Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Additive for alkali polishing of silicon wafer and application of additive

A silicon wafer alkali and additive technology, which is used in water-based dispersants, sustainable manufacturing/processing, electrical components, etc., to achieve the effect of controllable size structure, improved electrical properties, and controllable size of polished tower base-like structures

Active Publication Date: 2022-02-11
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the additives for monocrystalline silicon back polishing on the market can only form larger-sized tower bases, and there is no additive that can form smaller-sized tower bases on the market.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Additive for alkali polishing of silicon wafer and application of additive
  • Additive for alkali polishing of silicon wafer and application of additive
  • Additive for alkali polishing of silicon wafer and application of additive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] 1) Preparation of additives: 0.75 parts by mass of gelatin, 2 parts by mass of acrylamide, 0.5 parts by mass of benzyltriethylammonium chloride, 3 parts by mass of sodium p-aminosalicylate, 4 parts by mass of ammonium thiocyanate, 3 parts by mass of Alkyl glycosides and 0.2 parts by mass of sodium benzoate are added to 86.55 parts by mass of deionized water, and mixed evenly to form an additive;

[0043] 2) Preparation of polishing liquid: add the additive prepared in step 1) to the potassium hydroxide solution, mix well to make a polishing liquid; the mass ratio of the additive to the potassium hydroxide solution is 1:100; the hydroxide in the potassium hydroxide solution The mass percentage composition of potassium is 3%;

[0044] 3) Alkali polishing: use the polishing solution prepared in step 2) to polish the single crystal silicon wafer, the temperature of the polishing treatment is controlled at 70° C., and the time is controlled at 180 s.

[0045] Example 1 The ...

Embodiment 2

[0047] 1) Preparation of additives: 1.5 parts by mass of gelatin, 1.5 parts by mass of acrylamide, 1 part by mass of tetrabutylammonium chloride, 3 parts by mass of sodium p-aminosalicylate, 5 parts by mass of ammonium thiocyanate, 4 parts by mass of alkyl Glycosides and 0.2 parts by mass of sodium benzoate are added to 83.8 parts by mass of deionized water, and mixed evenly to form an additive;

[0048] 2) Preparation of polishing liquid: add the additive prepared in step 1) to the potassium hydroxide solution, mix well to make a polishing liquid; the mass ratio of the additive to the potassium hydroxide solution is 0.75:100; the hydroxide in the potassium hydroxide solution The mass percentage composition of potassium is 2.5%;

[0049] 3) Alkali polishing: use the polishing solution prepared in step 2) to polish the single crystal silicon wafer, the temperature of the polishing treatment is controlled at 60°C, and the time is controlled at 240s).

[0050] Example 2 The scan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diagonal sizeaaaaaaaaaa
Diagonal sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an additive for alkali polishing of a silicon wafer. The additive comprises the following components in parts by mass: 0.5-2 parts of gelatin, 1-2 parts of acrylamide, 0.5-2 parts of quaternary ammonium salt, 1-3 parts of sodium p-aminosalicylate, 4-5 parts of ammonium thiocyanate, 3-4 parts of alkyl glycoside, 0.1-0.3 part of sodium benzoate and 81.7-89.9 parts of water. When the additive is added into a polishing solution for alkali polishing of the silicon wafer, the reaction rate of a [111] / [100] surface can be changed, the reaction rate of a [100] surface can be inhibited, the flatness of the back surface of the silicon wafer can be changed, a relatively rough small-size tower footing structure can be formed on the back surface of the silicon wafer after alkali polishing, and the reflectivity of the back surface of the silicon wafer can be reduced to a small extent, so that back slurry contact is facilitated; and the slurry tension is improved, the FF can be improved, and the electrical performance of a battery piece is improved.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for alkali polishing of silicon wafers and an application thereof. Background technique [0002] Additives for monocrystalline silicon back polishing refer to chemical additives added to the polishing solution during the manufacturing process of monocrystalline silicon solar cells to help protect the front PN junction of silicon wafers from damage and improve the back polishing effect. In the production process of crystalline silicon solar cells, in order to further improve the performance and efficiency of the cells, the back of the silicon wafer is usually polished to make the back surface of the silicon wafer smoother or even achieve a mirror effect. After polishing, the back of the silicon wafer is flat and smooth. On the one hand, it can strengthen the reflection of transmitted light and reduce the light transmittance; on the other hand, it can make the aluminum past...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09G1/04H01L21/306
CPCC09G1/04H01L21/30604Y02P70/50
Inventor 裴银强章圆圆陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com