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Copper-gallium target material, and preparation method and application thereof

A target, copper gallium technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of high impurity and gas content, slow sputtering rate, low yield, etc., to achieve high density , The effect of high yield and uniform grain size distribution

Pending Publication Date: 2022-02-25
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the copper gallium target prepared by powder metallurgy has uniform composition, it has low density, long process flow, high impurity and gas content, and slow sputtering rate; the casting method also has problems such as serious component segregation, shrinkage cavity, and porosity. resulting in lower yield

Method used

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  • Copper-gallium target material, and preparation method and application thereof

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Effect test

Embodiment 1

[0037] The synthesis steps of the copper gallium target in the embodiment of the present invention are as follows:

[0038] (1) Weigh 30Kg of copper-gallium alloy and put it into a graphite crucible, keep the vacuum in the crucible below 0.1Pa, raise the temperature to 1000°C at a heating rate of 20°C / min, fully stir and keep warm for 10min after the alloy is completely melted, Obtain copper-gallium alloy liquid, wherein the weight ratio of copper and gallium in the copper-gallium alloy taken is 75:25;

[0039] (2) Evenly spray boron nitride on the inside of the graphite mold and the outer surface of the graphite inner core, and then put the assembled graphite mold into a heating furnace for heating for 1 hour at a heating temperature of 180°C; Evenly cast on a high-purity graphite funnel with a hole diameter of 6mm, the copper-gallium alloy liquid flows into the graphite mold along with the funnel, wherein the temperature is maintained at 1000°C during the casting process, an...

Embodiment 2

[0042] The synthesis steps of the copper gallium target in the embodiment of the present invention are as follows:

[0043] (1) Weigh 30Kg of copper-gallium alloy and put it into a graphite crucible, keep the vacuum in the crucible below 0.1Pa, raise the temperature to 950°C at a heating rate of 15°C / min, fully stir and keep warm for 15min after the alloy is completely melted, Obtain copper-gallium alloy liquid, wherein the weight ratio of copper and gallium in the copper-gallium alloy taken by weighing is 70:30;

[0044] (2) Evenly spray boron nitride on the inside of the graphite mold and the outer surface of the graphite inner core, then put the assembled graphite mold into a heating furnace and heat it for 1 hour at a heating temperature of 230°C; Evenly cast on a high-purity graphite funnel with a hole diameter of 7mm, the copper-gallium alloy liquid flows into the graphite mold along with the funnel, wherein the temperature is maintained at 950°C during the casting proce...

Embodiment 3

[0047] The synthesis steps of the copper gallium target in the embodiment of the present invention are as follows:

[0048] (1) Weigh 30Kg of copper-gallium alloy and put it into a graphite crucible, keep the vacuum in the crucible below 0.1Pa, raise the temperature to 1050°C at a heating rate of 25°C / min, fully stir and keep warm for 10min after the alloy is completely melted, Obtain copper-gallium alloy liquid, wherein the weight ratio of copper and gallium in the copper-gallium alloy taken is 65:35;

[0049](2) Evenly spray boron nitride on the inside of the graphite mold and the outer surface of the graphite inner core, then put the assembled graphite mold into a heating furnace for heating for 1 hour at a heating temperature of 130°C; Evenly cast on a high-purity graphite funnel with an aperture of 8mm, the copper-gallium alloy liquid flows into the graphite mold along with the funnel, wherein the temperature is maintained at 1050°C during the casting process, and the cas...

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Abstract

The invention discloses a copper-gallium target material, and a preparation method and an application thereof, and belongs to the technical field of metal target materials. The copper-gallium alloy is prepared by taking the copper-gallium alloy as a raw material, heating, melting, casting and cooling. According to the invention, the copper-gallium alloy is preferably selected and directly used as a raw material for preparing the copper-gallium target material, and meanwhile, the casting temperature and the casting rate are preferably selected so that the prepared product is free of segregation, pores and cracks, high in density and uniform in grain size distribution; and the copper-gallium target material prepared by the preparation method is high in yield which can reach more than 91%, the oxygen content is lower than 10ppm, and the copper-gallium target material can well meet the requirement of vacuum sputtering coating so that the copper-gallium target material can be applied to thin layer manufacturing of solar cells.

Description

technical field [0001] The invention belongs to the technical field of metal targets, and in particular relates to a copper gallium target and its preparation method and application. Background technique [0002] Copper indium gallium selenide (CIGS) thin-film solar cells are considered to be the most potential solar cells in thin-film batteries because they are non-toxic, non-polluting, and have high photoelectric conversion efficiency and stability. Among them, the copper-gallium target is one of the important raw materials for sputtering coating, and its purity, density, and microstructure directly affect the quality of CIGS thin films, thereby affecting the photoelectric conversion efficiency of CIGS thin-film solar cells. [0003] At present, the preparation methods of copper gallium targets are mainly divided into casting method and powder metallurgy method. Although the copper gallium target prepared by powder metallurgy has uniform composition, it has low density, l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C9/00C22C1/03B22D7/00B22D7/06H01L31/032
CPCC23C14/3414C22C9/00C22C1/03B22D7/005B22D7/06C23C14/3407H01L31/0322Y02E10/541Y02P70/50
Inventor 王兰黄宇彬阿南·辛格·迪欧达特童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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