Nano-metal hole filling method adopting dry and wet mixed filling

A technology of mixed filling and nano-metal, which is applied in the direction of electrical connection and formation of printed components, can solve the problems of poor electrical and thermal conductivity, low density, low deep neck ratio, etc., and achieve strong thermal shock resistance, high density, The effect of simple process

Pending Publication Date: 2022-02-15
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, in the blind hole filling process of circuit substrates and carrier boards, there is no technology that uses nano-metals (micro-nano metals) as filling materials. Therefore, a method of using nano-metals to complete circuit substrates and carrier boards is proposed. The through-hole blind hole filling technology is of great significance, which can give full play to the advantages of nano-metals, and effectively solve the problems of poor electrical and thermal conductivity, low deep neck ratio, low density, and complicated process in current hole filling methods.

Method used

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  • Nano-metal hole filling method adopting dry and wet mixed filling
  • Nano-metal hole filling method adopting dry and wet mixed filling
  • Nano-metal hole filling method adopting dry and wet mixed filling

Examples

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Embodiment 1

[0031] see Figure 1-Figure 3 , the present embodiment discloses a method for filling nano-metal holes with mixed dry and wet filling, including the following steps:

[0032] (1) Plasma cleaning is performed on the surface of the to-be-filled hole 2 of the sample substrate 3, so that the micro-nano metal paste is infiltrated with the sample substrate 3; then the micro-nano metal paste 1 is coated and filled on the to-be-filled hole 2 of the sample substrate 3 middle. Cleaning the to-be-filled holes 2 of the sample substrate 3 by a plasma cleaner is beneficial to improve the wettability of the surfaces of the to-be-filled holes 2 , so that the micro-nano metal paste 1 can more easily enter the to-be-filled holes 2 . The gases used include argon, hydrogen, nitrogen, oxygen, compressed air, carbon tetrafluoride, etc. The to-be-filled holes 2 described in this embodiment include through holes and blind holes.

[0033] (2) By vacuuming the to-be-filled hole 2 of the sample subst...

Embodiment 2

[0044] see Figure 4 , the present embodiment discloses another method for filling nano-metal holes with mixed dry and wet filling, which specifically includes the following steps:

[0045] (1) Plasma cleaning is performed on the surface of the sample substrate to be filled, so that the micro-nano metal paste is wetted with the sample substrate; then the micro-nano metal particles are solid coated and filled in the to-be-filled holes of the sample substrate.

[0046] (2) After the solid micro-nano metal particles completely fill the to-be-filled holes of the sample substrate, the solid surface of the micro-nano metal particles in the to-be-filled holes is treated, and then pressure is applied, and at the same time the micro-nano metal particles in the to-be-filled holes are applied. The solid vibrates, thereby realizing the compaction of the micro-nano metal particle solid in the hole to be filled.

[0047] (3) Adding a wetting medium, specifically a micro-nano metal paste, i...

Embodiment 3

[0051] The difference between this embodiment and Embodiment 2 is:

[0052] see Figure 5 , in step (3), adding a wetting medium to the to-be-filled hole of the sample substrate, the wetting medium is specifically a flux solution. Using the flux solution as a wetting medium will help reduce the surface tension and prevent metal oxidation while producing a wetting effect on the micro-nano metal particles, thereby improving the hot-pressing sintering effect in the later stage.

[0053] In this embodiment, the flux solution is composed of the following raw materials: 10%-30% of active agent, 10%-50% of film-forming agent, 1%-20% of surfactant and the remainder of solvent. Specifically, the active agents described in this embodiment are inorganic substances such as hydrochloric acid, hydrofluoric acid, orthophosphoric acid, stannous chloride, zinc chloride, ammonium chloride, potassium fluoride, and sodium fluoride, or rosin, hydrochloric acid, etc. Organic halides such as dimet...

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Abstract

The invention discloses a nano-metal hole filling method adopting dry and wet mixed filling. The method comprises the following step: (1) coating and filling a to-be-filled hole of a sample substrate with a micro-nano metal particle solid or a micro-nano metal paste; (2) completely filling the to-be-filled hole with the micro-nano metal particle solid or the micro-nano metal paste; (3) adding a wet medium or a dry medium into the to-be-filled hole to form a micro-nano metal dry-wet mixture so as to change the wettability of the original filler in the to-be-filled hole; (4) compacting the micro-nano metal dry-wet mixture on the surface of the to-be-filled hole by applying an external acting force; and (5) carrying out hot pressed sintering on the micro-nano metal dry-wet mixture in the to-be-filled hole of the sample substrate to complete hole filling processing of the sample substrate. According to the invention, the heat and electricity conduction performance and density of the through hole and blind hole interconnection structure can be improved, and the matching of thermal expansion coefficients of the filling material and the circuit substrate can be ensured.

Description

technical field [0001] The invention relates to the field of hole filling of circuit substrates, in particular to a nano metal hole filling method of dry and wet mixed filling. Background technique [0002] As one of the core technologies of semiconductor and integrated circuit manufacturing, the hole-filling technology of the carrier plate can obtain through-hole and blind-hole interconnection structures, which has the advantages of reducing delay, reducing energy consumption, and improving integration. At present, the realization of through-hole and blind-hole interconnection structures is mainly based on electroplating copper hole filling technology; however, such a hole-filling method is prone to defects such as hole filling and clip filling, and has the effect of affecting the conduction of through-hole and blind-hole holes. Thermal conductivity and thermal expansion coefficient mismatch and other issues. [0003] Nano metal has the advantages of low temperature proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/42
CPCH05K3/42
Inventor 杨冠南张坤吴润熹崔成强张昱
Owner GUANGDONG UNIV OF TECH
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