Preparation method of high-purity and high-density GaTe target material
A high-density, high-purity technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of rare reports on the preparation of high-purity gallium telluride targets, complex crystal structure, etc. The effect of fine particle size, good composition uniformity and high density
Pending Publication Date: 2022-06-21
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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Problems solved by technology
The appropriate energy band width makes it potentially useful in solar window materials and room temperature radiation detection, but because of its complex crystal structure, the structure of GaTe still needs to be further studied
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment 1
[0030] The crystal structure is tested by XRD (full name is X-ray diffraction, referring to X-ray diffraction instrument).
[0031] The XRD analysis pattern of the target is as follows figure 2As can be seen from the figure, compared with the standard card PDF#75-2220, the gallium telluride target prepared by this method has very good crystallinity, no other phases are produced, and it is a single-phase material.
[0032] Example 2
A method for preparing a high-purity, high-density GaTe target, comprising:
(1) Select 5N gallium particles and 6N tellurium particles as raw materials, according to the atomic ratio Ga:Te=1:1 ratio, use an electronic scale in the glove box to accurately weigh the raw materials and put them into a clean quartz tube. Then place the quartz tube at a constant temperature of 150°C and vacuumize to 1x10 -3 After Pa, oxyhydrogen welding is used to weld and seal the nozzle of the quartz tube. Then use ZKJL-1 high-frequency electric spark vacuum leak...
Embodiment 2
Embodiment 3
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Abstract
The invention provides a preparation method of a high-purity and high-density GaTe target material, which comprises the following steps: by taking high-purity Ga and Te particles as raw materials, putting a quartz tube into a glove box, vacuumizing the quartz tube, and then welding and sealing; putting the quartz tube into a rocking furnace, fixing, smelting, taking out the quartz tube above an alloy melting point after smelting, and quenching to obtain a GaTe alloy ingot; the GaTe alloy ingot is crushed into alloy particles, then the alloy particles are crushed into powder in a glove box, and GaTe alloy powder is obtained after powder screening; and the alloy powder is pre-pressed to obtain an alloy blank, then vacuum hot pressing sintering is carried out to obtain a GaTe alloy blank, and the GaTe alloy blank is processed to obtain the GaTe alloy target material. The prepared target material is high in density, high in purity, single in phase, good in component uniformity, low in oxygen content and capable of well meeting requirements, and the problem that impurity phases are generated when a GaTe target material is prepared through an existing method is solved.
Description
technical field [0001] The invention belongs to the technical field of alloy targets, and in particular relates to a preparation method of high-purity and high-density GaTe targets. Background technique [0002] GaTe materials belong to III-VIIA group compound semiconductors, have large atomic coefficient and suitable band gap, and have high value in the fields of optoelectronic devices, radiation detection and solar cells. The appropriate energy band width makes it potentially useful in solar window materials and room temperature radiation detection, but because of its complex crystal structure, the structure of GaTe still needs to be further studied. [0003] At present, there have been many reports on the growth of gallium telluride crystals, but there are few reports on the preparation of high-purity gallium telluride targets. Contents of the invention [0004] The technical problem to be solved by the present invention is to overcome the deficiencies and defects ment...
Claims
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Patent Timeline
Login to View More IPC IPC(8): C23C14/34B22F3/10B22F3/15B22F5/00
CPCC23C14/3414B22F5/00B22F3/15B22F3/1007B22F2999/00B22F2201/20
Inventor 沈文兴白平平童培云
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD