Low-dielectric sealing glass granulation powder and preparation method thereof

Abstract

The invention discloses a low dielectric sealing glass granulation powder and a preparation method thereof, the sealing glass comprises the following components by mole percentage based on oxide: 68.2% to 72.3% of SiO2, 20.7% to 24.8% of B2O3, 1% to 2% of Al2O3, 2% to 3% of Na2O, 0.5% to 1% of K2O, 0.5% to 1% of CaO, and 0.5% to 1% of Bi2O3. The preparation method comprises the following steps: uniformly mixing the raw materials corresponding to the components, melting at 1600-1650 DEG C, quenching to obtain glass slag, carrying out ball milling on the glass slag, pulping, and carrying out spray granulation to obtain granulation powder with certain particle size and sphericity. And preparing the granulated powder into a glass blank with a required shape by compression molding, and placing the glass blank at a certain temperature for glue removal and vitrification to obtain the prefabricated glass bead for sealing. The sealing glass prepared by the method is relatively low in high-temperature viscosity after being melted, and glass residues are easy to recover; and meanwhile, the granulation powder has better sphericity and flowability, and the formed glass blank is transparent and white after glue removal and vitrification. Meanwhile, the dielectric constant and dielectric loss of the sealing glass are small, the dielectric constant is 3.9-4.2 under the frequency of 1 MHz, the dielectric loss is 1 * 10 <-3 >-4 * 10 <-3 >, and the sealing temperature is 840-900 DEG C.

Description

technical field [0001] The invention relates to the technical field of sealing glass, in particular to a low-dielectric sealing glass granulation powder and a preparation method thereof. Background technique [0002] In recent years, the integration of integrated circuits has increased rapidly, and the operating frequency range of radio frequency connectors and microwave devices has also increased significantly. In order to reduce the resulting impedance delay and power loss, in addition to using low-resistivity metals, it is important to reduce The parasitic capacitance of the dielectric layer. Since the capacitance C is proportional to the dielectric constant ε, low-permittivity materials can be used as the interconnection medium to reduce impedance delay and meet the needs of integrated circuit development. [0003] Low-dielectric glass is an ideal candidate material. Due to its outstanding performance characteristics, it is widely used in the field of electronic packagi...

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Problems solved by technology

while increasing the SiO 2 The content will increase the adhesion of the glass powder, making it difficult to sieve the glass powder, and the recovery rate will decrease; at the same time, the low-dielectric sealing glass is generally a low-melting point glass. If the complete decomposition temperature of the selected binder is higher than that of the system The softening point of the glass will lead to incomplete degluing of the sealed glass gob, blackening and foaming after vitrification, which cannot be used in subsequent sealing

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