High-temperature high-power supercapacitor based on porous wide bandgap semiconductor material and preparation method thereof
A wide-bandgap semiconductor and supercapacitor technology, which is applied in the field of high-temperature and high-power supercapacitors and its preparation, can solve the problems of restricting the electrode material and electrolyte to fully contact with the fast charge transfer, hindering electron/ion transfer, and poor energy density. Achieve the effect of improving reaction kinetics and transmission rate, maintaining stable crystal material structure, and excellent power density
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Embodiment 1
[0036] Example 1 Preparation of Porous 4H-SiC Single Crystal
[0037] (1) Provide an N-doped 4H-SiC material with a microtube structure, as shown in the electron microscope figure 1 As shown, the N-doped 4H-SiC material with micropipe structure can effectively improve the specific surface area and conductivity of electrode materials; the N-doped 4H-SiC wafer with micropipe structure is cut into rectangular wafers of 1×1.5cm , placed in acetone, ethanol, and deionized water for ultrasonication, the ultrasonic time was 30 minutes, and the ultrasonic power was 500W;
[0038] (2) The N-doped 4H-SiC wafer after cleaning was immersed in a mixed solution of hydrofluoric acid and ethanol for 3 minutes to remove the surface oxide layer. The mixed solution was 40% hydrofluoric acid solution and 99% mass concentration The ethanol solution is obtained by mixing the volume ratio of 1:1;
[0039] (3) NH 4HF was dissolved in 50mL deionized water to prepare a saturated solution. The N-dope...
Embodiment 2
[0043] Preparation of porous N-doped 4H-SiC single crystal as described in Example 1, the difference is:
[0044] In step (3), the constant voltage electrochemical corrosion voltage is 18V, and the time is 4 minutes,
[0045] In step (4), the constant current electrochemical corrosion current is 120mA, and the etching time is 20 minutes.
Embodiment 3
[0047] Preparation of porous N-doped 4H-SiC single crystal as described in Example 1, the difference is:
[0048] In step (3), the constant voltage electrochemical corrosion voltage is 15V, and the time is 4 minutes,
[0049] In step (4), the constant current electrochemical corrosion current is 120mA, and the etching time is 30 minutes.
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