Easily cleaved gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof
A chemical machinery, gallium oxide technology, applied in metal processing equipment, polishing compositions containing abrasives, grinding machine tools, etc., can solve the problems of low polishing efficiency, material waste, high surface roughness, and achieve the effect of improving work efficiency
Pending Publication Date: 2022-03-25
YANCHENG INST OF TECH
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[0005] In order to solve the problems of low polishing efficiency, high surface roughness and serious waste of materials in existing gallium oxide wafers, the present invention discloses a chemical mechanical polishing process, polishing liquid and preparation method for easy-cleavage gallium oxide wafers to improve the polishing effect, Reducing the Surface Roughness of Gallium Oxide Wafers
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[0026] In order to deepen the knowledge and understanding of the present invention, the present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with aspects of the invention as recited in the appended claims.
[0027] figure 2 For polishing the sample is gallium oxide (100) wafer, image 3 The polished sample is an oxide (010) wafer, and the surface roughness of the (100) crystal plane and the (010) crystal plane of the gallium oxide substrate before polishing is measured by a VK topography instrument. The measured area is 145×10...
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Abstract
The invention discloses a chemical mechanical polishing process for an easy-cleavage gallium oxide wafer, a polishing solution and a preparation method of the polishing solution. The polishing solution comprises the following components: a grinding material, a dispersing agent, an oxidizing agent, a surfactant, a defoaming agent and a pH regulator. And the grinding material is one or more of silicon dioxide, aluminum oxide, cerium oxide and diamond. The dispersing agent is a hydrophobic modified acrylic polymer. The oxidant is hydrogen peroxide. The surfactant is one or more of hexadecyl trimethyl ammonium bromide, sodium dodecyl benzene sulfonate, an amino acid type surfactant and fatty alcohol-polyoxyethylene ether 5. And the defoaming agent is tributyl phosphate. And the pH regulator is a compound of inorganic alkali and organic alkali or inorganic acid and organic acid. The polishing process comprises the following steps: sequentially carrying out rough polishing, semi-fine polishing and fine polishing on the gallium oxide wafer by using a self-developed polishing solution, wherein the material of a polishing pad is polyurethane. According to the invention, the working efficiency is improved, and the polished gallium oxide wafer can have an ultra-smooth surface.
Description
technical field [0001] The invention belongs to the technical field of ultra-precision processing of hard and brittle crystals, and in particular relates to a chemical-mechanical polishing process for an easy-cleavable gallium oxide wafer, a polishing liquid and a preparation method thereof. Background technique [0002] Single crystal gallium oxide is a hard and brittle material. As one of the new generation of semiconductor materials, it has a series of excellent physical and chemical properties such as ultra-wide bandgap, high breakdown field strength, excellent electrical conductivity and high transmittance in the deep ultraviolet band. In recent years, to attract attention. [0003] Chemical Mechanical Polishing (CMP) belongs to the ultra-precision machining method and is a means of obtaining global planarization. The purpose of this process is to obtain a surface that is both flat and free from scratches and impurities. CMP is a technology that combines mechanical act...
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IPC IPC(8): C09G1/02B24B37/00
CPCC09G1/02B24B37/00
Inventor 周海蒋网徐亚萌任相璞计健
Owner YANCHENG INST OF TECH