Silicon-based high-speed perovskite light source and preparation method thereof
A technology of perovskite and cesium-lead-bromide perovskite, which is applied in the field of silicon-based high-speed perovskite light source and its preparation, can solve the problems of large Auger recombination constant, poor thermal conductivity of perovskite, device aging and failure, etc. , to achieve the effects of reducing luminescence quenching, increasing the current density range, and improving heat dissipation management
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[0036] The present invention also provides a preparation method of a silicon-based high-speed perovskite light source, comprising the following steps:
[0037] S1 provides a silicon base layer;
[0038] S2 prepares a strip-shaped gold electrode layer, uses a magnetron sputtering coating system and a mask, and coats a 200nm-thick gold layer on the silicon-based designated area substrate;
[0039] S3 carries out ultraviolet ozone treatment on the strip-shaped gold electrode; the preferred treatment is 20 minutes;
[0040] S4 prepares the hole transport layer, preferably using PEDOT:PSS to spin-coat on the substrate after S3 treatment, and bake in a vacuum box; preferably bake in a vacuum box at 150°C for 40 minutes;
[0041] S5 prepares a methyl-cesium lead bromide perovskite layer, and after the substrate treated in S4 is cooled, it is transferred to a nitrogen glove box, and the methyl-cesium lead bromide perovskite precursor solution is used for spin coating on the substrate...
Embodiment 1
[0052] The preparation method of the silicon-based high-speed perovskite light source of the present embodiment is as follows:
[0053] S1 provides a silicon base layer;
[0054] S2 prepares a strip-shaped gold electrode layer, uses a magnetron sputtering coating system and a mask, and coats a 200nm-thick gold layer on the silicon-based designated area substrate;
[0055] S3 performs ultraviolet ozone treatment on the strip-shaped gold electrode layer for 20 minutes;
[0056] The PEDOT:PSS hole transport layer was prepared from S4, spin-coated on the S3-treated substrate with PEDOT:PSS, and baked at 150 °C for 40 minutes in a vacuum box, with a thickness of about 40 nm;
[0057] The methyl-cesium lead bromide perovskite layer was prepared in S5, and after the substrate treated in S4 was cooled, it was transferred to a nitrogen glove box, and the methyl-cesium lead bromide perovskite precursor solution was used for spin coating on the substrate, and the Annealed on the substrat...
Embodiment 2
[0061] The preparation method of the silicon-based high-speed perovskite light source of the present embodiment is as follows:
[0062] S1 provides a silicon base layer;
[0063] S2 prepares a strip-shaped gold electrode layer, uses an electron beam evaporation coating system and a mask, and coats a 200nm-thick gold layer on the silicon-based designated area substrate;
[0064] S3 performs oxygen plasma treatment on the strip-shaped gold electrode layer for 10 minutes;
[0065] The PEDOT:PSS hole transport layer was prepared from S4, spin-coated on the S3-treated substrate with PEDOT:PSS, and baked at 150 °C for 40 minutes in a vacuum box, with a thickness of about 40 nm;
[0066] The methyl-cesium lead bromide perovskite layer was prepared in S5, and after the substrate treated in S4 was cooled, it was transferred to a nitrogen glove box, and the methyl-cesium lead bromide perovskite precursor solution was used for spin coating on the substrate, and the Annealed on the subs...
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Abstract
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