Preparation method of TopCon battery

A technology for batteries and semi-finished products is applied in the field of solar cells to achieve the effects of reducing costs, improving battery efficiency, and simplifying manufacturing processes

Inactive Publication Date: 2022-02-15
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult for the laser to diffuse and dope the B element in BSG into P-type silicon, so there are still major technical difficulties in this solution.

Method used

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  • Preparation method of TopCon battery

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preparation example Construction

[0030] The invention provides a preparation method of a TopCon battery, comprising:

[0031] Provide a semi-finished product of the TopCon cell; the semi-finished product includes a silicon wafer, an emitter layer arranged on the front side of the silicon wafer, a tunnel oxide layer and a doped polysilicon layer arranged on the backside of the silicon wafer in sequence;

[0032] Deposit a gallium oxide passivation layer on the front side of the semi-finished product;

[0033] Selectively doping the front side of the semi-finished product with the gallium oxide passivation layer deposited by laser;

[0034] Deposit a front anti-reflection layer and a back anti-reflection layer on the front and back of the semi-finished product treated by selective doping respectively;

[0035] Electrodes are respectively prepared on the front and back of the semi-finished product on which the front anti-reflection layer and the back anti-reflection layer are deposited to obtain a TopCon batter...

Embodiment 1

[0056] This embodiment provides an N-type gallium oxide passivation front-side selective doping double-sided cell, which consists of a front-side light trapping and passivation layer: silicon nitride / gallium oxide; P-type emitter; P+ selective emitter composition.

[0057] The preparation method includes the following steps:

[0058] 1.1 Select an N-type silicon wafer with a resistivity of 1.5 Ω·cm for alkaline texturing cleaning, and the reflectivity after texturing is 10%.

[0059] 1.2 Carry out B diffusion, where BBr 3 N 2 The flow rate was 120 sccm, the advancing temperature was 900 °C, and the advancing time was 100 min to form a P-type diffusion layer with low surface concentration, and the diffusion square resistance was 120 Ω / sq.

[0060] 1.3 Remove the BSG and P+ layers on the back and sides by cleaning, and use LPCVD equipment to prepare SiO on the back 2 Tunneling layer, the thickness of the tunneling layer is 5 nm; 2 A Poli-Si layer is laminated on the layer w...

Embodiment 2

[0067] This embodiment provides an N-type gallium oxide passivation front-side selective doping double-sided cell. Compared with Embodiment 1, the thickness of gallium oxide in this embodiment is 1 nm.

[0068] The solar cell was prepared according to the preparation method in Example 1, and the test results showed that the open circuit voltage was 698V, the current was 11.02A, and the conversion efficiency was 23.10%.

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Abstract

The invention provides a preparation method of a TopCon battery. Compared with the prior art, the gallium oxide is laminated on the front surface of the TopCon cell, the gallium oxide can passivate the surface, meanwhile, the gallium oxide is used as a source of a front surface P + doping agent, gallium element has a fast diffusion coefficient in silicon, front surface doping is carried out in cooperation with laser, local gallium element doping can be achieved, heavy doping of a metal contact area is achieved, and contact resistance is reduced. Meanwhile, the light doping of a light receiving region is realized, the surface auger recombination is reduced, the open-circuit voltage is improved, the fill factor FF is improved, and the battery efficiency is improved. Moreover, the method does not need to additionally provide a dopant source, and only needs to add a laser doping process after the front gallium oxide lamination, thereby simplifying the preparation process of the TopCon battery, and facilitating the reduction of the cost.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and particularly relates to a preparation method of a TopCon cell. Background technique [0002] High-efficiency and low-cost crystalline silicon cell technology has always been the constant pursuit of the photovoltaic industry. Compared with P-type crystalline silicon cells, N-type crystalline silicon cells have high minority carrier lifetime, no light-induced attenuation, good low-light effect, and small temperature coefficient. [0003] Among them, TOPCon is a tunnel oxide passivated contact solar cell technology based on the principle of selective carriers. Its cell structure is an N-type silicon substrate cell, and an ultra-thin oxide layer is prepared on the back of the cell. Silicon, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reduce the surface recombination rate, and achieve selective contact with a highly doped si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/225H01L31/18H01L31/0216
CPCH01L31/1804H01L31/1868H01L31/02167H01L21/2251H01L21/268Y02E10/547Y02P70/50
Inventor 余浩方灵新单伟何胜徐伟智黄海燕陆川
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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