Gallium oxide field effect transistor power device with novel structure

Abstract

The invention belongs to the technical field of semiconductors, and particularly provides a gallium oxide field effect transistor power device with a novel structure, which comprises a gallium oxide transverse field effect transistor with high withstand voltage and low specific on-resistance, a gallium oxide junction field effect transistor with positive threshold voltage and small leakage current, and a gallium oxide transverse field effect transistor with high withstand voltage and low specific on-resistance. The gallium oxide insulated gate field effect transistor power device has high withstand voltage, positive threshold voltage and small leakage current; a high-K dielectric layer is adopted to obtain higher withstand voltage under the same drift region length, or a P-type diamond (or aluminum nitride, nickel oxide) region is introduced to improve the withstand voltage of the transverse field effect power transistor under the same drift region length and higher drift region doping concentration, and the specific on-resistance is reduced; moreover, a P-type diamond (or aluminum nitride or nickel oxide) region is used for replacing a traditional metal gate material to obtain a device with positive threshold voltage and small leakage current, and the introduction of diamond and aluminum nitride also improves the heat dissipation capability and improves the performance of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and specifically provides a novel structure of gallium oxide (Ga 2 O 3 ) field effect transistor power devices, involving lateral devices and vertical devices. Background technique [0002] As a new type of semiconductor material, gallium oxide has an ultra-wide band gap (4.8eV) that is more than 4 times that of silicon (1.1eV), so it can be used in more severe working environments (such as high temperature and irradiation). More stable performance, can be used to manufacture high-power radiation-resistant devices; and, the theoretical critical breakdown electric field of gallium oxide material is 8MV / cm, much higher than 0.3MV / cm of silicon, so gallium oxide has a higher Withstand voltage rating; electron saturation velocity in gallium oxide (2×10 7 cm / s) is twice that of silicon, which makes gallium oxide devices have higher current density and high switching speed; since the Barriga ...

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Problems solved by technology

[0003] Based on the above advantages, gallium oxide devices have attracted the attention of researchers; however, there are also some problems that cannot be ignored in the application process of gallium oxide, for example: the thermal conductivity of gallium oxide is only 0.27W·cm -1 ·K -1 , so the heat dissipation performance is extremely poor, which affects the application of power devices under high-voltage and high-current conditions, which requires a good heat dissipation design for the device in application, and further reduces the specific on-resistance of the device to reduce losses; in addition, gallium oxide is used as A semiconductor material that currently only has N-type doping, but has developed an effective P-type doping, which makes the withstand voltage effect of the device's withstand voltage terminal or the lateral drift region of the lateral device unsatisfactory, and it cannot achieve better performance. P-type gallium oxide-N-type gallium oxide superjunction structure, etc., which greatly limits the development of gallium oxide power devices

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