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High-frequency copper-clad substrate with high breakdown strength and preparation method thereof

A high breakdown strength, copper clad substrate technology, applied in chemical instruments and methods, printed circuit manufacturing, manufacturing printed circuit precursors, etc., can solve the problems of low breakdown strength, large temperature change of dielectric constant, etc. The electric constant is stable, the effect of improving uneven surface and smooth surface

Active Publication Date: 2022-04-26
江苏耀鸿电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also many problems with high-frequency copper-clad substrates. The dielectric constant varies greatly with temperature and the breakdown strength is low, which will cause many problems such as band-pass filters, voltage-controlled oscillators and antennas.

Method used

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  • High-frequency copper-clad substrate with high breakdown strength and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: Disperse 10g barium titanate nanoparticles into 20mlH 2 o 2 , ultrasonically dispersed, and refluxed at 105°C under vigorous mechanical stirring. After the reaction is completed, cool to room temperature and let stand to remove the supernatant, then add a large amount of distilled water to wash repeatedly until neutral, centrifuge and dry. Add it to the mixed solvent of ethanol and water, ultrasonically disperse, add KH-570, add hydrochloric acid dropwise to adjust the pH value, and stir. Wash and centrifuge with ethanol for several times, and dry to obtain nanometer barium titanate with double bonds on the surface.

[0033] Step 2: Mix 10g of nano-barium titanate and 6g of neodymium oxide double-bonded on the surface evenly, stir, add 0.2g of formaldehyde, add sulfuric acid dropwise, make the pH of the reaction solution = 7, heat the reaction for 2.5h, wash with water, and extract with methanol , dried in vacuum; added to 120ml N, N-dimethylformamide, ultras...

Embodiment 2

[0040] Step 1: Disperse 10g barium titanate nanoparticles into 20mlH 2 o 2 , ultrasonically disperse, and reflux at 100°C under vigorous mechanical stirring. After the reaction is completed, cool to room temperature and let stand to remove the supernatant, then add a large amount of distilled water to wash repeatedly until neutral, centrifuge and dry. Add it to the mixed solvent of ethanol and water, ultrasonically disperse, add KH-570, add hydrochloric acid dropwise to adjust the pH value, and stir. Wash and centrifuge with ethanol for several times, and dry to obtain nanometer barium titanate with double bonds on the surface.

[0041] Step 2: Mix 10g of nano barium titanate and 6g of neodymium oxide double-bonded on the surface evenly, stir, add 0.2g of formaldehyde, add sulfuric acid dropwise, make the pH of the reaction solution = 7, heat the reaction for 2h, wash with water, extract with methanol, Vacuum drying; adding to 120ml N,N-dimethylformamide, ultrasonically dis...

Embodiment 3

[0048] Step 1: Disperse 10g barium titanate nanoparticles into 20mlH 2 o 2 , ultrasonically dispersed, and refluxed at 110°C under vigorous mechanical stirring. After the reaction is completed, cool to room temperature and let stand to remove the supernatant, then add a large amount of distilled water to wash repeatedly until neutral, centrifuge and dry. Add it to the mixed solvent of ethanol and water, ultrasonically disperse, add KH-570, add hydrochloric acid dropwise to adjust the pH value, and stir. Wash and centrifuge with ethanol for several times, and dry to obtain nanometer barium titanate with double bonds on the surface.

[0049] Step 2: Mix 10g of nanometer barium titanate and 6g of neodymium oxide double-bonded on the surface evenly, stir, add 0.2g of formaldehyde, add sulfuric acid dropwise, make the pH of the reaction solution = 7, heat the reaction for 3h, wash with water, extract with methanol, Vacuum drying; adding to 120ml N,N-dimethylformamide, ultrasonic...

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Abstract

The invention discloses a high-frequency copper-clad substrate with high breakdown strength and a preparation method thereof. BaTiO3 modified by polystyrene is added into the silicon nitride ceramic copper-clad substrate, neodymium oxide is doped, phase change of barium titanate nanoparticles is promoted, and more excellent dielectric performance and breakdown performance can be achieved. And meanwhile, the filler Eu2O3 with high breakdown strength is used for modification, so that the reduction of the breakdown strength caused by doping of the filler with high dielectric constant is relieved. An anti-corrosion layer is plated on the copper surface; when the active metal solder is prepared, silicon nitride particles are added, and the wetting effect of the solder is improved. The ceramic substrate attached with the active metal soldering paste is placed in the malic acid reaction liquid, the malic acid is used for carrying out chemical corrosion on the active metal soldering paste, generation of oxide on the surface of the soldering paste is hindered, and therefore the active metal soldering paste and the ceramic can be better welded.

Description

technical field [0001] The invention relates to the technical field of copper-clad substrates, in particular to a high-frequency copper-clad substrate with high breakdown strength and a preparation method thereof. Background technique [0002] Copper clad laminates undertake the three functions of conductive, insulating and supporting printed circuit boards. Among them, high-frequency copper-clad laminates are a type of PCB substrate materials that are applied at high frequencies with high-speed signal and low-loss transmission characteristics, also known as low-loss copper-clad laminates. High-frequency copper clad laminates and FR-4 copper clad laminates are two types of copper clad laminates that are widely used in the field of mobile communications. Nowadays, the information processing technology with high-level electronic computer as the main body pursues the high speed of information processing, the increase of memory capacity and the miniaturization of volume; the in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/626C04B35/622C04B37/02C25D5/00C25D5/48B32B9/00B32B9/04B32B15/20H05K3/02
CPCC04B35/584C04B35/62605C04B35/622C04B37/023C25D5/00C25D5/48B32B9/005B32B9/041B32B15/20H05K3/022C04B2235/3236C04B2235/3224C04B2237/12C04B2237/52
Inventor 吴海兵陈应峰
Owner 江苏耀鸿电子有限公司