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X-ray direct detector and preparation method thereof

A detector and X-ray technology, applied in the field of X-ray direct detector and its preparation, can solve the problems of low X-ray absorption efficiency, low detection sensitivity, poor electrical signal collection and imaging effects, etc.

Pending Publication Date: 2022-04-15
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a direct X-ray detector and its preparation method, aiming to solve the problem of low X-ray absorption efficiency and poor electrical signal collection and imaging effect of the X-ray direct detector prepared in the prior art to a certain extent. The problem of low detection sensitivity

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  • X-ray direct detector and preparation method thereof
  • X-ray direct detector and preparation method thereof

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preparation example Construction

[0047] as attached figure 1 , the first aspect of the embodiment of the present application provides a method for preparing an X-ray direct detector, comprising the following steps:

[0048] S10. Dissolving organic urea, organic ligand, carbon group metal halide and halide salt in an organic solvent to form a precursor sol; the halide salt includes organic ammonium halide or alkali metal halide;

[0049] S20. After the precursor sol is formed into a film on the surface of the substrate, annealing is performed to form a two-dimensional hybrid perovskite quantum array film on the surface of the substrate;

[0050] S30. Prepare an electrode layer on the surface of the quantum array film layer away from the substrate to obtain a direct X-ray detector.

[0051] In the preparation method of the X-ray direct detector provided in the first aspect of the embodiment of the present application, organic urea is added when configuring the precursor sol, and the organic urea contains -NH ...

Embodiment 1

[0082] A kind of X-ray direct detector, its preparation comprises the steps:

[0083] ① Dissolve semicarbazide, ammonium chloride, n-butylamine hydroiodide, methylamine hydroiodide, and lead iodide in dimethyl sulfoxide and N,N-dimethylformaldehyde at a volume ratio of 2:3 In the mixed solvent mixed solvent of amide, wherein, the mol ratio of n-butylamine hydroiodide, methylamine hydroiodide, lead iodide is 2:3:4, and the initial concentration of lead iodide in solvent is 3mol / L, the total volume of solvent is 0.5ml, the addition of semicarbazide is 10% of lead iodide, and the addition of ammonium chloride is 10% of lead iodide. Put the obtained mixed solution in a glass bottle with a cover to prevent volatilization of solvents and additives, and stir in a nitrogen-filled glove box at 65°C for 2 hours, then open the container, heat the solution to 100°C, and set the constant temperature time for 30s , Concentrate the solution, then stop heating, cover the bottle cap, make th...

Embodiment 2

[0088] An X-ray direct detector, which differs from Embodiment 1 in that no ammonium chloride is added in step ①.

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Abstract

The invention belongs to the technical field of photoelectricity, and particularly relates to an X-ray direct detector and a preparation method thereof. The preparation method of the X-ray direct detector comprises the following steps: dissolving organic urea, an organic ligand, halogenated carbon group metal and halide salt in an organic solvent to prepare precursor sol; the halide salt comprises organic ammonium halide or alkali halide metal; after the precursor sol is subjected to film forming treatment on the surface of a substrate, annealing treatment is carried out, and a two-dimensional hybrid perovskite quantum array film layer is formed on the surface of the substrate; and preparing an electrode layer on the surface, deviating from the substrate, of the quantum array film layer to obtain the X-ray direct detector. According to the preparation method of the X-ray direct detector, the organic urea can inhibit rapid aggregation of octahedrons in the two-dimensional hybrid perovskite, the thickness of the quantum array film layer can reach 100 [mu] m or above, the two-dimensional hybrid perovskite grows on the surface of the substrate in the direction perpendicular to the substrate, the quantum array film layer which is high in thickness and has strong absorption on X-rays is formed, and the quantum array film layer can be used for preparing the X-ray direct detector. The detection sensitivity is high.

Description

technical field [0001] The application belongs to the field of optoelectronic technology, and in particular relates to an X-ray direct detector and a preparation method thereof. Background technique [0002] Two-dimensional hybrid perovskite is a layered metal halide perovskite. Two-dimensional hybrid perovskite has unique optical and electrical properties due to the confinement effect of quantum well structure on carriers. And its stability is better than three-dimensional metal halide perovskite, which is widely used in light-emitting diodes, solar cells, photoelectric sensors and other fields. The X-ray direct image detector directly converts the X-rays passing through the measured object into electrical signals, and finally converts the electrical signals into images through digital processing. The two-dimensional hybrid perovskite has a high absorption coefficient for X-rays and can generate strong electrical signals in the growth direction of octahedral sheets. It ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/30H01L51/42H01L51/46H01L51/48
CPCH10K39/36H10K39/32H10K71/12H10K71/40H10K85/30H10K30/00Y02E10/549
Inventor 薛冬峰李云龙陈慧雯王晓明
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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