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Method for preparing coplanar grid anode tellurium-zinc-cadmium detector

A cadmium zinc telluride and detector technology, applied in semiconductor/solid-state device manufacturing, semiconductor device, radiation intensity measurement, etc., can solve problems such as low hole collection efficiency, and achieve improved overall performance, complete electrode pattern, and contact adhesion. high effect

Inactive Publication Date: 2007-07-25
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another object of the present invention is to overcome the defect of low hole collection efficiency of CZT materials, obtain a coplanar grid anode with complete electrode pattern and high contact adhesion, make the electrode and CdZnTe crystal form an ohmic contact, and finally improve the CZT detector. Comprehensive performance

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  • Method for preparing coplanar grid anode tellurium-zinc-cadmium detector

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Embodiment 1

[0015] Embodiment 1: The preparation method of the coplanar grid anode CdZnTe detector in this embodiment is as follows:

[0016] a. Surface treatment of CdZnTe crystal: the cut size is 10×10×10mm 3 Yes, the cubic wafer with the crystal plane direction of (111) is roughly polished with corundum, and the obvious concave-convex damage on the surface of the CZT wafer is smoothed, and the surface is smooth without scratches and wire drawing. Then clean, put into a beaker filled with deionized water and vibrate ultrasonically for 5 minutes to remove the surface contamination and impurity particles adsorbed on the surface of the wafer during rough polishing, and then use the particle size of 1um and 0.5um on the grinder in turn , 0.2um corundum micropowder polishing solution to finely polish the CZT wafer until the surface of the wafer is mirror-like. Ultrasonic vibration was used again to remove surface impurities, and the wafer was immersed in anhydrous methanol to be etched. Th...

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Abstract

The present invention belongs to the field of semiconductor nuclear detector manufacture technology. The coplanar Te-Zn-Cd detector consists of Te-Zn-Cd crystal, anode and cathode. The preparation process of the detector includes the following steps: cutting crystal in (111) direction and certain size; surface treatment through polishing, surface chemical etching and cleaning; making electrodes including two coplanar interdigital anodes and one planar cathode through vacuum evaporation of Cr-Au alloy and deposition and photoetching, and leading out the electrodes with gold wire; and final surface deactivation. The detector of the present invention has excellent ray energy resolution.

Description

technical field [0001] The invention relates to a method for preparing a coplanar grid anode cadmium zinc telluride detector, belonging to the technical field of semiconductor crystal nuclear detector manufacturing technology. Background technique [0002] Semiconductor detector is a new type of nuclear radiation detection element that has been developed rapidly since the 1960s. Its characteristics are: high energy resolution, good linear response, short pulse rise time, simple structure, high detection efficiency, and low operating voltage. , easy to operate. Since the first use of germanium (Ge) semiconductors to detect particles in Bell Telecom and Telephone Laboratories in the United States in 1949, this detector immediately attracted the attention of countries all over the world. Since the 1970s, with the continuous improvement of the preparation process of silicon (Si) materials and the semiconductor plane process, Si detectors have been developed rapidly, especially ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/24B24C1/08C23C22/64H01L21/47H01L31/00
Inventor 桑文斌王昆黍闵嘉华张奇腾建勇钱永彪
Owner SHANGHAI UNIV