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SNS Josephson junction based on MoN and preparation method thereof

A junction barrier and top electrode technology, applied in the field of superconducting electronics, can solve the problems of large interface diffusion, unclear interface, and small interlayer reaction characteristic voltage, and achieve stable resistivity, high surface smoothness, and avoid layer The effect of interdiffusion

Pending Publication Date: 2022-05-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a MoN-based SNS Josephson junction and a preparation method thereof, which are used to solve the problems of large interface diffusion, unclear interface, and interlayer junction of SNS junctions in the prior art. The problem of small characteristic voltage caused by the reaction

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  • SNS Josephson junction based on MoN and preparation method thereof
  • SNS Josephson junction based on MoN and preparation method thereof
  • SNS Josephson junction based on MoN and preparation method thereof

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Embodiment 1

[0053] This embodiment provides a method for preparing a MoN-based SNS Josephson junction, such as figure 1 As shown, it is shown as a flow chart of the preparation method of the SNS Josephson junction, comprising the following steps:

[0054] S1: providing a substrate;

[0055] S2: Form a functional material layer on the substrate, the functional material layer includes a stacked NbN bottom layer film, a MoN barrier layer, and a NbN top layer film, wherein the method for forming the MoN barrier layer includes DC reactive magnetron Sputtering method;

[0056] S3: Etching the functional material layer to form a bottom electrode, a MoN junction barrier layer, and a top electrode, and forming an isolation layer covering exposed surfaces of the bottom electrode, the MoN junction barrier layer, and the top electrode;

[0057] S4: forming a first contact hole and a second contact hole in the isolation layer, and the bottom of the first contact hole exposes the top electrode, and t...

Embodiment 2

[0096] This embodiment provides a MoN-based SNS Josephson junction, such as Figure 8 As shown, it is a schematic cross-sectional structure diagram of the SNS Josephson junction, and the MoN-based SNS Josephson junction is manufactured by using the preparation method of the MoN-based SNS Josephson junction described in Example 1.

[0097] Specifically, the MoN-based SNS Josephson junction includes the substrate 1, the bottom electrode 211, the MoN junction barrier layer 221, the top electrode 231, the isolation layer 3, the first The wiring part 41 and the second wiring part 42, wherein the substrate 1, the bottom electrode 211, the MoN junction barrier layer 221 and the top electrode 231 are stacked upwards, and the isolation layer 3 covering the exposed upper surface and side surfaces of the substrate 1, the bottom electrode 211, the MoN junction barrier layer 221 and the top electrode 231, and the bottom of the isolation layer 3 is provided to expose the top electrode The ...

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Abstract

The invention provides a MoN-based SNS Josephson junction and a preparation method thereof.The preparation method of the MoN-based SNS Josephson junction comprises the following steps that a substrate is provided, a NbN bottom layer film, a MoN barrier layer and a functional material layer of a NbN top layer film which are stacked are formed on the substrate, the MoN barrier layer is formed through a direct current reaction magnetron sputtering method, and the MoN top layer film is formed on the MoN barrier layer; etching the functional material layer to form a bottom electrode, a MoN junction barrier layer and a top electrode, forming an isolation layer covering the exposed surfaces of the bottom electrode, the MoN junction barrier layer and the top electrode, forming a first contact hole and a second contact hole in the isolation layer, and forming a wiring layer covering the isolation layer and filling the first contact hole and the second contact hole, the wiring layer is etched to form a first wiring portion and a second wiring portion. The MoN barrier layer is formed by adopting a direct current reaction magnetron sputtering method, the MoN barrier layer with stable resistivity is obtained, and the quality of the Josephson junction is improved.

Description

technical field [0001] The invention belongs to the field of superconducting electronics, and relates to a MoN-based SNS Josephson junction and a preparation method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of transistors is approaching the physical limit size, Moore's Law is about to fail, and digital computing has encountered bottlenecks in energy consumption and speed. The superconducting single flux quantum (SFQ) circuit was discovered, which mainly uses the superconducting Josephson junction as a switch to represent logic information by whether there is a single flux quantum in the superconducting loop. Compared with the high and low level encoding method of traditional semiconductor CMOS circuits, superconducting SFQ circuits have quantized signal accuracy, and the reconfigurable data path based on SFQ circuits has a processor clock frequency of up to 23GHz, while power consumption is only 4.1mW , ha...

Claims

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Application Information

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IPC IPC(8): H01L39/24H01L39/22H01L39/12
CPCH10N60/85H10N60/12H10N60/0241H10N60/0912
Inventor 张露陈垒王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI