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Susceptor for semiconductor manufacturing equipment and process for producing the same

A technology for holding bodies and silicon wafers, which is applied in semiconductor/solid-state device manufacturing, manufacturing tools, chemical instruments and methods, etc., and can solve problems such as the impossibility of obtaining dense products and difficulties in sintering

Inactive Publication Date: 2004-08-25
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the added amount of the sintering aid is too small, sintering becomes difficult, causing a problem that it is impossible to obtain a dense product

Method used

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  • Susceptor for semiconductor manufacturing equipment and process for producing the same
  • Susceptor for semiconductor manufacturing equipment and process for producing the same
  • Susceptor for semiconductor manufacturing equipment and process for producing the same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0045] AlN powder having an average particle size of 0.8 μm, an oxygen content of 1% by weight and a cationic impurity content of not more than 0.3% by weight; yttrium oxide powder and yttrium stearate powder having an average particle size of 0.3 μm, as a sintering aid; and PVB as an organic binder. Weigh AlN powder and sintering aid powder in this way, as shown in Table 1, replace the total amount of sintering aid with the weight of Y element, and the rest is AlN by weight. As an organic binder, 3% by weight of PVB based on their total weight (100% by weight) was weighed. Then, they were mixed in an ethanol solution with nylon balls using a ball mill in an alumina tank over 12 hours. The resulting slurry was spray-dried and granulated into substantially round granules, wherein the proportion of particles with an average particle size of 80 μm was about 20% by weight, and the proportion of particles with an average particle size of 200 μm was about 20% by weight. 80% of (gr...

example 2

[0062] The same AlN powder as in Example 1 was prepared, and as a sintering aid, yttrium oxide had an average particle size of 0.4 μm, neodymium oxide powder had an average particle size of 0.3 μm, lanthanum oxide powder had an average particle size of 0.3 μm and calcium oxide powder had an average particle size of 0.3 μm; and PVB as an organic binder. The AlN powder and the sintering aid were weighed in such a manner that the weight of the sintering aid was shown in Table 5 in terms of the respective elements, and the total amount thereof was 0.8 parts by weight, and the remainder was AlN. And, as organic, PVB was weighed as 10% based on its total amount (100%). They were mixed with nylon balls in ethanol solvent in the alumina tank of the ball mill for 12 hours. The resulting slip was spray dried. Granulated substantially round granule state in which about 20% by weight of granules with an average particle size of 70 μm and about 78% by weight of granules with an average p...

example 3

[0067] Using trimmed substrates or substrate samples of the molded body of Example 1, holders were fabricated for testing by laminating multiple sheets of these samples. For lamination into these substrate samples with the material of the intercalation layer, a high-melting-point metal layer to which the low-melting-point glass composition shown in Table 6 was added and a conductive paste containing various compositions shown in Table 7 were prepared. The values ​​in Table 6 are the weight of each high-melting-point metal layer in the conductive adhesive after the volatile components are discharged during sintering, while the rest of the high-melting-point metal, that is, W, Mo and Ta is basically the total amount of glass components . Therefore, in the case of sample b of this example, the total amount of the glass component in the refractory metal layer is 50% by weight.

[0068] insert layer

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Composition and content (weight% of content)

Rati...

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Abstract

A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 mu m. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000 DEG C and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700 DEG and finishing the fired laminate.

Description

technical field [0001] The present invention relates to a holder for holding a semiconductor raw material by means of static electricity, and more specifically, a holder for a semiconductor manufacturing device formed by laminating a plurality of aluminum nitride ceramic substrates with a high melting point metal layer and an adhesive layer , the holder is used for surface treatment of silicon semiconductor wafer materials. Background technique [0002] In the manufacture of LSI, an integrated circuit with a fine wiring pattern is formed on the surface of a silicon semiconductor wafer. In order to realize electrical insulation between wiring patterns, various CVD methods such as plasma CVD, atmospheric pressure CVD, etc. are used to form insulating films such as silicon dioxide and silicon nitride. Hereinafter, this is called "surface treatment". In this surface treatment, the wafers are handled individually and a holder is required for holding the wafers. Here, the case ...

Claims

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Application Information

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IPC IPC(8): H01L21/683C04B35/581C04B37/02C23C16/458C30B25/12C30B31/14H02N13/00
CPCC04B2235/3206C04B35/6263C04B2235/36Y10S428/901C04B41/009C04B2237/66C04B35/111C04B2235/449C04B2235/3895C04B35/62695C04B2235/3418C04B35/62655C04B2235/85C04B2235/9615C04B2237/366C04B2235/963C04B2235/3208C04B2237/343C04B2235/72C23C16/4581C04B2235/6565C04B2235/3227C04B2235/528C04B2235/604C04B2235/5427C04B2235/9638C04B2235/5445C04B2235/602B32B2315/02C04B2237/10C04B2235/3865C04B37/006C04B37/005C04B2235/6567C04B2235/6025B32B37/12C04B2235/77C04B2235/608C30B31/14C04B2235/9607C04B2237/72C30B25/12C04B2235/3224C04B35/6342C04B2237/08C04B35/581C04B41/85C04B2235/5481C04B41/5001C04B35/638C04B2237/122C04B2235/786C04B2235/656C04B2235/94C04B2235/5436C04B2235/3225C04B2235/6021Y10T428/12542Y10T428/12549Y10T428/24926Y10T428/252Y10T428/30C04B41/4531C04B41/53B32B18/00H01L21/20
Inventor 汤盐泰久仲田博彦夏原益宏
Owner SUMITOMO ELECTRIC IND LTD
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