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Titanium oxynitride film pressure sensor and manufacturing method thereof

A technology of titanium oxynitride and a manufacturing method, which is applied in the directions of instruments, measuring force, ion implantation and plating, etc., can solve the large difference in the proportion of composition content uniformity, the deterioration of film density and roughness, and the dispersion of sensor batch performance. Large and other problems, to achieve the effect of good performance consistency, good compactness, and high long-term work stability

Pending Publication Date: 2022-02-25
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual preparation process, in order to better react to form titanium oxynitride, a large flow of oxygen and nitrogen needs to be introduced, resulting in a poor vacuum degree and an increase in the gas content inside the deposited film, resulting in the compactness and The roughness becomes worse, which is not conducive to the deposition of the film and the improvement of the quality of the film; at the same time, the film deposited and prepared in a poor vacuum environment has more defects, poor compactness, and weak film adhesion, which leads to batch failure of the sensor. Large performance dispersion, poor consistency and stability
In addition, there is a big difference in the uniformity ratio of N, O, and Ti in the film, and the difference reaches 5%.

Method used

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  • Titanium oxynitride film pressure sensor and manufacturing method thereof
  • Titanium oxynitride film pressure sensor and manufacturing method thereof

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Embodiment 1

[0037] A method for manufacturing a titanium oxynitride film pressure sensor, comprising the following steps:

[0038]S1. On the surface of the elastic element 100, perform mirror treatment by grinding and polishing methods, and deposit an insulating film 201 (2-6um silicon oxide film) on the surface of the elastic element 100 by magnetron sputtering film deposition technology. In the present invention, the elastic element 100 used may be a stainless steel elastic substrate, but is not limited thereto.

[0039] S2. In the strained region (middle region) of the insulating film 201, using titanium nitride as the target material, a titanium nitride oxide film 202 is deposited on the insulating film 201 by a vacuum sputtering method, specifically: first, the surface of the titanium nitride is treated Sputtering cleaning, removing impurities and pollutants on the surface of the target, and then introducing oxygen into the vacuum chamber to react with the sputtered titanium nitride ...

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Abstract

The invention discloses a titanium oxynitride film pressure sensor and a manufacturing method thereof. The manufacturing method of the sensor comprises the steps that an insulating film, a strain resistor, a lead bonding pad and a protective layer are prepared on an elastic element in sequence, the strain resistor is prepared from a titanium oxynitride film, and the titanium oxynitride film is prepared by taking titanium nitride as a target material through a sputtering method. Compared with the conventional titanium oxynitride film pressure sensor, the prepared titanium oxynitride film pressure sensor has the advantages that the content uniformity proportion of each component in the titanium oxynitride film is small, the compactness is good, and the structure is stable, so that the titanium oxynitride film pressure sensor has better stability and reliability, the titanium oxynitride film pressure sensor is a novel thin film pressure sensor and is better in performance, high in use value and good in application prospect.

Description

technical field [0001] The invention relates to a titanium oxynitride film pressure sensor and a manufacturing method thereof. Background technique [0002] Thin-film pressure sensors have the advantages of high temperature resistance, corrosion resistance, and strong vibration and shock resistance, and are widely used in aerospace, shipbuilding, and petroleum industries. Conventional thin-film pressure sensors use nickel-chromium material as the strained film layer to convert pressure into electrical signal output. Limited by the small sensitivity coefficient of nickel-chromium material itself, the output signal of the sensor is small, which affects the stability of the sensor and the circuit processing in the production process. cause trouble. Therefore, it is of great significance to adopt new processes and new methods to prepare new materials with higher sensitivity coefficients, and then to manufacture sensors with high sensitivity output and high stability. [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/22C23C14/06C23C14/34C23C14/02C23C14/54
CPCG01L1/22C23C14/0676C23C14/024C23C14/34C23C14/0036C23C14/548
Inventor 蓝镇立何峰周国方车颜贤
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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