Photo-electric equipment and batch spherical semiconductor grain producing equipment

A technology of optoelectronic equipment and semiconductors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, crystal growth, etc., and can solve problems such as poor cost reduction

Inactive Publication Date: 2002-07-10
CLEAN VENTURE 21
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] This prior art requires much time and labor to manufacture spherical semiconductor particles, and thus is inferior in cost reduction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photo-electric equipment and batch spherical semiconductor grain producing equipment
  • Photo-electric equipment and batch spherical semiconductor grain producing equipment
  • Photo-electric equipment and batch spherical semiconductor grain producing equipment

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0213] About 1.5 ml of silicon material was added to a graphite crucible. The graphite crucible has an outer diameter of 20 mm, an outer length of 40 mm, its volume is represented by an inner diameter of 10 mm and a length of 35 mm, and is accommodated in a ceramic airtight and thermally insulated container with a nozzle at one end of the container having an inner diameter of 1 mm and a length of 5 mm. Immediately before particle production, 4.6kW of high-frequency induction power was applied for about 20 minutes to stabilize particle production conditions such as temperature. Particle formation was started by applying a nitrogen pressure of about 300 Pa, resulting in silicon spheres having an average diameter of about 1 mm. In order to reduce the degree of reaction between silicon and graphite and the degree of combustion of graphite due to the presence of oxygen, a nitrogen pressure of about 100 Pa is maintained in the system where the flow rate becomes zero at the beginning...

example 2

[0215] About 1.5 ml of silicon material was added to a graphite crucible. The graphite crucible has an outer diameter of 20 mm, an outer length of 40 mm, its volume is represented by an inner diameter of 10 mm and a length of 30 mm, and is accommodated in a ceramic airtight and heat-insulated container with a nozzle of an inner diameter of 1 mm and a length of 10 mm at one end of the container. Immediately before particle production, 4.6kW of high-frequency induction power was applied for about 15 minutes to stabilize particle production conditions such as temperature. Particle formation was started by applying a nitrogen pressure of about 500 Pa, resulting in silicon spheres having an average diameter of about 1 mm. In order to reduce the degree of reaction between silicon and graphite and the degree of combustion of graphite due to the presence of oxygen, a nitrogen pressure of about 100 Pa is maintained in the system where the flow rate becomes zero at the beginning of appl...

example 3

[0217] About 1.2 ml of silicon material was added to a graphite crucible. The graphite crucible has an outer diameter of 20 mm, an outer length of 40 mm, its volume is represented by an inner diameter of 10 mm and a length of 25 mm, and is accommodated in a ceramic airtight and heat-insulated container with a nozzle of an inner diameter of 1 mm and a length of 10 mm at one end of the container. Immediately before particle production, a high-frequency induction power of 3.6kW was applied for about 20 minutes to stabilize particle production conditions such as temperature. Particle formation was started by applying a nitrogen pressure of about 300 Pa, resulting in silicon spheres having an average diameter of about 1 mm. In order to reduce the degree of reaction between silicon and graphite and the degree of combustion of graphite due to the presence of oxygen, a nitrogen pressure of about 100 Pa is maintained in the system where the flow rate becomes zero at the beginning of ap...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Description

technical field [0001] The present invention relates to a photoelectric device, and a mass production device suitable for producing a large number of spherical semiconductor particles suitable for manufacturing a photoelectric device and the like. [0002] In the disclosure described herein, the term "pin junction" should be understood to include a structure in which n-, i-, and p-type semiconductor layers are formed on an approximately spherical photoelectric conversion element, and thereby these semiconductor layers are formed in a The order is set outward from the inside of the approximately spherical photoelectric conversion element or set inward from the outside. Background technique [0003] A typical prior art provides a photoelectric device comprising a photoelectric conversion element made of a crystalline silicon semiconductor wafer. The optoelectronic devices of the prior art are costly due to the complicated crystal fabrication steps. In addition, the steps of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/268H01L31/0352H01L31/04H01L31/042H01L31/0745H01L31/18
CPCY02E10/52H01L31/042H01L31/0352H01L31/035281C30B29/06H01L31/02008H01L31/0512H01L31/0745H01L31/1804H01L31/0547H02S40/36C30B11/003C30B11/006C30B30/06Y02E10/547C30B29/66Y02P70/50
Inventor 浜川圭弘室园干男高仓秀行山口由岐夫山形顺安田英典
Owner CLEAN VENTURE 21
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap