The invention provides a device and method of preparing n-type doped diamond through microwave plasma-hot filament composite chemical vapor deposition. The device comprises a microwave plasma source system, a hot lamp filament reaction chamber improvement system, a vacuum pumping system and a tail gas treatment system. The microwave plasma source system comprises a microwave source, a three-screwimpedance tuner, a waveguide mode converter, an antenna unit, a waveguide tube and a quartz window. The waveguide mode converter is connected with the microwave source through the three-screw impedance tuner. The hot lamp filament reaction chamber improvement system comprises a resonant cavity, a gas inlet hole, a deposition platform, a plasma, an inert gas hole, a water-cooling channel, a graphite lining, hot lamp filaments, a mirror plane steel plate, partitioned cooling pipes and a gas outlet hole. The waveguide tube is connected with the resonant cavity through the quartz window. The device provided by the invention integrates an MPCVD device and an HFCVD device, adopts the microwave source as a reaction heat source and the hot lamp filament as an annealing heat source to cooperate with the graphite lining to maintain the annealing temperature and improves the preparation efficiency and quality of the n-type doped diamond.