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Manufacturing process of dry etching lower electrode

A production process and electrode technology, applied in the field of dry-etched lower electrode production process, can solve the problems of poor dielectric layer density, reduced lower electrode withstand voltage performance, product defects, etc., to increase withstand voltage performance, improve product yield, The effect of reducing scratches

Pending Publication Date: 2022-03-29
苏州众芯联电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing manufacturing process of the lower electrode has the following problems: 1) The thermal expansion coefficients of alumina and aluminum substrates differ greatly, and aluminum oxide is prone to cracks due to thermal expansion and contraction during the thermal spraying process; 2) Atmospheric plasma Spraying needs to use powder with larger particles as raw materials, usually the diameter of the particles is in the range of 10-100 microns, the resulting dielectric layer is poor in density and contains more pores; 3) The hardness of alumina is about HV900, while the hardness of glass The hardness is about HV500, so the hardness of aluminum oxide is much higher than that of glass, so the hardness of the electrode surface or floating point is also much higher than the glass substrate of the production panel
The existence of the above-mentioned cracks and pores will reduce the withstand voltage performance of the lower electrode, and the phenomenon that the dielectric layer is easily broken down during the use of the electrode, and the surface of the electrode or the floating point hardness is too high will easily scratch the bottom surface of the glass substrate. cause defective products

Method used

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  • Manufacturing process of dry etching lower electrode
  • Manufacturing process of dry etching lower electrode

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Embodiment 1

[0033] This embodiment is a manufacturing process of the lower electrode without floating point 6 and using yttrium oxyfluoride as the dielectric layer material. The process includes the following steps:

[0034] S1. The metal substrate 1 is produced by machining and welding. The metal substrate 1 is provided with structures such as a cooling water tank 13, a helium tank, a helium hole 121, a power supply part 11, and a lift-pin hole 14. The materials used are Aluminum 6061.

[0035] S2, install the ceramic ring and the metal rod with ceramic glue at the power supply part 11, then dry at room temperature;

[0036] S3. Perform sandblasting treatment on the upper surface of the metal substrate 1 to make the roughness reach 3-4 microns, the sandblasting material used is 100# white corundum, and the sandblasting pressure is 0.6MPa;

[0037] S4. Forming the lower dielectric layer 2 on the upper surface of the metal substrate 1 by suspension plasma spraying. Spray material is Y 5...

Embodiment 2

[0042] The present embodiment is the manufacturing process of band floating point 6, adopting yttrium fluoride as the lower electrode of dielectric layer and floating point material, comprising the following steps (such as figure 1 shown):

[0043] S1. The metal substrate 1 is manufactured by machining and welding, and the metal substrate 1 is provided with structures such as a cooling water tank 13, a helium tank, a helium hole 121, a power supply part 11, and a lift-pin hole 14;

[0044] S2, install the ceramic ring and the metal rod with ceramic glue at the power supply part 11, then dry at room temperature;

[0045] S3. Perform sandblasting treatment on the upper surface of the metal substrate 1 to make the roughness reach 5-6 microns, the sandblasting material used is 40# white corundum, and the sandblasting pressure is 0.5MPa;

[0046] S4. Forming the lower dielectric layer 2 on the upper surface of the metal substrate 1 by suspension plasma spraying. Spraying material...

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Abstract

The invention discloses a manufacturing process of a dry etching lower electrode, which comprises the following steps of: S1, manufacturing a metal base material which comprises a power supply part; s2, mounting a ceramic ring and a metal rod on the power supply part; s3, the upper surface of the metal base material is subjected to sand blasting treatment, so that the roughness of the upper surface of the metal base material is not smaller than 3 micrometers; s4, a lower dielectric layer is formed on the upper surface of the metal base material through suspension plasma spraying; s5, spraying the upper surface of the lower dielectric layer to form an electrode layer; s6, performing plasma spraying on the upper surface of the electrode layer by using suspension liquid to form an upper dielectric layer; and S7, processing the upper dielectric layer to form peripheral bulges on the upper surface of the upper dielectric layer. The invention provides a manufacturing process of a lower electrode. YF3 powder or Y5O4F7 powder is adopted as a dielectric layer and a floating point material. By adopting the process provided by the invention, the compactness of the dielectric layer can be improved, the voltage resistance of the electrode can be improved, the hardness of the surface and floating points of the electrode can be reduced, and the scratch to the glass substrate can be reduced.

Description

technical field [0001] The invention relates to the technical field of display preparation, in particular to a manufacturing process of dry etching a lower electrode. Background technique [0002] The lower electrode is a core component used in dry etching equipment for making LCD and AMOLED panels. Its function is to fix the glass substrate by electrostatic adsorption during the dry etching process and prevent it from moving. The structure of the commonly used lower electrode mainly includes a metal substrate, a lower dielectric layer, an electrode layer, an upper dielectric layer, protrusions around the surface, a power supply part, a coolant channel, a helium channel, a helium hole, and a lift-pin hole. Some electrodes will have floating points on the surface. When in use, the glass substrate is placed on the surface of the lower electrode, and a voltage is applied to the electric part, thereby forming an electrostatic adsorption force between the electrode layer and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/14H01J37/32C23C4/02C23C4/04C23C4/134
CPCH01J9/14H01J37/3255H01J37/32559C23C4/134C23C4/02C23C4/04
Inventor 赵凯张立祥
Owner 苏州众芯联电子材料有限公司
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