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Crystalline silicon solar cell PECVD back film optimization process

A solar cell and process technology, applied in metal material coating process, circuit, photovoltaic power generation, etc., can solve the problems of lower production efficiency and long coating time, and achieve the effects of maintaining consistency, rapid deposition, and improving absorption capacity

Pending Publication Date: 2022-03-04
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] CN113013267A discloses a solar cell, a manufacturing method of a cell passivation layer and a solar module, the solar cell includes a cell substrate, a silicon oxide passivation film, a silicon oxynitride passivation film and a silicon nitride passivation film stacked in sequence , the thickness range of silicon oxide passivation film is 11-100nm; the thickness range of silicon oxynitride passivation film is 20-110nm; x Passivation layer, but its coating time is longer, reducing production efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] This embodiment provides a PECVD back film optimization process for crystalline silicon solar cells, and the optimization process includes the following steps:

[0047] Constant temperature treatment of crystalline silicon wafers at 500°C for 720s;

[0048] Then pass SiH into the passivation furnace 4 , NH 3 and N 2 O, PECVD is used to perform the first deposition on the back of the crystalline silicon wafer to form a silicon oxynitride film; during the first deposition process, the temperature in the passivation furnace is maintained at 500 ° C, the pressure is maintained at 250 Pa, SiH 4 The flow rate is 6L / min, NH 3 The flow rate is 6L / min, N 2 The flow rate of O is 10L / min, the pulse ratio is 1:13, the deposition is 400s, and a silicon nitride oxide film with a thickness of 40nm is formed;

[0049] Next, pass SiH into the passivation furnace 4 and NH 3 , using PECVD to perform a second deposition on the basis of the silicon oxynitride film to form a silicon n...

Embodiment 2

[0051] This embodiment provides a PECVD back film optimization process for crystalline silicon solar cells, and the optimization process includes the following steps:

[0052] Constant temperature treatment of crystalline silicon wafers at 450°C for 1000s;

[0053] Then pass SiH into the passivation furnace 4 , NH 3 and N 2 O, the PECVD method is used to perform the first deposition on the back of the crystalline silicon wafer to form a silicon oxynitride film; during the first deposition process, the temperature in the passivation furnace is maintained at 450 ° C, the pressure is maintained at 200 Pa, SiH 4 The flow rate is 2L / min, NH 3 The flow rate is 8L / min, N 2 The flow rate of O is 12L / min, the pulse ratio is 1:12, the deposition is 200s, and a silicon nitride oxide film with a thickness of 20nm is formed;

[0054] Next, pass SiH into the passivation furnace 4 and NH 3 , the second deposition is performed on the basis of the silicon oxynitride film by PECVD to for...

Embodiment 3

[0056] This embodiment provides a PECVD back film optimization process for crystalline silicon solar cells, and the optimization process includes the following steps:

[0057] Under the condition of 560°C, the crystalline silicon wafer is subjected to constant temperature treatment for 900s;

[0058] Then pass SiH into the passivation furnace 4 , NH 3 and N 2 O, the PECVD method is used to perform the first deposition on the back of the crystalline silicon wafer to form a silicon oxynitride film; during the first deposition process, the temperature in the passivation furnace is maintained at 560 ° C, the pressure is maintained at 300 Pa, SiH 4 The flow rate is 10L / min, NH 3 The flow rate is 10L / min, N 2 The flow rate of O is 20L / min, the pulse ratio is 1:18, and the deposition is 700s to form a silicon nitride oxide film with a thickness of 80nm;

[0059] Next, pass SiH into the passivation furnace 4 and NH 3 , the second deposition is performed on the basis of the sili...

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Abstract

The invention provides a crystalline silicon solar cell PECVD (Plasma Enhanced Chemical Vapor Deposition) back film optimization process, which comprises the following steps of: carrying out constant-temperature treatment on a crystalline silicon wafer, and then sequentially depositing a silicon oxynitride film and a silicon nitride film on the back surface of the crystalline silicon wafer; the deposition modes of the silicon oxynitride film and the silicon nitride film are respectively and independently PECVD (Plasma Enhanced Chemical Vapor Deposition); in the process of forming the silicon oxynitride film, the pulse ratio is 1: (12-18); according to the optimization process, by controlling the pulse ratio in the process of forming the silicon oxynitride film, rapid deposition of the silicon oxynitride film is achieved, the deposition time is effectively shortened, the production efficiency is improved, and the film color of the formed back film is more uniform; and meanwhile, the utilization rate of the special gas is increased, and high economic benefits are achieved.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon solar cells, and in particular relates to a process for optimizing a PECVD back film of a crystalline silicon solar cell. Background technique [0002] With the continuous advancement of high-efficiency solar cell research and development, high-quality surface passivation has become indispensable for high-conversion efficiency solar cells. In recent years, Passivated Emitter Rear Cell (PERC) technology has received widespread attention. The back contact cell is a kind of solar cell with passivation on both sides of the emitter and the back. [0003] The general process flow of PERC cells has the following steps: texturing→diffusion→SE laser→oxidation→etching (removing PSG)→annealing→back film→positive film→back film laser grooving→screen printing→sintering→light injection or Electric injection → test sorting. Among them, the coating process is an extremely important part of the PERC ...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/34C23C16/455C23C16/50H01L31/18
CPCC23C16/308C23C16/345C23C16/45523C23C16/50H01L31/1868Y02E10/50Y02P70/50
Inventor 李永伟任良为马政周芳超刘建强
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD