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Micromechanical resonator and preparation method thereof

A micromechanical resonator and resonator technology, applied in the field of microelectronics, can solve problems such as energy loss, achieve the effect of improving Q value and reducing anchor point loss

Pending Publication Date: 2022-03-01
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Anchor point loss is an important energy loss mechanism that affects the Q value of a micromechanical resonator. The transverse mechanical wave when the micromechanical resonator resonates is not completely reflected back at the boundary of the resonator, but is transmitted to the substrate through the support structure, causing energy loss

Method used

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  • Micromechanical resonator and preparation method thereof
  • Micromechanical resonator and preparation method thereof
  • Micromechanical resonator and preparation method thereof

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preparation example Construction

[0067] In the second aspect, the present invention provides a method for preparing a micromechanical resonator. The connecting part of the support beam and the resonator is made by photolithography using a laser direct writing process or a thermal reflow process, or using a laser or ion beam without masking It is manufactured by film etching; the above-mentioned micro-mechanical resonator is prepared by adopting the preparation method of the micro-mechanical resonator.

[0068] (1) The prepared micromechanical resonator is a capacitive resonator, and the preparation method comprises the following steps:

[0069] Step 1, etching a cavity structure on the substrate silicon wafer, and growing a buried oxide layer on the surface of the substrate silicon wafer;

[0070] Step 2, photoetching and patterning the lower surface of the device layer silicon to form a structure in which the size of the lower surface of the device layer silicon varies in the thickness direction;

[0071] S...

Embodiment 1

[0101] figure 1 It is shown that the resonant oscillator provided by Embodiment 1 is a capacitive resonator with a thin film structure of single crystal silicon.

[0102] Specifically, a micromechanical resonator includes a substrate silicon chip 1 and a resonator structure, the front side of the substrate silicon chip 1 is provided with a cavity structure; the resonator structure includes a resonant oscillator 3 and a support beam 2 .

[0103] The resonant oscillator 3 is suspended above the cavity structure, and the resonant oscillator 3 is connected to the silicon substrate 1 through the support beam 2 .

[0104] The support beam 2 is located at the boundary of the resonant oscillator 3, and the thickness direction of the connection between the support beam 2 and the resonant oscillator 3 is gradual, specifically, the upper and lower surfaces of the support beam 2 have a concave geometry. structure.

[0105] The cross-section of the support beam 2 is a Boolean subtraction...

Embodiment 2

[0114] image 3 It is shown that the resonant vibrator provided in Embodiment 2 is a piezoelectric resonator with a metal-piezoelectric layer-metal composite film structure.

[0115] The difference from the first embodiment is that the resonant oscillator 3 in the first embodiment is a single structure including single crystal silicon, the resonant oscillator 3 is a rectangular plate, and the micromechanical resonator is a capacitive resonator. In Embodiment 2, the resonant vibrator 3 is a composite film structure including metal-piezoelectric layer-metal, the resonant vibrator 3 is a polygonal plate, the support beam 2 is located at the vibration node, the number of support beams 2 is multiple, and the resonance Vibrator 3 is connected to substrate silicon chip 1 through support beam 2; the micromechanical resonator is a piezoelectric resonator, and the material of the piezoelectric layer is quartz, aluminum nitride, scandium-doped aluminum nitride, zinc oxide , any one of l...

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Abstract

The invention belongs to the technical field of microelectronics, and discloses a micromechanical resonator and a preparation method thereof. The micromechanical resonator comprises a substrate silicon wafer and a resonator structure, the resonator structure comprises a resonant oscillator and a supporting beam, the substrate silicon wafer is provided with a cavity structure, the resonant oscillator is suspended above the cavity structure, the resonant oscillator is connected with the substrate silicon wafer through the supporting beam, and the supporting beam is connected with the boundary of the resonant oscillator. The connecting part of the supporting beam and the resonant oscillator is of a structure with the size changing in the thickness direction. According to the invention, anchor point loss can be effectively reduced, and the Q value of the resonator is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a micromechanical resonator and a preparation method thereof. Background technique [0002] Microelectromechanical Systems (MEMS) is a miniaturized mechanical device or system manufactured based on semiconductor micro-nano processing technology. It has the advantages of small size, light weight, low power consumption, low price, and compatibility with integrated circuit manufacturing processes. . A micromechanical resonator is a device with a micromechanical structure as the main body. Its working method is that when the resonator is excited by an external physical signal and the frequency of the driving signal is equal to the natural frequency of the system, the mechanical structure of the system will be in its natural frequency. Resonance occurs near the frequency, and the amplitude of the system reaches the maximum, and the resulting resonance signal ...

Claims

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Application Information

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IPC IPC(8): H03H9/24H03H3/007
CPCH03H9/2405H03H3/0072H03H2003/027
Inventor 吴国强肖宇豪陈文韩金钊
Owner WUHAN UNIV
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