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Method for realizing back metallization of ITO (Indium Tin Oxide) target material by cold spraying

A technology of backside metallization and cold spraying, which is applied in metal material coating process, coating, superimposed layer plating, etc. Effect

Pending Publication Date: 2022-08-02
亚芯半导体材料(江苏)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for metallizing the back of an ITO target by cold spraying to solve the problem of difficult brazing of ITO ceramic targets and copper back plates as heterogeneous materials

Method used

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  • Method for realizing back metallization of ITO (Indium Tin Oxide) target material by cold spraying

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The 4N metal indium powder is sent into the cold spraying equipment, and the accelerated protective gas nitrogen is introduced. The ITO target was first cleaned with 10% oxalic acid for 10 minutes, then washed with acetone for 5 minutes, and then placed in ultrapure water for ultrasonic cleaning for 20 minutes. After drying, the ITO target was fixed on the workpiece frame of the cold spraying equipment, and started. The function of cold spraying equipment is adjusted and controlled to accelerate the protective gas temperature to 110 °C, the powder feeding flow to 10 g / min, the inert nitrogen flow to 0.3 m³ / min, the compressed gas working pressure to 0.5 MPa, and the distance from the nozzle to the substrate to be 15 mm; The deposition is carried out under the process parameters of the moving speed of 50mm / s. After the deposition is completed, the target is taken out from the sprayer, and the surface of the target is cleaned with ethanol for 10 minutes to remove the conta...

Embodiment 2

[0032]The 4N metal indium powder is sent into the cold spraying equipment, and the accelerated protective gas nitrogen is introduced. The ITO target was first cleaned with 10% oxalic acid for 10 minutes, then cleaned with acetone for 5 minutes, and then placed in ultrapure water for ultrasonic cleaning for 20 minutes. After drying, the ITO target was fixed on the workpiece frame of the cold spraying equipment, and started. The function of cold spraying equipment is adjusted and controlled to accelerate the protective gas temperature to 100 °C, the powder feeding flow to 15 g / min, the inert nitrogen flow to 0.4 m³ / min, the compressed gas working pressure to 0.6 MPa, and the distance from the nozzle to the substrate to be 20 mm; The deposition is carried out under the process parameters of the moving speed of 70mm / s. After the deposition is completed, the target is taken out from the sprayer, and the surface of the target is cleaned with ethanol for 10 minutes to remove the pollu...

Embodiment 3

[0034] The 4N metal indium powder is sent into the cold spraying equipment, and the accelerated protective gas nitrogen is introduced. The ITO target was first cleaned with 10% oxalic acid for 10 minutes, then cleaned with acetone for 5 minutes, and then placed in ultrapure water for ultrasonic cleaning for 20 minutes. After drying, the ITO target was fixed on the workpiece frame of the cold spraying equipment, and started. The function of cold spraying equipment is adjusted and controlled to accelerate the protective gas temperature to 100 °C, the powder feeding flow to 20 g / min, the inert nitrogen flow to 0.5 m³ / min, the compressed gas working pressure to 0.8 MPa, and the distance from the nozzle to the substrate to be 30 mm; The deposition is carried out under the process parameters of the moving speed of 90mm / s. After the deposition is completed, the target is taken out from the sprayer, and the surface of the target is cleaned with ethanol for 10 minutes to remove the poll...

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Abstract

The invention belongs to the technical field of semiconductor integrated circuits, and particularly relates to a method for realizing back metallization of an ITO (indium tin oxide) target material by cold spraying, which comprises the following steps: S1, pretreating the ITO target material, and mounting and fixing the ITO target material; s2, the metal indium powder is loaded into a cold spraying machine, and protective gas is introduced into the cold spraying machine; s3, forming a gas-solid two-phase flow through supersonic airflow and metal indium powder, accelerating impact on the back surface of the pretreated ITO target material, and forming a coating; s4, the ITO target material with the coating is connected with a copper back plate through brazing; according to the method for realizing metallization of the back surface of the ITO target material through cold spraying, the pretreated ITO target material is subjected to cold spraying, so that target material matrix metal indium is not influenced by high temperature, meanwhile, the temperature is controlled to enable a metal layer and a substrate to have enough binding force, the utilization rate of raw materials is improved, the ITO target material metallization speed is high, the efficiency is high, and the method is suitable for industrial mass production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a method for realizing backside metallization of an ITO target by cold spraying. Background technique [0002] ITO (indium tin oxide) targets are widely used in flat-panel displays, solar cells and other fields. During the preparation of ITO thin films, the working state of the ITO target has an important impact on the quality of the prepared thin films. [0003] The ITO target needs to be continuously bombarded by high-energy argon ions during sputtering, and also needs to maintain a high-strength connection with the copper backplane under high vacuum conditions. On the one hand, the copper backing plate plays a supporting role for the target material. In addition, the heat generated by the target material during operation needs to be dissipated in time through the copper backing plate and cooling water, so as to avoid the back plate falling...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C24/04C23C28/00C23C14/08
CPCC23C14/35C23C14/086C23C24/04C23C28/32C23C28/345Y02P70/50
Inventor 徐从康马赛陈箫箫
Owner 亚芯半导体材料(江苏)有限公司
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