Halide perovskite nano material and preparation method thereof

A halide perovskite, nanomaterial technology, applied in chemical instruments and methods, luminescent materials, nanotechnology, etc., can solve the problem of low stability, poor environmental tolerance, and low generation rate of perovskite quantum dots and other problems, to achieve the effects of low cost, outstanding environmental tolerance, and narrow half-peak width

Pending Publication Date: 2022-05-20
EAST CHINA UNIV OF SCI & TECH
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a halide perovskite nanomaterial and its preparation in order to overcome the defects of low perovskite quantum dot generation rate, low stability and poor environmental tolerance in the prior art method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Halide perovskite nano material and preparation method thereof
  • Halide perovskite nano material and preparation method thereof
  • Halide perovskite nano material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] CsPbBr 3 Preparation of / MS composites

[0070] (1) 0.1mmol lead bromide and 0.1mmol cesium bromide solid powder and 0.8mmol mesoporous silica powder into the grinder, fully ground, solid mixing, to obtain a homogeneous mixture;

[0071] (2) Under an argon atmosphere, the homogeneous mixture obtained in step (1) was heated up at 5 °C / min, melted at 600 °C for 120 min, cooled down at 10 °C / min, and mesoporous silica / perovskite composite materials were formed by cooling crystallization;

[0072] (3) The mesoporous silica / perovskite composite material obtained in step (2) is placed in a muffle furnace, and under an air atmosphere, it is heated at 1 °C / min, insulation at 550 °C for 240 min, and cooled at 10 °C / min;

[0073] (4) The powder obtained in step (3) is placed in saturated sodium sulfate solution, wherein the mass ratio of the powder to saturated sodium sulfate solution is 1:100, stirred at room temperature for 10 hours, centrifuged / washed, precipitated to obtain the...

Embodiment 2

[0075] (1) Put 0.1mmol lead chloride and 0.1mmol cesium chloride solid powder with 1.0mmol mesoporous silica powder into a grinder, grind it thoroughly, mix the solids, and obtain a homogeneous mixture;

[0076] (2) Under an argon atmosphere, the homogeneous mixture obtained in step (1) was heated up at 5 °C / min, melted at 570 °C for 100 min, cooled down at 10 °C / min, and mesoporous silica / perovskite composites were formed by cooling crystallization;

[0077] (3) The mesoporous silica / perovskite composite material obtained in step (2) is placed in a muffle furnace, heated up at 3 °C / min under an air atmosphere, insulation at 550 °C for 200 min, cooled down at 10 °C / min, and oxidized the perovskite nanocrystals exposed to the surface;

[0078](4) The powder obtained in step (3) is placed in saturated sodium sulfate solution, wherein the mass ratio of the powder to saturated sodium sulfate solution is 1:100, the reaction is stirred at room temperature for 8 hours, centrifugation / w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a halide perovskite nano material and a preparation method thereof, and the preparation method comprises the steps: carrying out the melting and crystallization of a mixture of a perovskite precursor and a mesoporous material, removing the perovskite nanocrystal on the surface of the material, and forming an isolation layer on the surface of the material through an inorganic matter, wherein the perovskite precursor is cesium halide and lead halide; the melting temperature is 450 to 650 DEG C. The preparation method of the halide perovskite nano material is simple to operate, low in cost, high in product generation rate and high in synthesis speed, and an organic solvent and an organic ligand do not need to be added; the halide perovskite nano material has the advantages of high luminous intensity, narrow half-peak width, high luminous color purity, capability of covering the whole visible light region by the luminous wavelength and good environmental tolerance.

Description

Technical field [0001] The present invention relates to a halide perovskite nanomaterial and a method for preparing it. Background [0002] Halide perovskite materials have been widely used in photovoltaic cells, lasers and light-emitting diodes and other optoelectronic devices due to their tunable luminescent spectrum in the visible region, high carrier migration rate, high fluorescence quantum yield, and half-height and wideness of the emission spectrum. However, due to the poor environmental stability of halide perovskite materials, different degrees of degradation will occur in light, heat and air, which seriously limits its practical application. [0003] At present, common methods to improve the stability of halide perovskite materials are ion doping, organic ligand modification and inorganic surface modification. [0004] The method of ion doping is simple, not only can appropriately improve the stability, but also can adjust the photoelectric properties of perovskite quan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/66B82Y30/00B82Y20/00
CPCC09K11/025C09K11/665B82Y20/00B82Y30/00Y02E10/549
Inventor 朱以华杨婷玉沈建华江宏亮孟楠朱启亮
Owner EAST CHINA UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products