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Device for removing hexafluorocyclopropane impurity in octafluoropropane and removal method of hexafluorocyclopropane impurity

A technology for hexafluorocyclopropane and octafluoropropane, which is applied in the field of devices for removing hexafluorocyclopropane impurities in octafluoropropane, can solve problems such as difficulty in removing hexafluorocyclopropane, and achieves high conversion efficiency, simple and clear technological process, Easy-to-use effects

Active Publication Date: 2022-05-06
PERIC SPECIAL GASES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The synthesis methods of octafluoropropane mainly include direct fluorination reaction of fluorine gas and activated carbon; electrochemical fluorination reaction of hexafluoropropylene and 1-chloropropane; fluorination reaction of hexafluoropropylene and metal fluoride; hexafluoropropylene and fluorine gas Direct fluorination reaction; reaction between heptafluoropropane and fluorine gas, etc., but in the process of using hexafluorocyclopropane to prepare octafluoropropane, hexafluorocyclopropane is difficult to remove

Method used

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  • Device for removing hexafluorocyclopropane impurity in octafluoropropane and removal method of hexafluorocyclopropane impurity

Examples

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Embodiment 1

[0027] The device for removing hexafluorocyclopropane impurities in octafluoropropane in this embodiment includes an addition tower 8 connected by pipelines, an acid removal tower 18, a drying tower 22 and a purification tower 28, the addition tower 8 The upper end inlet is connected with the high-purity hydrogen chloride gas cylinder 12, the lower end inlet of the addition tower 8 is connected with the crude product octafluoropropane raw material steel cylinder 1, and the drying tower 22 top is connected with a drying tower gas outlet pipeline 24, and the drying tower 22 top is The gas outlet line 24 of the drying tower is connected to the inlet of the purification tower 28, and the gas outlet line 24 of the drying tower is provided with a dust collector 26 and a filter 35 in sequence; , the gas baffles 9 are provided with a heating system with an automatic temperature control device.

[0028] In this embodiment, the outer wall of the crude octafluoropropane raw material cyli...

Embodiment 2

[0034] This embodiment is a method for removing hexafluorocyclopropane impurities in octafluoropropane using the device for removing hexafluorocyclopropane impurities in octafluoropropane in Example 1, including the following steps:

[0035] S1, first open the gas baffle plate 9 to heat the addition tower 8, and then use nitrogen gas with a mass purity of 99.999% to replace the whole device for 3 times. The replacement temperature of the whole device is 60 ° C. After the replacement treatment, the whole The water content of the device is 0.5ppm, then the addition tower 8 is evacuated to a pressure of -0.095MPa, the high-purity hydrogen chloride gas cylinder 12 and the hydrogen chloride gas discharge valve 14 are opened, and the mass is fed through the high-purity hydrogen chloride gas discharge pipeline 13. The hydrogen chloride gas with a purity of 99.999% makes the pressure of the adding tower 8 0.6 MPa, then opens the crude product octafluoropropane raw material steel cylind...

Embodiment 3

[0041] This embodiment is a method for removing hexafluorocyclopropane impurities in octafluoropropane using the device for removing hexafluorocyclopropane impurities in octafluoropropane in Example 1, including the following steps:

[0042] S1, first open the gas baffle 9 to heat the addition tower 8, and then use helium gas with a mass purity of 99.999% to replace the whole device 5 times. The replacement temperature of the whole device is 150 ° C. After the replacement treatment The water content of the whole device is 0.4ppm, then the addition tower 8 is evacuated to a pressure of -0.098MPa, the high-purity hydrogen chloride gas cylinder 12 and the hydrogen chloride gas discharge valve 14 are opened, and the high-purity hydrogen chloride gas discharge pipeline 13 is passed into Hydrogen chloride gas with a mass purity of 99.999% makes the pressure of the addition tower 8 2 MPa, then opens the crude product octafluoropropane raw material steel cylinder 1, feed valve 4 and fl...

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Abstract

The invention discloses a device for removing hexafluorocyclopropane impurities in octafluoropropane, the device comprises an addition tower, a deacidification tower, a drying tower and a purification tower which are arranged in sequence, the upper end inlet of the addition tower is connected with a high-purity hydrogen chloride gas steel cylinder, and the lower end inlet of the addition tower is connected with a crude product octafluoropropane raw material steel cylinder; the invention also provides a removal method using the device, which comprises the following steps: heating the addition tower, replacing the whole device with inert gas, vacuumizing the addition tower, and introducing hydrogen chloride gas and crude octafluoropropane gas to react in the addition tower to obtain mixed gas; introducing the mixed gas into a deacidification tower to remove acidic gas to obtain deacidified gas; and introducing the deacidified gas into a drying tower to remove moisture, and then sequentially introducing the deacidified gas into a filter, a dust remover and a purification tower to obtain the high-quality octafluoropropane. The method is simple in technological process and easy and convenient to operate, high-purity industrial octafluoropropane is finally obtained, and industrial production is easy to achieve.

Description

technical field [0001] The invention belongs to the technical field of gas impurity removal, and in particular relates to a device for removing hexafluorocyclopropane impurities in octafluoropropane and a removal method thereof. Background technique [0002] Octafluoropropane, molecular formula C 3 f 8 , is a toxic, colorless gas that is insoluble in water. In the semiconductor industry, the mixed gas of octafluoropropane and oxygen can be used as a plasma etching material, which can selectively interact with the metal substrate of the silicon wafer, and can be used on the surface of the device cleaning. [0003] The synthesis methods of octafluoropropane mainly include direct fluorination reaction of fluorine gas and activated carbon; electrochemical fluorination reaction of hexafluoropropylene and 1-chloropropane; fluorination reaction of hexafluoropropylene and metal fluoride; hexafluoropropylene and fluorine gas Direct fluorination reaction; reaction between heptafluo...

Claims

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Application Information

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IPC IPC(8): C07C17/395C07C19/08
CPCC07C17/395C07C19/08Y02P20/10
Inventor 王云飞尚青蒋玉虎邢海洋苏子杰路璐滕莹路光辉
Owner PERIC SPECIAL GASES CO LTD
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