Silicon carbide composite substrate for preparing nitride single crystal film

Abstract

The invention relates to a silicon carbide composite substrate for preparing a nitride single crystal film, which is characterized in that a silicon nitride layer with a flat upper surface is arranged on the surface of the silicon carbide substrate, so that the uneven surface of the silicon carbide substrate is well leveled, and the surface of the substrate becomes smooth and flat; and epitaxial growth of a high-quality nitride single crystal film in the later period is facilitated. In addition, the silicon carbide substrate does not need to be thinned, is large in thickness, and facilitates processing of a later process, so that the quality of the whole finished product is further improved, the yield of the whole production process is improved, the rejection rate is reduced, and the production cost is saved.

Description

technical field [0001] The invention relates to the technical field of silicon carbide new materials, in particular to a silicon carbide composite substrate for preparing a nitride single crystal thin film. Background technique [0002] Silicon carbide, as a semiconductor material used in light-emitting device transistors and semiconductor devices, has a larger band gap than commonly used single crystal silicon. In addition, the silicon carbide substrate has better lattice matching with the nitride semiconductor. These characteristics make nitride semiconductor materials made of silicon carbide substrates have the advantages of high breakdown voltage, good thermal conductivity, and low on-resistance, and have broad market application prospects. [0003] In order to produce high-quality nitride single crystal thin films, silicon carbide substrates with good physical properties and smooth appearance are required. In the prior art, a silicon carbide substrate with a smooth an...

AI Technical Summary

Problems solved by technology

However, due to factors such as the grinding pressure of the grinding machine, the grinding speed, the concentration of the polishing solution, and the pH value, the silicon carbide substrate obtained by this process is often not smooth enough, which affects the quality of the nitride single crystal film.

In addition, the physical grinding process will also lead to thinning of the silicon carbide substrate, especially for reprocessed products, the thinner and thinner the substrate, the thinner the substrate will increase the difficulty of post-processing

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