～20

[0167] [Examples 9 to 20: Phosphor]

[0168] Using the same raw material powder as in Example 1, mixed with the composition shown in Table 3, and synthesized (A, M) according to the same production method as in Example 1 26 (D, E) 51 x 86 Phosphor. The composition of Table 3 sometimes deviates from (A, M) 26 (D, E) 51 x 86 , in which case a mixture of the same crystals with other phases is formed. Crystal grains were collected from the product, and the crystal phase was determined using a single crystal X-ray diffraction device. As a result, it was confirmed that Ba 26 Si 51 o 2 N 84 substances of the same crystal structure. While irradiating the particles with light of 360 nm, the emission spectrum was measured by microspectrometry. As shown in Table 3, the luminescence peak wavelength is red light to near infrared light.

[0169]

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PUM

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Abstract

The present invention can provide: a novel fluorescent body having novel light-emission characteristics different from those of a conventional nitride fluorescent body or a conventional oxynitride fluorescent body; a method for manufacturing the same; and a light-emitting device using the same. According to an embodiment of the present invention, the fluorescent body contains at least element A, element D, and element X (where A represents at least one element selected from the group consisting of Mg, Ca, Sr, and Ba, D represents Si element, and X represents at least one element selected from the group consisting of O, N, and F), and optionally contains, as necessary, an inorganic substance that further contains, in a crystal represented by A26(D,E)51X86 containing element E (where E represents at least one element selected from the group consisting of B, Al, Ga, and In), element M (where M represents at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb). The fluorescent body optionally has a maximum value of a light-emission peak in a wavelength in a range of 630-850 nm when being irradiated with an excitation source.

Description

technical field [0001] The present disclosure relates to a 26 Si 51 o 2 N 84 (hereinafter referred to as the present crystal) and a crystal having the same crystal structure (hereinafter referred to as the present same crystal) are host crystal phosphors, their production methods, and uses thereof. Background technique [0002] Phosphors are used in fluorescent display tubes (VFD (Vacuum-Fluorescent Display: vacuum fluorescent display)), field emission displays (FED (Field Emission Display) or SED (Surface-Conduction Electron-Emitter Display: surface conduction electron emission display)) , PDP (Plasma Display Panel)), cathode ray tube (CRT (Cathode-Ray Tube)), liquid crystal display backlight (Liquid-Crystal Display Backlight), white light-emitting diode (LED (Light-Emitting Diode)), etc. . In these applications, in order to make the phosphor emit light, it is necessary to supply the phosphor with energy for exciting the phosphor, and the phosphor emits blue light unde...

Claims

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Application Information

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IPC IPC(8): C09K11/08C09K11/59C09K11/61C09K11/62C09K11/63C09K11/64H01L33/50
CPCH01L33/502C09K11/77347C09K11/77348C09K11/592H01L24/45H01L24/48H01L33/30H01L33/32H01L33/504H01L33/62H01L2224/45144H01L2224/48225H01L2224/48245C01F7/16C01F7/54C01F11/22
Inventor 广崎尚登武田隆史舟桥司朗
Owner NAT INST FOR MATERIALS SCI
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